Abstract: Apparatus for mounting a semiconductor device chip and making electrical connections thereto is disclosed. A semiconductor device chip has its backside connected to the surface of a substrate, and its upper surface includes a plurality of electrical pads across the entire surface thereof. A translator chip having a plurality of first electrical contacts disposed generally across the interior portion thereof are in electrical contact with the semiconductor device chip electrical pads, and a plurality of second electrical contacts disposed generally around the perimeter of the translator chip are electrically connected with the electrical terminals in the substrate to which the chip is attached. Heat may be removed from the semiconductor device chip through its backside via cooling channels in the substrate.

Abstract: A microelectronics apparatus and a method of fabricating customized connections between wiring planes superposed on a substrate is disclosed. A first wiring plane having multiple conductors is formed upon the substrate. An insulating layer is formed that overlies and electrically insulates the first wiring plane. A second wiring plane having multiple conductors is formed above the insulating layer by forming multiple conductors that are electrically connected to the first wiring plane with selected conductors of the first wiring plane being electrically connected to selected conductors of the second wiring plane. The connections may be modified by breaking selected ones of the electrical connections between the first and second wiring planes to customize the electrical interconnections.

Abstract: A microelectronics apparatus and a method of fabricating customized connections between wiring planes superposed on a substrate is disclosed. A first wiring plane having multiple conductors is formed upon the substrate. An insulating layer is formed that overlies and electrically insulates the first wiring plane. A second wiring plane having multiple conductors is formed above the insulating layer by forming multiple conductors that are electrically connected to the first wiring plane with selected conductors of the first wiring plane being electrically connected to selected conductors of the second wiring plane. The connections may be modified by breaking selected ones of the electrical connections between the first and second wiring planes to customize the electrical interconnections.

Abstract: A mirror array light valve is described comprising a transparent substrate, a plurality of post members arranged in a regular array on said substrate, and a plurality of deflectable square, rectangular, hexagonal or the like light-reflecting elements arranged in a regular array on said post members such that a post member is positioned under a corresponding corner of each element; methods for making the mirror array light valve are also described.

Abstract: A method for producing a rotary on-off switch in which a contactor plate is formed from sheet metal stock, integrally molded with a switch housing and thereafter blanked from the sheet metal stock. The switch housing has an integral set of circumferentially spaced abutments at regular intervals in an internal socket opening of the housing. A first switch operating member having a stem and a plurality of crowned teeth is internally mounted in the housing. A second switch operating member also has a set of crowned teeth disposed complementary to those on the first switch operating member, and also is disposed in the housing so that upon coaxial movement of the two operating members the second switch operating member will be caused to rotate abruptly after the second switch operating member has been displaced axially sufficiently to disengage the second switch operating member from the abutments in the housing.

Abstract: A method for producing a rotary on-off switch in which a contactor plate is formed from sheet metal stock, integrally molded with a switch housing and thereafter blanked from the sheet metal stock. The switch housing has an integral set of circumferentially spaced abutments at regular intervals in an internal socket opening of the housing. A first switch operating member having a stem and a plurality of crowned teeth is internally mounted in the housing. A second switch operating member also has a set of crowned teeth disposed complementary to those on the first switch operating member, and also is disposed in the housing so that upon coaxial movement of the two operating members the second switch operating member will be caused to rotate abruptly after the second switch operating member has been displaced axially sufficiently to disengage the second switch operating member from the abutments in the housing.

Abstract: A field effect transistor (FET) comprising a floating gate and a control gate in a stacked relationship with each other and being self-aligned with each other and self-aligned with respect to source and drain regions. The fabrication technique employed comprises delineating both the floating gate and control gate in the same lithographic masking step.

Abstract: A field effect transistor (FET) comprising a floating gate and a control gate in a stacked relationship with each other and being self-aligned with each other and self-aligned with respect to source and drain regions. The fabrication technique employed comprises delineating both the floating gate and control gate in the same lithographic masking step.

Abstract: A method, including a sequence of process steps, for fabricating insulated gate field effect transistors having very short effective channel lengths. In a first version of the method, the source and drain regions of the device are opened in one process step and self-alignment of the source and the drain to the gate is achieved in one masking step. The drain region is then masked and the source side of the channel is implanted to adjust the threshold voltage of the high threshold voltage channel region. In a second version of the method, the source region is opened and self-aligned with the gate prior to the opening of drain region. Implantation to adjust the threshold voltage of the high threshold voltage channel region takes place before the drain region is opened, and then the drain region is opened and self-aligned with the gate in a further masking step. In either version, the threshold voltage is adjustable and the channel length is controlled to be a small value.