Abstract: The memory device (for example, a DRAM) includes a matrix of memory cells arranged in a plurality of rows and columns (for example, organized in pairs), which include redundancy rows and columns for replacing defective rows and columns. Each one of a plurality of bit lines is connected to the cells of a corresponding column, and each one of a plurality of word lines is connected to the cells of a corresponding row. A bit line driver is used for biasing the bit lines and a word line driver is used for biasing the word lines. Each one of a plurality of selectors is arranged along a potential conduction path between the bit line driver and the word line driver through a set of corresponding word lines and bit lines. A selection driver is used for setting each selector to a first resistance (for example, closed) if the corresponding rows and columns are non-defective or to a second resistance higher than the first resistance (for example, open) if at least one of the corresponding rows and columns is defective.

Abstract: A voltage phase generator that generates a normal voltage phase, a negated normal voltage phase, a boosted voltage phase, and a negated boosted voltage phase. The voltage phase generator includes a first driver circuit that supplies the normal voltage phase to a first output node, and a second driver circuit that supplies the negated normal voltage phase to a second output node. The first and second driver circuits are driven by additional voltage phases that have a boosted voltage. In one preferred embodiment, each of the driver circuits includes a pull-up connected between a supply voltage and one of the output nodes, and a pull-down connected between ground and the one output node. Additionally, the present invention provides a voltage boosting circuit that includes a booster circuit and a voltage phase generator.

Abstract: A first current generator which generates a current that is based on the threshold difference of enhancement-type and native-type transistors therein. A second current generator which generates a current that is based on the thermal voltage. The currents generated by the first and second current generators are linearly combined to produce a highly temperature-stable current.

Abstract: A voltage boosting circuit for use in an integrated circuit having at least four driving voltage phases that include first and second voltage phases with amplitudes substantially equal to the supply voltage, and first and second boosted voltage phases. The voltage boosting circuit includes an input that receives the first or second voltage phase, an output that supplies the first or second boosted voltage phase, and a charge node that is coupled to the input. Additionally, a supply voltage precharge circuit precharges the charge node, and an additional transistor is connected between the supply voltage and the charge node. The additional transistor is driven by a voltage with a greater amplitude than the supply voltage so that the charge node is precharged up to the supply voltage and the first or second boosted voltage phase that is output by the voltage boosting circuit reaches an amplitude equal to substantially twice the supply voltage.