Abstract: In one embodiment, the present invention is a method of coating at least one wafer with silicon nitride. The first step in the method is assembling at least one electrode set, wherein each electrode set includes at least one dielectric barrier between a top electrode and a bottom electrode. The second step is flowing at least one purge gas and at least one reactant at least partially between the electrodes, of at least one electrode set, substantially at atmospheric pressure. The next step in the inventive method is placing a wafer between the electrodes of at least one electrode set, wherein the wafer is substantially encompassed by the flowing gas. The last step in this embodiment of the inventive method is supplying AC power to at least one electrode set thereby causing a dielectric barrier discharge.