Abstract: A method for defining geometries in a semiconductor wafer supported on a plate electrode in a processing chamber includes forming a reusable refractory coated laminar mask. The reusable refractory coated laminar mask is formed by defining the geometries in a laminar mask substrate, forming apertures through the laminar mask substrate, and forming a layer of refractory material over at least one surface of the laminar mask substrate. The reusable refractory coated laminar mask is positioned over the semiconductor wafer. Treating of the semiconductor wafer is performed through the apertures of the reusable refractory coated laminar mask. The treating may be plasma etching or ion etching.

Abstract: A method for defining geometries in a semiconductor wafer supported on a plate electrode in a processing chamber includes forming a reusable refractory coated laminar mask. The reusable refractory coated laminar mask is formed by defining the geometries in a laminar mask substrate, forming apertures through the laminar mask substrate, and forming a layer of refractory material over at least one surface of the laminar mask substrate. The reusable refractory coated laminar mask is positioned over the semiconductor wafer. Treating of the semiconductor wafer is performed through the apertures of the reusable refractory coated laminar mask. The treating may be plasma etching or ion etching.

Abstract: Using an attenuated phase shifting mask (Att.PSM) with square-section etch window there is the advantage of permitting good resolution and simultaneously increasing the depth of focus and the exposure latitude (the range of energy), improving the lithographic process itself compared to the traditional masks, called binary. The Att.PSM masks introduce the problem of the side lobe effects which is solved with the present invention adopting a polygonal etch window with at least six sides, preferably with an octagonal shape.

Abstract: In a photolithographic process using a photolithographic mask having opaque mask areas and transparent mask areas, the opaque mask areas corresponding to a pattern to be transferred onto a semiconductor wafer to form on the wafer a pattern of active structures, a method for improving the performance of the photolithographic equipment and for increasing the lifetime of the optics including providing auxiliary opaque mask areas in areas of the mask not covered by active opaque mask areas, so as to reduce a transmission factor of the mask.

Abstract: A process for etching a dielectric layer, including the steps of forming, over the dielectric layer, a layer of polysilicon, forming over the layer of polysilicon a photoresist mask layer, etching the layer of polysilicon using the photoresist mask layer as an etching mask for selectively removing the layer of polysilicon, removing the photoresist mask layer from over the layer of polysilicon, etching the dielectric layer using the layer of polysilicon as a mask. Subsequently, the layer of polysilicon is converted into a layer of a transition metal silicide, and the layer of transition metal silicide is etched for selectively removing the latter from over the dielectric layer.