Abstract: A transparent substrate, in particular made of glass, provided with a stack of thin layers acting on solar radiation, includes at least one functional layer, this functional layer being combined with at least one barrier underlayer, wherein this barrier underlayer is a layer of silicon dioxide having a thickness of between 15 and 25 nm.

Abstract: A decorative laminated glass includes a first glass sheet, a second glass sheet, and a colored lamination interlayer between the first glass sheet and the second glass sheet. A coating is positioned between the first glass sheet and the lamination interlayer, and in direct contact with the first glass sheet. The coating is formed by the series of the following layers, starting from the surface of the first glass sheet: optionally, a first stack of dielectric layers; a layer based on titanium oxide having a thickness of from 5 to 70 nm; and optionally, a second stack of dielectric layers.

Abstract: A transparent substrate, in particular made of glass, provided with a stack of thin layers acting on solar radiation, includes at least one functional layer, this functional layer being combined with at least one barrier underlayer, wherein this barrier underlayer is a layer of silicon dioxide having a thickness of between 15 and 25 nm.

Abstract: A decorative laminated glass includes a first glass sheet, a second glass sheet, and a colored lamination interlayer between the first glass sheet and the second glass sheet. A coating is positioned between the first glass sheet and the lamination interlayer, and in direct contact with the first glass sheet. The coating is formed by the series of the following layers, starting from the surface of the first glass sheet: optionally, a first stack of dielectric layers; a layer based on titanium oxide having a thickness of from 5 to 70 nm; and optionally, a second stack of dielectric layers.

Abstract: A method for detaching a self-supporting layer of silicon of crystalline orientation <100>, particularly with the aim of applications in the field of photovoltaics, wherein the method includes the steps of: a) Implanting ionic species in a substrate made of silicon having a crystalline orientation <100> so as to create an embrittlement plane in the substrate, delimiting on both sides a self-supporting layer and a negative of the substrate, and b) Applying a heat treatment to the substrate implanted at step a) with a temperature ramp greater than 30° C./s so as to detach the self-supporting layer of silicon.

Abstract: A method for detaching a self-supporting layer of silicon of crystalline orientation <100>, particularly with the aim of applications in the field of photovoltaics, wherein the method includes the steps of: a) Implanting ionic species in a substrate made of silicon having a crystalline orientation <100> so as to create an embrittlement plane in the substrate, delimiting on both sides a self-supporting layer and a negative of the substrate, and b) Applying a heat treatment to the substrate implanted at step a) with a temperature ramp greater than 30° C./s so as to detach the self-supporting layer of silicon.