Abstract: A method for qualifying a mask for a lithography system, the mask having measurement points for detecting critical dimensions of the mask, comprising: first detection of critical dimensions of the mask at the measurement points, the first detection taking place sequentially and the duration of the first detection defining a measurement time period; determining reference measurement points from the measurement points, the number of reference measurement points being less than the number of measurement points; second detection of the at least one critical dimension of the mask at the reference measurement points; determining a deviation between the first and the second detected critical dimension at each of the reference measurement points; and applying a determined temporal profile of the correction factor to the at least one critical dimension to obtain a corrected critical dimension of the mask, and also a corresponding device for qualifying a mask for a lithography system.

Abstract: The present invention relates to a method for transforming measurement data of a photolithographic mask for the extreme ultraviolet (EUV) wavelength range from first surroundings into second surroundings. The method includes the steps of: (a) determining the measurement data for the photolithographic mask in the first surroundings, wherein the measurement data are influenced by the effects of internal stresses on the photolithographic mask; (b) ascertaining at least one change in the measurement data during the transition from the first surroundings into the second surroundings, in which change the effects of the internal stresses on the photolithographic mask are at least partly compensated; and (c) correcting the measurement data determined in step (a) with the at least one change in the measurement data ascertained in step (b).

Abstract: The present application relates to a device for determining placements of pattern elements of a reflective photolithographic mask in the operating environment thereof, wherein the device comprises: (a) at least one first means configured for determining surface unevenness data of a rear side of the reflective photolithographic mask and/or surface unevenness data of a mount of the reflective photolithographic mask in a measurement environment that does not correspond to the operating environment; (b) at least one second means configured for determining placement data of the pattern elements in the measurement environment; and (c) at least one computing unit configured for calculating the placements of the pattern elements of the reflective photolithographic mask in the operating environment from the determined surface unevenness data of the rear side and/or of the mount and the determined placement data.

Abstract: The present invention relates to a method for calibrating a measuring microscope which may be used to measure masks, in which a calibration mask is utilized in a self-calibration algorithm in order to ascertain error correction data of the measuring microscope, wherein, in the self-calibration algorithm, the calibration mask is imaged and measured in various positions in the measuring microscope in order to ascertain one or more portions of the error correction data, wherein the surface profile of the calibration mask is ascertained and utilized when determining the error correction. Moreover, the invention relates to a measuring microscope and a method for operating same.

Abstract: The invention relates to a method for capturing and compensating the influence of ambient conditions on an imaging scale (S) in a measuring microscope. Here, a modification of the optical properties in the measuring microscope that is caused by a change in the ambient conditions is measured by use of a reference measurement system, in particular an etalon, and, at the same time, an image of a reference structure with at least one reference length (L0) that is situated on a calibration mask is produced by use of a detector of the measuring microscope and a change (?L) of the reference length (L0) that is caused by the change in the ambient conditions is determined in the image of the reference structure. Subsequently, a correlation is established between the modification of the optical properties of the reference measurement system and the length change (?L) in the image, produced in the detector, of the reference structure of the calibration mask.

Abstract: The present invention relates to a method for transforming measurement data of a photolithographic mask for the extreme ultraviolet (EUV) wavelength range from first surroundings into second surroundings. The method includes the steps of: (a) determining the measurement data for the photolithographic mask in the first surroundings, wherein the measurement data are influenced by the effects of internal stresses on the photolithographic mask; (b) ascertaining at least one change in the measurement data during the transition from the first surroundings into the second surroundings, in which change the effects of the internal stresses on the photolithographic mask are at least partly compensated; and (c) correcting the measurement data determined in step (a) with the at least one change in the measurement data ascertained in step (b).

Abstract: The invention relates to a method for capturing and compensating the influence of ambient conditions on an imaging scale (S) in a measuring microscope. Here, a modification of the optical properties in the measuring microscope that is caused by a change in the ambient conditions is measured by use of a reference measurement system, in particular an etalon, and, at the same time, an image of a reference structure with at least one reference length (L0) that is situated on a calibration mask is produced by use of a detector of the measuring microscope and a change (?L) of the reference length (L0) that is caused by the change in the ambient conditions is determined in the image of the reference structure. Subsequently, a correlation is established between the modification of the optical properties of the reference measurement system and the length change (?L) in the image, produced in the detector, of the reference structure of the calibration mask.

Abstract: The present invention relates to a method for calibrating a measuring microscope which may be used to measure masks, in which a calibration mask is utilized in a self-calibration algorithm in order to ascertain error correction data of the measuring microscope, wherein, in the self-calibration algorithm, the calibration mask is imaged and measured in various positions in the measuring microscope in order to ascertain one or more portions of the error correction data, wherein the surface profile of the calibration mask is ascertained and utilized when determining the error correction. Moreover, the invention relates to a measuring microscope and a method for operating same.

Abstract: A method is provided for calibrating a position-measuring system which includes the following steps: a) multiple measurements of positions of a structure of a sample held by a sample stage at different pressures of the gaseous medium in which the sample stage is arranged, b) ascertaining the pressure dependence when determining actual positions by use of an evaluation unit, c) establishing a calibration rule based on the ascertained pressure dependence, and d) applying the calibration rule when determining the actual positions.

Abstract: A method for measuring a substrate in the form of a lithography mask or a mask blank for producing a lithography mask comprises the alignment of a substrate coordinate system (SKS), predetermined by a first marker structure, relative to a position measurement system, a measurement of actual position data (IST) of a second marker structure with predetermined intended position data (POS) in the substrate coordinate system (SKS), and an establishment of a transformation (T) of the substrate coordinate system (SKS) into a transformed substrate coordinate system (tSKS), wherein the transformation (T) is established in such a way that deviations between the actual position data (IST) and the intended position data (POS) of the second marker structure are reduced.

Abstract: A method for measuring a substrate in the form of a lithography mask or a mask blank for producing a lithography mask comprises the alignment of a substrate coordinate system (SKS), predetermined by a first marker structure, relative to a position measurement system, a measurement of actual position data (IST) of a second marker structure with predetermined intended position data (POS) in the substrate coordinate system (SKS), and an establishment of a transformation (T) of the substrate coordinate system (SKS) into a transformed substrate coordinate system (tSKS), wherein the transformation (T) is established in such a way that deviations between the actual position data (IST) and the intended position data (POS) of the second marker structure are reduced.

Abstract: A method is provided for calibrating a position-measuring system which includes the following steps: a) multiple measurements of a structure of a sample held by a sample stage at different pressures of the gaseous medium, in which the sample stage is arranged, b) ascertaining the pressure dependence when determining the position by use of an evaluation unit, c) establishing a calibration rule based on the ascertained pressure dependence, and d) applying the calibration rule when determining the position.

Abstract: The invention discloses a substrate holder (8) that is configured to receive a substrate (20) and can be utilized to determine the thickness deviation of a substrate from the standard thickness of a specific substrate type. The substrate holder (8) comprises a one-piece frame having a flat upper surface (42). An opening (30) that defines a peripheral rim (32) is provided in the substrate holder (8). Receiving elements (34) on which spheres are provided are shaped onto the peripheral rim (32) of the opening (30). A substrate (20) placed into the substrate holder (8) thus comes to rest on the upper surfaces of the spheres. The support elements (34) are arranged on the peripheral rim of the opening (30) in such a way that they lie at the vertices of an equilateral triangle.

Abstract: The invention discloses a substrate holder (8) that is configured to receive a substrate (20) and can be utilized to determine the thickness deviation of a substrate from the standard thickness of a specific substrate type. The substrate holder (8) comprises a one-piece frame having a flat upper surface (42). An opening (30) that defines a peripheral rim (32) is provided in the substrate holder (8). Receiving elements (34) on which spheres are provided are shaped onto the peripheral rim (32) of the opening (30). A substrate (20) placed into the substrate holder (8) thus comes to rest on the upper surfaces of the spheres. The support elements (34) are arranged on the peripheral rim of the opening (30) in such a way that they lie at the vertices of an equilateral triangle.

Abstract: The invention discloses a substrate holder (8) that is configured to receive a substrate (20) and can be utilized to determine the thickness deviation of a substrate from the standard thickness of a specific substrate type. The substrate holder (8) comprises a one-piece frame having a flat upper surface (42). An opening (30) that defines a peripheral rim (32) is provided in the substrate holder (8). Receiving elements (34) on which spheres are provided are shaped onto the peripheral rim (32) of the opening (30). A substrate (20) placed into the substrate holder (8) thus comes to rest on the upper surfaces of the spheres. The support elements (34) are arranged on the peripheral rim of the opening (30) in such a way that they lie at the vertices of an equilateral triangle.

Abstract: A coordinate measuring stage includes a stationary base part having a linear X guidance element, a center part slidable along the linear X guidance element, and an X-Y-positionable stage body for reception of a substrate, the X-Y positionable stage body being movable slidingly alone the Y guidance element. The center part is arranged in freely suspended fashion over the base part and supported at one end on the Y guidance element and with at another end on another support element. The Y guidance element, the other support element, and the stake body are supported, slidably and independently of one another, on the surface of the base part.

Abstract: A method for detecting images of an object includes: illuminating the object with a light source and imaging the object onto a detector using an imaging system so as to provide a detected image. A reference image is generated taking into account at least one property of the imaging system. The detected image is compared to the reference image. Upon a definable deviation between the detected image and the reference image, the reference image is varied so as to provide a varied reference image that at least largely corresponds to the detected image so as to enable conclusions to be drawn regarding the object.

Abstract: A coordinate measuring stage (1) with interferometric position determination, and a coordinate measuring instrument having said coordinate measuring stage (1), are described. The coordinate measuring stage (1) comprises the following elements arranged one above another: a stationary base part (2) having a linear X guidance element (3); a center part (4), movable slidingly along a linear X guidance element (3); and above that, an X-Y-positionable stage body (5), for reception of a substrate, which is movable slidingly along a Y guidance element (6). The center part (4) is arranged in freely suspended fashion over the base part (2), being supported with its one end on the Y guidance element (6) and with its other end on an additionally arranged support element (13). The base part (2), the center part (4), and the stage body (5) each comprise an internally located opening (18) for a transmitted-light region.

Abstract: An apparatus and method for loading substrates of various sizes into a substrate holder. The apparatus for this purpose comprises a base plate with peripheral rim and at least three support means arranged on the base plate, each of which has configured on it different support surfaces for the various substrates. The support surfaces are arranged in stepped fashion on the support means. In addition, receiving elements for the substrate holder are arranged on the base plate in such a way that the substrate holder that is set in place surrounds the support means and is aligned and oriented in terms of its position. At least one sensor element is housed in at least one of the support surfaces of a support means for one substrate size, so as thereby to detect the size of the substrate.

Abstract: A device and method for delivering various substrates into a high-precision measuring instrument. The device comprises a magazine in which are configured several compartments in which substrate holders for different substrates can be deposited. Also provided is a loading station in which the substrate holders can be loaded with the substrate that matches the substrate holder. An automatic transfer device removes substrate holders from the magazine and introduces them into the loading station, or removes the substrate holders together with the introduced substrate from the loading station. The automatic transport device is configured as a robot arm at whose front end sits a fork.