Abstract: Polymer blobs that are development related defects are substantially eliminated in patterned photoresist masks by a heat treatment of the wafer performed at a development step in two different manners according to the present invention. In the first method, after the development has been performed as standard, the wafer is heated at 140° C. and before cooling takes place, it is rinsed with deionized water (DIW) at room temperature. In the second method, the wafer is either developed as standard but rinsed with 60° C. DIW instead of 22° C. DIW, or, after standard development, it is submitted to an extra rinse step with 60° C. DIW.

Abstract: Polymer blobs that are development related defects are substantially eliminated in the patterned photoresist masks by a heat treatment of the wafer performed at the development step in two different manners according to the present invention. In the first method, after the development has been performed as standard, the wafer is heated at 140° C. and before cooling takes place, it is rinsed with deionized water (DIW) at room temperature. In the second method, the wafer is either developed as standard but rinsed with 60° C. DIW instead of 22° C. DIW or, after standard development, it is submitted to an extra rinse step with 60° C. DIW.