Patents by Inventor Carol Yoshiko Inouye

Carol Yoshiko Inouye has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6379570
    Abstract: A method is provided for making a well-defined, highly-predictable chevron type MR sensor for a read head. A first material is selected for a first gap layer. A selected second material is deposited on the first gap layer followed by a resist frame that has elongated openings exposing elongated top portions of the first gap layer that extend at an acute angle to a head surface of the read head. A selected reactive ion etch (RIE) is employed to etch away the exposed portions of the second material layer down to the first material of the first gap layer. The material of the second material layer is chosen to be etched by the RIE while the material of the first gap layer is chosen not to be etched by the RIE. An example is Al2O3 for the first gap layer, SiO2 for the second material layer and a RIE that is fluorine based. The resist frame is removed leaving elongated strips of the second material layer extending at the aforementioned angle to the head surface.
    Type: Grant
    Filed: November 29, 1999
    Date of Patent: April 30, 2002
    Assignee: International Business Machines Corporation
    Inventors: Joseph John Fatula, Jr., Richard Hsiao, Carol Yoshiko Inouye, Li-Chung Lee
  • Patent number: 6118623
    Abstract: A method is provided for making a well-defined, highly-predictable chevron type MR sensor for a read head. A first material is selected for a first gap layer. A selected second material is deposited on the first gap layer followed by a resist frame that has elongated openings exposing elongated top portions of the first gap layer that extend at an acute angle to a head surface of the read head. A selected reactive ion etch (RIE) is employed to etch away the exposed portions of the second material layer down to the first material of the first gap layer. The material of the second material layer is chosen to be etched by the RIE while the material of the first gap layer is chosen not to be etched by the RIE. An example is Al.sub.2 O.sub.3 for the first gap layer, SiO.sub.2 for the second material layer and a RIE that is fluorine based. The resist frame is removed leaving elongated strips of the second material layer extending at the aforementioned angle to the head surface.
    Type: Grant
    Filed: September 5, 1997
    Date of Patent: September 12, 2000
    Assignee: International Business Machines Corporation
    Inventors: Joseph John Fatula, Jr., Richard Hsiao, Carol Yoshiko Inouye, Li-Chung Lee