Patents by Inventor Carlton Nigel Dodge

Carlton Nigel Dodge has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10370773
    Abstract: A method for manufacturing a plurality of synthetic single crystal diamonds, the method comprising: forming a plurality of seed pads, each seed pad comprising a plurality of single crystal diamond seeds anchored to, or embedded in, an inert holder; loading a carbon source, a metal catalyst, and the plurality of seed pads into a capsule; loading the capsule into a high pressure high temperature (HPHT) press; and subjecting the capsule to a HPHT growth cycle to grow single crystal diamond material on the plurality of single crystal diamond seeds, the HPHT growth cycle comprising: initiating HPHT growth of single crystal diamond material on the plurality of single crystal diamond seeds by increasing pressure and temperature; maintaining HPHT growth of single crystal diamond material on the plurality of single crystal diamond seeds via a pressure driven growth process by controlling and maintaining pressure and temperature; and terminating HPHT growth of single crystal diamond material on the plurality of single
    Type: Grant
    Filed: March 13, 2013
    Date of Patent: August 6, 2019
    Assignee: Element Six Technologies Limited
    Inventors: Dietrich Borse, Eugen Gura, Carlton Nigel Dodge, Raymond Anthony Spits
  • Patent number: 9738970
    Abstract: The present disclosure relates to substrates for use in microwave plasma reactors. Certain substrates include a cylindrical disc of a carbide forming refractory metal having a flat growth surface on which CVD diamond is to be grown and a flat supporting surface opposed to said growth surface. The cylindrical disc may have a diameter of 80 mm or more. The growth surface may have a flatness variation no more than 100 mm The supporting surface may have a flatness variation no more than 100 mm.
    Type: Grant
    Filed: September 11, 2014
    Date of Patent: August 22, 2017
    Assignee: Element Six Limited
    Inventors: Carlton Nigel Dodge, Paul Nicolas Inglis, Geoffrey Alan Scarsbrook, Timothy Peter Mollart, Charles Simon James Pickles, Steven Edward Coe, Joseph Michael Dodson, Alexander Lamb Cullen, John Robert Brandon, Christopher John Howard Wort
  • Patent number: 9039832
    Abstract: A high pressure high temperature (HPHT) method for synthesizing single crystal diamond, wherein a single crystal diamond seed having an aspect ratio of at least (1) and a growth surface substantially parallel to a {110} crystallographic plane is utilized is described. The growth is effected at a temperature in the range from 1280° C. to 1390° C.
    Type: Grant
    Filed: January 15, 2010
    Date of Patent: May 26, 2015
    Assignee: Element Six Technologies Limited
    Inventors: Raymond Anthony Spits, Carlton Nigel Dodge
  • Patent number: 9034296
    Abstract: The present invention relates to an HPHT method for synthesizing single crystal diamond, wherein a single crystal diamond seed having an aspect ratio of at least 1.5 is utilized. Single crystal diamond seeds having an aspect ratio of at least 1.5 and synthetic single crystal diamond which may be obtained by the method recited are also described. The growth surface is substantially aligned along a <100> or <110> direction in the plane of the growth surface.
    Type: Grant
    Filed: September 6, 2013
    Date of Patent: May 19, 2015
    Assignee: Element Six Technologies Limited
    Inventors: Carlton Nigel Dodge, Raymond Anthony Spits
  • Publication number: 20150061191
    Abstract: The present disclosure relates to substrates for use in microwave plasma reactors. Certain substrates include a cylindrical disc of a carbide forming refractory metal having a flat growth surface on which CVD diamond is to be grown and a flat supporting surface opposed to said growth surface. The cylindrical disc may have a diameter of 80 mm or more. The growth surface may have a flatness variation no more than 100 mm The supporting surface may have a flatness variation no more than 100 mm.
    Type: Application
    Filed: September 11, 2014
    Publication date: March 5, 2015
    Inventors: Carlton Nigel Dodge, Paul Nicolas Inglis, Geoffrey Alan Scarsbrook, Timothy Peter Mollart, Charles Simon James Pickles, Steven Edward Coe, Joseph Michael Dodson, Alexander Lamb Cullen, John Robert Brandon, Christopher John Howard Wort
  • Publication number: 20150027363
    Abstract: A method for manufacturing a plurality of synthetic single crystal diamonds, the method comprising: forming a plurality of seed pads, each seed pad comprising a plurality of single crystal diamond seeds anchored to, or embedded in, an inert holder; loading a carbon source, a metal catalyst, and the plurality of seed pads into a capsule; loading the capsule into a high pressure high temperature (HPHT) press; and subjecting the capsule to a HPHT growth cycle to grow single crystal diamond material on the plurality of single crystal diamond seeds, the HPHT growth cycle comprising: initiating HPHT growth of single crystal diamond material on the plurality of single crystal diamond seeds by increasing pressure and temperature; maintaining HPHT growth of single crystal diamond material on the plurality of single crystal diamond seeds via a pressure driven growth process by controlling and maintaining pressure and temperature; and terminating HPHT growth of single crystal diamond material on the plurality of single
    Type: Application
    Filed: March 13, 2013
    Publication date: January 29, 2015
    Inventors: Dietrich Borse, Eugen Gura, Carlton Nigel Dodge, Raymond Anthony Spits
  • Patent number: 8859058
    Abstract: A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapor deposition, the microwave plasma reactor comprising: a microwave generator configured to generate microwaves at a frequency f; a plasma chamber comprising a base, a top plate, and a side wall extending from said base to said top plate defining a resonance cavity for supporting a microwave resonance mode between the base and the top plate; a microwave coupling configuration for feeding microwaves from the microwave generator into the plasma chamber; a gas flow system for feeding process gases into the plasma chamber and removing them therefrom; a substrate holder disposed in the plasma chamber and comprising a supporting surface for supporting a substrate; and a substrate disposed on the supporting surface, the substrate having a growth surface on which the synthetic diamond material is to be deposited in use, wherein the substrate dimensions and location within the resonance cavity are selected to generate a localized a
    Type: Grant
    Filed: December 14, 2011
    Date of Patent: October 14, 2014
    Assignee: Element Six Limited
    Inventors: Carlton Nigel Dodge, Paul Nicolas Inglis, Geoffrey Alan Scarsbrook, Timothy Peter Mollart, Charles Simon James Pickles, Steven Edward Coe, Joseph Michael Dodson, Alexander Lamb Cullen, John Robert Brandon, Christopher John Howard Wort
  • Publication number: 20140234556
    Abstract: A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition, the microwave plasma reactor comprising: a microwave generator configured to generate microwaves at a frequency f; a plasma chamber comprising a base, a top plate, and a side wall extending from said base to said top plate defining a resonance cavity for supporting a microwave resonance mode between the base and the top plate; a microwave coupling configuration for feeding microwaves from the microwave generator into the plasma chamber; a gas flow system for feeding process gases into the plasma chamber and removing them therefrom; a substrate holder disposed in the plasma chamber and comprising a supporting surface for supporting a substrate; and a substrate disposed on the supporting surface, the substrate having a growth surface on which the synthetic diamond material is to be deposited in use, wherein the substrate dimensions and location within the resonance cavity are selected to generate a localized
    Type: Application
    Filed: December 14, 2011
    Publication date: August 21, 2014
    Applicant: ELEMENT SIX LIMITED
    Inventors: Carlton Nigel Dodge, Paul Nicolas Inglis, Geoffrey Alan Scarsbrook, Timothy Peter Mollart, Charles Simon James Pickles, Steven Edward Coe, Joseph Michael Dodson, Alexander Lamb Cullen, John Robert Brandon, Christopher John Howard Wort
  • Publication number: 20140020620
    Abstract: The present invention relates to an HPHT method for synthesizing single crystal diamond, wherein a single crystal diamond seed having an aspect ratio of at least 1.5 is utilised. Single crystal diamond seeds having an aspect ratio of at least 1.5 and synthetic single crystal diamond which may be obtained by the method recited are also described. The growth surface is substantially aligned along a <100> or <110> direction in the plane of the growth surface.
    Type: Application
    Filed: September 6, 2013
    Publication date: January 23, 2014
    Inventors: Carlton Nigel Dodge, Raymond Anthony Spits
  • Patent number: 8574535
    Abstract: The present invention relates to an HPHT method for synthesizing single crystal diamond, wherein a single crystal diamond seed having an aspect ratio of at least 1.5 is utilized. Single crystal diamond seeds having an aspect ratio of at least 1.5 and synthetic single crystal diamond which may be obtained by the method recited are also described. The growth surface is substantially aligned along a <100> or <110> direction in the plane of the growth surface.
    Type: Grant
    Filed: March 7, 2008
    Date of Patent: November 5, 2013
    Assignee: Element Six Limited
    Inventors: Carlton Nigel Dodge, Raymond Anthony Spits
  • Publication number: 20110271900
    Abstract: A high pressure high temperature (HPHT) method for synthesizing single crystal diamond, wherein a single crystal diamond seed having an aspect ratio of at least (1) and a growth surface substantially parallel to a {110} crystallographic plane is utilised is described. The growth is effected at a temperature in the range from 1280° C. to 1390° C.
    Type: Application
    Filed: January 15, 2010
    Publication date: November 10, 2011
    Inventors: Raymond Anthony Spits, Carlton Nigel Dodge
  • Publication number: 20100119790
    Abstract: The present invention relates to an HPHT method for synthesizing single crystal diamond, wherein a single crystal diamond seed having an aspect ratio of at least 1.5 is utilised. Single crystal diamond seeds having an aspect ratio of at least 1.5 and synthetic single crystal diamond which may be obtained by the method recited are also described. The growth surface is substantially aligned along a <100> or <110> direction in the plane of the growth surface.
    Type: Application
    Filed: March 7, 2008
    Publication date: May 13, 2010
    Inventors: Carlton Nigel Dodge, Raymond Anthony Spits