Abstract: A method of making a laser mirror in which a mirror substrate has at least a one micron size nodular defect includes depositing a planarization layer over the mirror substrate and the nodular defect, depositing a layer of silicon dioxide over the planarization layer, and etching away a portion of the layer of silicon dioxide. The method also includes thereafter, depositing a layer of hafnium dioxide over the layer of silicon dioxide and repeating the steps of depositing a layer of silicon dioxide, etching away a portion of the layer of silicon dioxide, and depositing a layer of hafnium dioxide until the nodular defect is reduced in size a predetermined amount.

Abstract: A method of making a laser mirror in which a mirror substrate has at least a one micron size nodular defect includes depositing a planarization layer over the mirror substrate and the nodular defect, depositing a layer of silicon dioxide over the planarization layer, and etching away a portion of the layer of silicon dioxide. The method also includes thereafter, depositing a layer of hafnium dioxide over the layer of silicon dioxide and repeating the steps of depositing a layer of silicon dioxide, etching away a portion of the layer of silicon dioxide, and depositing a layer of hafnium dioxide until the nodular defect is reduced in size a predetermined amount.

Abstract: Planarization of defects in laser mirror and other optical component manufacture is disclosed. The planarization is performed by first depositing a relatively thick planarization layer, then carrying out a sequential deposition and etch process. The technique takes advantage of the non-uniform material removal rate as a function of etchant incident angle, and effectively buries the inclusion in a thick film with a near planar top surface. The process enables faster, more reliable manufacture of a non-defective high fluence multilayer mirror particularly suitable for high energy laser applications.

Abstract: Planarization of defects in laser mirror and other optical component manufacture is disclosed. The planarization is performed by first depositing a relatively thick planarization layer, then carrying out a sequential deposition and etch process. The technique takes advantage of the non-uniform material removal rate as a function of etchant incident angle, and effectively buries the inclusion in a thick film with a near planar top surface. The process enables faster, more reliable manufacture of a non-defective high fluence multilayer mirror particularly suitable for high energy laser applications.

Abstract: Ablation of holes having diameters as small as 82 nm and having clean walls was obtained in a poly(methyl methacrylate) on a silicon substrate by focusing pulses from a Ne-like Ar, 46.9 nm wavelength, capillary-discharge laser using a freestanding Fresnel zone plate diffracting into third order is described. Spectroscopic analysis of light from the ablation has also been performed. These results demonstrate the use of focused coherent EUV/SXR light for the direct nanoscale patterning of materials.