Patents by Inventor Carol S. Talley

Carol S. Talley has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of making photodetector with P layer covered by N layer
    Patent number: 5004698
    Abstract: Photodetectors that produce detectivities close to the theoretical maximum detectivity include an electrically insulating substrate carrying a body of semiconductive material that includes a region of first conductivity type and a region of second conductivity type where the first region overlies and substantially covers the top and sides of the region of second conductivity type and where the junction between the first and second regions creates a depletion layer that separates minority carriers in the region of second conductivity type from majority carriers in the region of first conductivity type. These photodetectors produce high detectivities where radiation incident on the detectors has wavelengths in the range of about 1 to about 25 microns or more, particularly under low background conditions.
    Type: Grant
    Filed: January 16, 1990
    Date of Patent: April 2, 1991
    Assignee: Santa Barbara Research Center
    Inventors: Paul R. Norton, Michael Moroz, Carol S. Talley
  • Photodetector with player covered by N layer
    Patent number: 4914495
    Abstract: Photodetectors that produce detectivities close to the theoretical maximum detectivity include an electrically insulating substrate carrying a body of semiconductive material that includes a region of first conductivity type and a region of second conductivity type where the first region overlies and substantially covers the top and sides of the region of second conductivity type and where the junction between the first and second regions creates a depletion layer that separates minority carriers in the region of second conductivity type from majority carriers in the region of first conductivity type. These photodetectors produce high detectivities where radiation incident on the detectors has wavelengths in the range of about 1 to about 25 microns or more, particularly under low background conditions.
    Type: Grant
    Filed: December 5, 1985
    Date of Patent: April 3, 1990
    Assignee: Santa Barbara Research Center
    Inventors: Paul R. Norton, Michael Moroz, Carol S. Talley