Abstract: A chemical solder is described that includes an organometallic complex or compound which thermally degrades within a predetermined temperature range to a metal and volatile compounds. The solder also includes a polymeric matrix that decomposes within the same temperature range to volatile fractions, thereby leaving only the metal. A method for bonding first and second bodies is disclosed wherein a chemical solder, as above-described, is disposed between the first and second bodies and heat is applied to elevate the solder to the predetermined temperature range to thermally degrade the organometallic compound and to decompose the polymeric matrix. The remaining metal bonds the first and second bodies.

Abstract: Certain organic polymeric materials are capable of reversibly accepting or donating electrons from a reducing entity. The redox sites in the polymer accept electrons and, as a result, a change in the properties of the polymer occurs. This change is useful in modifying or etching the polymeric material. The material can be modified by incorporation of metallic seeds into the material at a controlled depth. The seeds are incorporated by interaction of cations of the metals with the redox sites in the polymer, which cause the reduction of the cations to form the neutral metallic seeds. Subsequent exposure of the polymeric material containing the seeds to an electroless bath causes further deposition of metal having the desirable characteristic of good adhesion to the polymeric material. Etching of the polymeric material can be carried out as a result of an increase in solubility of the polymer in aprotic solvents when its redox sites have accepted electrons.

Abstract: Certain organic polymeric materials are capable of reversibly accepting or donating electrons from a reducing entity. The redox sites in the polymer accept electrons and, as a result, a change in the properties of the polymer occurs. This change is useful in modifying or etching the polymeric material The material can be modified by incorporation of metallic seeds into the material at a controlled depth. The seeds are incorporated by interaction of cations of the metals with the redox sites in the polymer, which cause the reduction of the cations to form the neutral metallic seeds. Subsequent exposure of the polymeric material containing the seeds to an electroless bath causes further deposition of metal having the desirable characteristic of good adhesion to the polymeric material. Etching of the polymeric material can be carried out as a result of an increase in solubility of the polymer in aprotic solvents when its redox sites have accepted electrons.

Abstract: Certain organic polymeric materials are capable of reversibly accepting or donating electrons from a reducing entity. The redox sites in the polymer accept electrons and, as a result, a change in the properties of the polymer occurs. This change is useful in modifying or etching the polymeric material. The material can be modified by incorporation of metallic seeds into the material at a controlled depth. The seeds are incorporated by interaction of cations of the metals with the redox sites in the polymer, which cause the reduction of the cations to form the neutral metallic seeds. Subsequent exposure of the polymeric material containing the seeds to an electroless bath causes further deposition of metal having the desirable characteristic of good adhesion to the polymeric material. Etching of the polymeric material can be carried out as a result of an increase in solubility of the polymer in aprotic solvents when its redox sites have accepted electrons.

Abstract: A method for seeding the surface of a polyimide film which has been generated from a precursor polyamic acid film comprising the steps of: generating a film of polyamic acid on a substance (which may be done by conventional spin coating or by other solution coating techniques well known in the art); then either exposing the polyamic acid film to a solution containing palladium cations; heat-treating the palladium-treated film in a time/temperature schedule that causes imidization of the polymer to occur; exposing the seeded film to an electroless plating bath which causes the deposition of blanket metal film on the surface of the polymer film; or curing the film to the polyimide form; mechanically abrading the film surface, exposing the film to a solution containing palladium cations; exposing the seeded film to an electroless plating bath which causes the deposition of blanket metal film on the surface of the polymer film.

Abstract: Certain organic polymeric materials are capable of reversibly accepting or donating electrons from a reducing entity. The redox sites in the polymer accept electrons and, as a result, a change in the properties of the polymer occurs. This change is useful in modifying or etching the polymeric material. The material can be modified by incorporation of metallic seeds into the material at a controlled depth. The seeds are incorporated by interaction of cations of the metals with the redox sites in the polymer, which cause the reduction of the cations to form the neutral metallic seeds. Subsequent exposure of the polymeric material containing the seeds to an electroless bath causes further deposition of metal having the desirable characteristic of good adhesion to the polymeric material. Etching of the polymeric material can be carried out as a result of an increase in solubility of the polymer in aprotic solvents when its redox sites have accepted electrons.

Abstract: A chemical solder is described that includes an organometallic which thermally degrades within a predetermined temperature range to a metal and volatile compounds. The solder also includes a polymeric matrix that decomposes within the same temperature range to volatile fractions, thereby leaving only the metal.A method for bonding first and second bodies is disclosed wherein a chemical solder, as above-described, is disposed between the first and second bodies and heat is applied to elevate the solder to the predetermined temperature range to thermally degrade the organometallic compound and to decompose the polymeric matrix. The remaining metal bonds the first and second bodies.

Abstract: A method and apparatus to encapsulate a device and joints coupled to conductive leads with an encapsulating material. A fixture has a recess to hold via a vacuum the device in place. Conduits in the fixture supply air around the device to form an air dam that flows outward around the device and the leads. A nozzle supplies a metered amount of material to the surface of the device. By controlling the temperature of the fixture and/or the air forming the air dam, the flow of material can be confined to the surface of the device and the joints as it cures. The method can also provide encapsulant edge capping to reduce device stresses.

Abstract: A semiconductor packaging technique employing a high Young's modulus, localized, external connection to pad, bond immobilizing member, together with, as needed, a low Young's modulus environmental protection covering member. A chip of Si or GaAs has an annulus of high Young's modulus epoxy over the line of external connections such as beam leads or wire bonds near the edge and a coating of silicone over the entire chip surface including the annulus.

Abstract: An apparatus to encapsulate a device and joints coupled to conductive leads with an encapsulating material. A fixture has a recess to hold via a vacuum the device in place. Conduits in the fixture supply air around the device to form an air dam that flows outward around the device and the leads. A nozzle supplies a metered amount of material to the surface of the device. By controlling the temperature of the fixture and/or the air forming the air dam, the flow of material can be confined to the surface of the device and the joints as it cures. The method can also provide encapsulant edge capping to reduce device stresses.

Abstract: A process for preparing a substrate, e.g., an epoxy printed circuit board, for subsequent metallization. Active chemical sites are formed adhering to the substrate surface. The substrate is then exposed to a vapor of a volatile organometallic compound, which chemically reacts with the active sites and is decomposed to at least a species of the metal constituent of the compound. This species adheres to the substrate and can be transformed into the free metal which is useful as a seed for subsequent electroless deposition of a metal thereon. If selective deposition is desired, a resist masking layer is used prior to forming the seed layer. Volatile organopalladium compounds, such as (cyclopentadienyl)(allyl)palladium and bis(allyl)pallidium, are particularly effective for depositing a palladium seed which is particularly effective for electroless deposition of copper.

Abstract: An integrated circuit device package in which integrated circuit devices are mounted with active faces placed facing each other to form a double-device structure. Input/output terminals on the active faces of each device can be electrically interconnected by placing an interconnection means between the chips to electrically interconnect input/output terminals on the active faces of the first and second device. Beam leads, each having an inner and outer lead bond site, project outwardly from between the devices where each of the inner lead bond site is solderlessly bonded between conducting patterns on each device bonded. A series of double-device structures can be formed on a tape having a plurality of sets of beam lead patterns thereon. Each beam lead of each set having an inner and outer lead bond site, projects outwardly from between the double-device structure, the inner lead bond site being solderlessly bonded between conducting patterns on each device.

Abstract: This invention employs a carrier upon which a thin conductive film has been applied. The conductive film is of a metallic material which exhibits a surface energy such that it is not readily wetted by solder. A patterned mask is disposed on the conductive film, with the mask having openings which expose selected areas of the conductive film. Solder is deposited in the mask openings and is weakly adherent to the exposed areas of the conductive film. The carrier is then disposed over and in registration with conductive land areas of a circuit carrier, such that the solder in the mask openings is aligned with the land areas of the circuit carrier. Subsequently, the carrier and circuit land areas are brought into contact, heated, the solder bonded to the lands, and the carrier is lifted away for subsequent reuse.In another species of the invention, a thin film layer of solder is directly deposited on and weakly adherent to a flexible base layer.

Abstract: A cement composition containing cement, water, and a silanol terminated polysiloxane, and cured products thereof exhibiting improved thermal stability and dielectric constant.

Abstract: A process for selectively depositing copper by first selectively depositing palladium seeds by irradiating a palladium compound with light. Following the deposition of the palladium seeds, copper is deposited by an electroless process.