Patents by Inventor Carol J. Heenan
Carol J. Heenan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 6960514Abstract: An improved pitcher-shaped active area for a field effect transistor that, for a given gate length, achieves an increase in transistor on-current, a decrease in transistor serial resistance, and a decrease in contact resistance. The pitcher-shaped active area structure includes at least two shallow trench insulator (STI) structures formed into a substrate that defines an active area structure, which includes a widened top portion with a larger width than a bottom portion. An improved fabrication method for forming the improved pitcher-shaped active area is also described that implements a step to form STI structure divots followed by a step to migrate substrate material into at least portions of the divots, thereby forming a widened top portion of the active area structure. The fabrication method of present invention forms the pitcher-shaped active area without the use of lithography, and therefore, is not limited by the smallest ground rules of lithography tooling.Type: GrantFiled: March 18, 2004Date of Patent: November 1, 2005Assignee: International Business Machines CorporationInventors: Jochen Beintner, Rama Divakaruni, Johnathan Faltermeier, Philip L. Flaitz, Oleg Gluschenkov, Carol J. Heenan, Rajarao Jammy, Byeong Kim, Mihel Seitz, Akira Sudo, Yoichi Takegawa
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Patent number: 6887797Abstract: An apparatus and method of forming an oxynitride insulating layer on a substrate performed by putting the substrate at a first temperature within the main chamber of a furnace, exposing the substrate to a nitrogen containing gas at a second temperature which is higher than the first temperature, and growing the oxynitride layer on the substrate within the main chamber in the presence of post-combusted gases. The higher temperature nitrogen containing gases are combusted in a chamber outside the main chamber. The higher temperature is in the range of 800 to 1200° C., and preferably 950° C. In a second embodiment, distributed N2O gas injectors within the main chamber deliver the nitrogen containing gas. The nitrogen containing gas is pre-heated outside the chamber. The nitrogen containing gas is then delivered to a gas manifold that splits the gas flow and directs the gas to a number of gas injectors, preferably two to four injectors within the main process tube.Type: GrantFiled: July 19, 2002Date of Patent: May 3, 2005Assignee: International Business Machines CorporationInventors: Douglas A. Buchanan, Evgeni P. Gousev, Carol J. Heenan, Wade J. Hodge, Steven M. Shank, Patrick R. Varekamp
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Publication number: 20040173858Abstract: An improved pitcher-shaped active area for a field effect transistor that, for a given gate length, achieves an increase in transistor on-current, a decrease in transistor serial resistance, and a decrease in contact resistance. The pitcher-shaped active area structure includes at least two shallow trench insulator (STI) structures formed into a substrate that defines an active area structure, which includes a widened top portion with a larger width than a bottom portion. An improved fabrication method for forming the improved pitcher-shaped active area is also described that implements a step to form STI structure divots followed by a step to migrate substrate material into at least portions of the divots, thereby forming a widened top portion of the active area structure. The fabrication method of present invention forms the pitcher-shaped active area without the use of lithography, and therefore, is not limited by the smallest ground rules of lithography tooling.Type: ApplicationFiled: March 18, 2004Publication date: September 9, 2004Inventors: Jochen Beintner, Rama Divakaruni, Johnathan Faltermeier, Philip L. Flaitz, Oleg Gluschenkov, Carol J. Heenan, Rajarao Jammy, Byeong Kim, Mihel Seitz, Akira Sudo, Yoichi Takegawa
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Patent number: 6746933Abstract: An improved pitcher-shaped active area for a field effect transistor that, for a given gate length, achieves an increase in transistor on-current, a decrease in transistor serial resistance, and a decrease in contact resistance. The pitcher-shaped active area structure includes at least two shallow trench insulator (STI) structures formed into a substrate that defines an active area structure, which includes a widened top portion with a larger width than a bottom portion. An improved fabrication method for forming the improved pitcher-shaped active area is also described that implements a step to form STI structure divots followed by a step to migrate substrate material into at least portions of the divots, thereby forming a widened top portion of the active area structure. The fabrication method of present invention forms the pitcher-shaped active area without the use of lithography, and therefore, is not limited by the smallest ground rules of lithography tooling.Type: GrantFiled: October 26, 2001Date of Patent: June 8, 2004Assignee: International Business Machines CorporationInventors: Jochen Beintner, Rama Divakaruni, Johnathan Faltermeier, Philip L. Flaitz, Oleg Gluschenkov, Carol J. Heenan, Rajarao Jammy, Byeong Kim, Mihel Seitz, Akira Sudo, Yoichi Takegawa
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Publication number: 20020182893Abstract: Disclosed is a method to convert a stable silicon nitride film into a stable silicon oxide film with a low content of residual nitrogen in the resulting silicon oxide film. This is an unexpected and unique property of the in situ steam generation process since both silicon nitride and silicon oxide materials are chemically very stable compounds. Application of the claimed method to the art of microelectronic device fabrication, such as fabrication of on-chip dielectric capacitors and metal insulator semiconductor field effect transistors, is also disclosed.Type: ApplicationFiled: June 5, 2001Publication date: December 5, 2002Applicant: International Business Machines CorporationInventors: Arne W. Ballantine, Johnathan E. Faltermeier, Philip L. Flaitz, Jeffrey D. Gilbert, Oleg Gluschenkov, Carol J. Heenan, Rajarao Jammy, Ryota Katsumada
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Publication number: 20020182888Abstract: An apparatus and method of forming an oxynitride insulating layer on a substrate performed by putting the substrate at a first temperature within the main chamber of a furnace, exposing the substrate to a nitrogen containing gas at a second temperature which is higher than the first temperature, and growing the oxynitride layer on the substrate within the main chamber in the presence of post-combusted gases. The higher temperature nitrogen containing gases are combusted in a chamber outside the main chamber. The higher temperature is in the range of 800 to 1200° C., and preferably 950° C. In a second embodiment, distributed N2O gas injectors within the main chamber deliver the nitrogen containing gas. The nitrogen containing gas is pre-heated outside the chamber. The nitrogen containing gas is then delivered to a gas manifold that splits the gas flow and directs the gas to a number of gas injectors, preferably two to four injectors within the main process tube.Type: ApplicationFiled: July 19, 2002Publication date: December 5, 2002Applicant: International Business Machines CorporationInventors: Douglas A. Buchanan, Evgeni P. Gousev, Carol J. Heenan, Wade J. Hodge, Steven M. Shank, Patrick R. Varekamp
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Publication number: 20020127872Abstract: An apparatus and method of forming an oxynitride insulating layer on a substrate performed by putting the substrate at a first temperature within the main chamber of a furnace, exposing the substrate to a nitrogen containing gas at a second temperature which is higher than the first temperature, and growing the oxynitride layer on the substrate within the main chamber in the presence of post-combusted gases. The higher temperature nitrogen containing gases are combusted in a chamber outside the main chamber. The higher temperature is in the range of 800 to 1200° C., and preferably 950° C. In a second embodiment, distributed N2O gas injectors within the main chamber deliver the nitrogen containing gas. The nitrogen containing gas is pre-heated outside the chamber. The nitrogen containing gas is then delivered to a gas manifold that splits the gas flow and directs the gas to a number of gas injectors, preferably two to four injectors within the main process tube.Type: ApplicationFiled: June 22, 2001Publication date: September 12, 2002Applicant: International Business Machines CorporationInventors: Douglas A. Buchanan, Evgeni P. Gousev, Carol J. Heenan, Wade J. Hodge, Steven M. Shank, Patrick R. Varekamp
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Patent number: 6436196Abstract: An apparatus and method of forming an oxynitride insulating layer on a substrate performed by putting the substrate at a first temperature within the main chamber of a furnace, exposing the substrate to a nitrogen containing gas at a second temperature which is higher than the first temperature, and growing the oxynitride layer on the substrate within the main chamber in the presence of post-combusted gases. The higher temperature nitrogen containing gases are combusted in a chamber outside the main chamber. The higher temperature is in the range of 800 to 1200° C., and preferably 950° C. In a second embodiment, distributed N2O gas injectors within the main chamber deliver the nitrogen containing gas. The nitrogen containing gas is pre-heated outside the chamber. The nitrogen containing gas is then delivered to a gas manifold that splits the gas flow and directs the gas to a number of gas injectors, preferably two to four injectors within the main process tube.Type: GrantFiled: June 22, 2001Date of Patent: August 20, 2002Assignee: International Business Machines CorporationInventors: Douglas A. Buchanan, Evgeni P. Gousev, Carol J. Heenan, Wade J. Hodge, Steven M. Shank, Patrick R. Varekamp
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Patent number: 6346487Abstract: An apparatus and method of forming an oxynitride insulating layer on a substrate performed by putting the substrate at a first temperature within the main chamber of a furnace, exposing the substrate to a nitrogen containing gas at a second temperature which is higher than the first temperature, and growing the oxynitride layer on the substrate within the main chamber in the presence of post-combusted gases. The higher temperature nitrogen containing gases are combusted in a chamber outside the main chamber. The higher temperature is in the range of 800 to 1200° C., and preferably 950° C. In a second embodiment, distributed N2O gas injectors within the main chamber deliver the nitrogen containing gas. The nitrogen containing gas is pre-heated outside the chamber. The nitrogen containing gas is then delivered to a gas manifold that splits the gas flow and directs the gas to a number of gas injectors, preferably two to four injectors within the main process tube.Type: GrantFiled: March 10, 2001Date of Patent: February 12, 2002Assignee: International Business Machines CorporationInventors: Douglas A. Buchanan, Evgeni P. Gousev, Carol J. Heenan, Wade J. Hodge, Steven M. Shank, Patrick R. Varekamp