Patents by Inventor Carolin Tolksdorf
Carolin Tolksdorf has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10074723Abstract: A field plate trench FET includes a substrate, a gate buried at least partly within the substrate, and a field plate disposed below the gate, both the gate and the field plate being disposed within a trench in the substrate and being surrounded by an insulator. A p-doped domain is disposed within the substrate below the trench. Also described is a semiconductor component having a substrate and a plurality of field plate trench FETs disposed within the substrate.Type: GrantFiled: May 13, 2014Date of Patent: September 11, 2018Assignee: ROBERT BOSCH GMBHInventors: Carolin Tolksdorf, Ingo Martini, Frank Lipski, Timm Hoehr
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Publication number: 20180240879Abstract: A field plate trench FET includes a substrate, a gate buried at least partly within the substrate, and a field plate disposed below the gate, both the gate and the field plate being disposed within a trench in the substrate and being surrounded by an insulator. A p-doped domain is disposed within the substrate below the trench. Also described is a semiconductor component having a substrate and a plurality of field plate trench FETs disposed within the substrate.Type: ApplicationFiled: May 13, 2014Publication date: August 23, 2018Inventors: Carolin Tolksdorf, Ingo Martini, Frank Lipski, Timm HOEHR
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Patent number: 9711621Abstract: A trench transistor having a semiconductor body includes a source region, a body region, a drain region electrically connected to a drain contact, and a gate trench including a gate electrode which is isolated from the semiconductor body. The gate electrode is configured to control current flow between the source region and the drain region along at least a first side wall of the gate trench. The trench transistor further includes a doped semiconductor region having dopants introduced into the semiconductor body through an unmasked part of the walls of a trench.Type: GrantFiled: July 30, 2014Date of Patent: July 18, 2017Assignee: Infineon Technologies AGInventors: Franz Hirler, Uwe Wahl, Thorsten Meyer, Michael Rüb, Armin Willmeroth, Markus Schmitt, Carolin Tolksdorf, Carsten Schaeffer
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Patent number: 9660550Abstract: A generator device for the voltage supply of a motor vehicle is equipped with at least one rectifying element for rectifying an alternating voltage provided by a generator. The rectifying element has an n-channel MOS field-effect transistor in which the gate, the body area, and the source area are electrically fixedly connected to one another and in which the drain area is used as a cathode.Type: GrantFiled: October 20, 2011Date of Patent: May 23, 2017Assignees: Robert Bosch GmbH, Infineon Technologies AGInventors: Richard Spitz, Alfred Goerlach, Carolin Tolksdorf, Dirk Ahlers, Dietrich Bonart
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Publication number: 20140332885Abstract: A lateral trench transistor has a semiconductor body having a source region, a source contact, a body region, a drain region, and a gate trench, in which a gate electrode which is isolated from the semiconductor body is embedded. A heavily doped semiconductor region is provided within the body region or adjacent to it, and is electrically connected to the source contact, and whose dopant type corresponds to that of the body region.Type: ApplicationFiled: July 30, 2014Publication date: November 13, 2014Inventors: Franz Hirler, Uwe Wahl, Thorsten Meyer, Michael Rüb, Armin Willmeroth, Markus Schmitt, Carolin Tolksdorf, Carsten Schaeffer
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Patent number: 8829584Abstract: A semiconductor device with a dynamic gate drain capacitance. One embodiment provides a semiconductor device. The device includes a semiconductor substrate, a field effect transistor structure including a source region, a first body region, a drain region, a gate electrode structure and a gate insulating layer. The gate insulating layer is arranged between the gate electrode structure and the body region. The gate electrode structure and the drain region partially form a capacitor structure including a gate-drain capacitance configured to dynamically change with varying reverse voltages applied between the source and drain regions. The gate-drain capacitance includes at least one local maximum at a given threshold or a plateau-like course at given reverse voltage.Type: GrantFiled: September 13, 2012Date of Patent: September 9, 2014Assignee: Infineon Technologies Austria AGInventors: Anton Mauder, Hans-Joachim Schulze, Carolin Tolksdorf, Winfried Kaindl, Armin Willmeroth
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Patent number: 8815686Abstract: A method for production of doped semiconductor regions in a semiconductor body of a lateral trench transistor includes forming a trench in the semiconductor body and introducing dopants into at least one area of the semiconductor body that is adjacent to the trench, by carrying out a process in which dopants enter the at least one area through inner walls of the trench.Type: GrantFiled: March 14, 2013Date of Patent: August 26, 2014Assignee: Infineon Technologies AGInventors: Franz Hirler, Uwe Wahl, Thorsten Meyer, Michael Rüb, Armin Willmeroth, Markus Schmitt, Carolin Tolksdorf, Carsten Schaeffer
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Publication number: 20130329476Abstract: A generator device for the voltage supply of a motor vehicle is equipped with at least one rectifying element for rectifying an alternating voltage provided by a generator. The rectifying element has an n-channel MOS field-effect transistor in which the gate, the body area, and the source area are electrically fixedly connected to one another and in which the drain area is used as a cathode.Type: ApplicationFiled: October 20, 2011Publication date: December 12, 2013Inventors: Richard Spitz, Alfred Goerlach, Carolin Tolksdorf
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Patent number: 8431988Abstract: A lateral trench transistor has a semiconductor body having a source region, a source contact, a body region, a drain region, and a gate trench, in which a gate electrode which is isolated from the semiconductor body is embedded. A heavily doped semiconductor region is provided within the body region or adjacent to it, and is electrically connected to the source contact, and whose dopant type corresponds to that of the body region.Type: GrantFiled: October 28, 2005Date of Patent: April 30, 2013Assignee: Infineon Technologies AGInventors: Franz Hirler, Uwe Wahl, Thorsten Meyer, Michael Rüb, Armin Willmeroth, Markus Schmitt, Carolin Tolksdorf, Carsten Schäffer
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Publication number: 20130009227Abstract: A semiconductor device with a dynamic gate drain capacitance. One embodiment provides a semiconductor device. The device includes a semiconductor substrate, a field effect transistor structure including a source region, a first body region, a drain region, a gate electrode structure and a gate insulating layer. The gate insulating layer is arranged between the gate electrode structure and the body region. The gate electrode structure and the drain region partially form a capacitor structure including a gate-drain capacitance configured to dynamically change with varying reverse voltages applied between the source and drain regions. The gate-drain capacitance includes at least one local maximum at a given threshold or a plateau-like course at given reverse voltage.Type: ApplicationFiled: September 13, 2012Publication date: January 10, 2013Applicant: INFINEON TECHNOLOGIES AUSTRIA AGInventors: Anton Mauder, Hans-Joachim Schulze, Carolin Tolksdorf, Winfried Kaindl, Armin Willmeroth
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Patent number: 8324686Abstract: A semiconductor device and method for manufacturing. One embodiment provides a semiconductor device including an active cell region and a gate pad region. A conductive gate layer is arranged in the active cell region and a conductive resistor layer is arranged in the gate pad region. The resistor layer includes a resistor region which includes a grid-like pattern of openings formed in the resistor layer. A gate pad metallization is arranged at least partially above the resistor layer and in electrical contact with the resistor layer. An electrical connection is formed between the gate layer and the gate pad metallization, wherein the electrical connection includes the resistor region.Type: GrantFiled: January 16, 2009Date of Patent: December 4, 2012Assignee: Infineon Technologies Austria AGInventors: Armin Willmeroth, Carolin Tolksdorf
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Patent number: 8294206Abstract: An integrated circuit device includes a semiconductor body fitted with a first electrode and a second electrode on opposite surfaces. A control electrode on an insulating layer controls channel regions of body zones for a current flow between the two electrodes. A drift section adjoining the channel regions comprises drift zones and charge compensation zones. A part of the charge compensation zones includes conductively connected charge compensation zones electrically connected to the first electrode. Another part includes nearly-floating charge compensation zones, so that an increased control electrode surface has a monolithically integrated additional capacitance CZGD in a cell region of the semiconductor device.Type: GrantFiled: June 15, 2011Date of Patent: October 23, 2012Assignee: Infineon Technologies Austria AGInventors: Armin Willmeroth, Winfried Kaindl, Carolin Tolksdorf, Michael Rueb
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Patent number: 8273622Abstract: A semiconductor device with a dynamic gate drain capacitance. One embodiment provides a semiconductor device. The device includes a semiconductor substrate, a field effect transistor structure including a source region, a first body region, a drain region, a gate electrode structure and a gate insulating layer. The gate insulating layer is arranged between the gate electrode structure and the body region. The gate electrode structure and the drain region partially form a capacitor structure including a gate-drain capacitance configured to dynamically change with varying reverse voltages applied between the source and drain regions. The gate-drain capacitance includes at least one local maximum at a given threshold or a plateau-like course at given reverse voltage.Type: GrantFiled: June 15, 2011Date of Patent: September 25, 2012Assignee: Infineon Technologies Austria AGInventors: Anton Mauder, Hans-Joachim Schulze, Carolin Tolksdorf, Winfried Kaindl, Armin Willmeroth
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Publication number: 20110241104Abstract: An integrated circuit device includes a semiconductor body fitted with a first electrode and a second electrode on opposite surfaces. A control electrode on an insulating layer controls channel regions of body zones for a current flow between the two electrodes. A drift section adjoining the channel regions comprises drift zones and charge compensation zones. A part of the charge compensation zones includes conductively connected charge compensation zones electrically connected to the first electrode. Another part includes nearly-floating charge compensation zones, so that an increased control electrode surface has a monolithically integrated additional capacitance CZGD in a cell region of the semiconductor device.Type: ApplicationFiled: June 15, 2011Publication date: October 6, 2011Applicant: Infineon Technologies Austria AGInventors: Armin Willmeroth, Winfried Kaindl, Carolin Tolksdorf, Michael Rueb
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Publication number: 20110244646Abstract: A semiconductor device with a dynamic gate drain capacitance. One embodiment provides a semiconductor device. The device includes a semiconductor substrate, a field effect transistor structure including a source region, a first body region, a drain region, a gate electrode structure and a gate insulating layer. The gate insulating layer is arranged between the gate electrode structure and the body region. The gate electrode structure and the drain region partially form a capacitor structure including a gate-drain capacitance configured to dynamically change with varying reverse voltages applied between the source and drain regions. The gate-drain capacitance includes at least one local maximum at a given threshold or a plateau-like course at given reverse voltage.Type: ApplicationFiled: June 15, 2011Publication date: October 6, 2011Applicant: INFINEON TECHNOLOGIES AUSTRIA AGInventors: Anton Mauder, Hans-Joachim Schulze, Carolin Tolksdorf, Winfried Kaindl, Armin Willmeroth
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Patent number: 7982253Abstract: A semiconductor device with a dynamic gate drain capacitance. One embodiment provides a semiconductor device. The device includes a semiconductor substrate, a field effect transistor structure including a source region, a first body region, a drain region, a gate electrode structure and a gate insulating layer. The gate insulating layer is arranged between the gate electrode structure and the body region. The gate electrode structure and the drain region partially form a capacitor structure including a gate-drain capacitance configured to dynamically change with varying reverse voltages applied between the source and drain regions. The gate-drain capacitance includes at least one local maximum at a given threshold or a plateau-like course at given reverse voltage.Type: GrantFiled: August 1, 2008Date of Patent: July 19, 2011Assignee: Infineon Technologies Austria AGInventors: Anton Mauder, Hans-Joachim Schulze, Carolin Tolksdorf, Winfried Kaindl, Armin Willmeroth
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Patent number: 7977737Abstract: A semiconductor device with inherent capacitances and method for its production. The semiconductor device has an inherent feedback capacitance between a control electrode and a first electrode. In addition, the semiconductor device has an inherent drain-source capacitance between the first electrode and a second electrode. At least one monolithically integrated additional capacitance is connected in parallel to the inherent feedback capacitance or in parallel to the inherent drain-source capacitance. The additional capacitance comprises a first capacitor surface and a second capacitor surface opposite the first capacitor surface. The capacitor surfaces are structured conductive layers of the semiconductor device on a front side of the semiconductor body, between which a dielectric layer is located and which form at least one additional capacitor.Type: GrantFiled: March 6, 2008Date of Patent: July 12, 2011Assignee: Infineon Technologies Austria AGInventors: Armin Willmeroth, Winfried Kaindl, Carolin Tolksdorf, Anton Mauder, Holger Kapels, Gerald Deboy, Franz Hirler
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Patent number: 7973359Abstract: A semiconductor device with a charge carrier compensation structure. In one embodiment, the semiconductor device has a central cell field with a gate and source structure. At least one bond contact area is electrically coupled to the gate structure or the source structure. A capacitance-increasing field plate is electrically coupled to at least one of the near-surface bond contact areas.Type: GrantFiled: August 19, 2008Date of Patent: July 5, 2011Assignee: Infineon Technologies Austria AGInventors: Franz Hirler, Armin Willmeroth, Anton Mauder, Gerald Deboy, Holger Kapels, Carolin Tolksdorf, Frank Pfirsch
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Patent number: 7973362Abstract: A semiconductor component includes a semiconductor body having an edge with an edge zone of a first conductivity type. Charge compensation regions of a second conductivity type are embedded into the edge zone, with the charge compensation regions extending from a top side of the semiconductor component vertically into the semiconductor body. For the number Ns of charge carriers present in a volume Vs between two charge compensation regions that are adjacent in a direction perpendicular to the edge, and for the number Np of charge carriers present in a volume Vp between two charge compensation regions that are adjacent in a direction parallel to the edge, Np>Ns holds true.Type: GrantFiled: October 3, 2007Date of Patent: July 5, 2011Assignee: Infineon Technologies Austria AGInventors: Armin Willmeroth, Michael Rueb, Carolin Tolksdorf, Markus Schmitt
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Patent number: 7821064Abstract: A lateral MISFET having a semiconductor body has a doped semiconductor substrate of a first conduction type and an epitaxial layer of a second conduction type, which is complementary to the first conduction type, the epitaxial layer being provided on the semiconductor substrate. This MISFET has, on the top side of the semiconductor body, a drain, a source, and a gate electrode with gate insulator. A semiconductor zone of the first conduction type is embedded in the epitaxial layer in a manner adjoining the gate insulator, a drift zone of the second conduction type being arranged between the semiconductor zone and the drain electrode in the epitaxial layer. The drift zone has pillar-type regions which are arranged in rows and columns and whose boundary layers have a metal layer which in each case forms a Schottky contact with the material of the drift zone.Type: GrantFiled: March 14, 2006Date of Patent: October 26, 2010Assignee: Infineon Technologies Austria AGInventors: Michael Rueb, Markus Schmitt, Carolin Tolksdorf, Uwe Wahl, Armin Willmeroth