Abstract: A method for inspection of a semiconductor device is disclosed. In one aspect, the method includes performing a processing step in manufacturing of the semiconductor device, wherein a compound is at least in contact with the semiconductor device. The method also includes capturing an image on a two-dimensional image sensor of an area of at least part of the semiconductor device, wherein the captured image comprises spectral information for a plurality of positions in the area, and wherein the spectral information comprises intensity of incident electro-magnetic radiation for a plurality of different wavelength bands across a spectrum of wavelengths. The method also includes processing the spectral information of the captured image for each of the plurality of positions to determine whether residue of the compound is present in the position.