Patents by Inventor Caroline Bringolf-Penner

Caroline Bringolf-Penner has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Photodetector with an improved resolution
    Patent number: 7964928
    Abstract: A photodetector made in monolithic form in a lightly-doped substrate of a first conductivity type. This photodetector includes at least two photodiodes and includes a first region of the first conductivity type more heavily doped than the substrate extending at least between the two photodiodes; and a second region of the first conductivity type more heavily doped than the substrate and extending under the first region and under one of the two photodiodes, the first region or the second region, with the first region, delimiting a substrate portion at the level of said one of the two photodiodes, and the second region, with the first region, delimiting an additional substrate portion at the level of the other one of the two photodiodes.
    Type: Grant
    Filed: November 20, 2006
    Date of Patent: June 21, 2011
    Assignee: STMicroelectronics S.A.
    Inventors: François Roy, Thomas Girault, Yann Marcellier, Caroline Bringolf-Penner
  • Photodetector with an improved resolution
    Publication number: 20070114627
    Abstract: A photodetector made in monolithic form in a lightly-doped substrate of a first conductivity type. This photodetector comprises at least two photodiodes and comprises a first region of the first conductivity type more heavily doped than the substrate extending at least between the two photodiodes; and a second region of the first conductivity type more heavily doped than the substrate and extending under the first region and under one of the two photodiodes, the first region or the second region, with the first region, delimiting a substrate portion at the level of said one of the two photodiodes, and the second region, with the first region, delimiting an additional substrate portion at the level of the other one of the two photodiodes.
    Type: Application
    Filed: November 20, 2006
    Publication date: May 24, 2007
    Applicant: STMicroelectronics S.A.
    Inventors: Francois Roy, Thomas Girault, Yann Marcellier, Caroline Bringolf-Penner