Abstract: An air dryer apparatus is provided for a vehicle air brake charging system. The air dryer apparatus comprises an air dryer governor assembly. The air dryer governor assembly includes a plastic sleeve having an external sleeve surface and an internal sleeve surface that defines a piston bore. The air dryer governor assembly also includes a piston disposed in the piston bore and slidable along the internal sleeve surface between a preset cut-out setting and a preset cut-in setting of the air dryer governor assembly. The air dryer governor assembly further includes one or more ribs disposed on the external sleeve surface to prevent deformation of the plastic sleeve when the piston slides along the internal sleeve surface between the preset cut-out and cut-in settings.

Abstract: A method for treating a surface is disclosed. According to some aspects, the method includes ejecting matter from the surface by projecting an ejection agent on the surface. The ejection agent is selected from gases, fluids in supercritical state, solid materials in divided form, solid materials in a gas vector and electromagnetic radiation. The method includes trapping the ejected matter in one or several pieces of an aerogel situated on trajector of the ejected matter. A device for carrying out this method as well as the use of an aerogel to trap the matter ejected from a surface during a treatment of that surface are also disclosed. The method may be applied in fields including cleaning, satinizing, polishing, deburring, etching, marking, pre-adhesion surface preparation metallization enameling, painting or varnishing operations are done, in particular electronics, microelectronics, optics, optoelectronics, bijouterie, jewelry, and the restoration of art and antiques.

Abstract: A method manufactures semiconductor chips each comprising a component implanted in the semiconductor. The method includes collectively implanting components onto a front face of a semiconductor wafer and fixing a plate of a transparent material onto the front face of the wafer. Fixing the plate of transparent material is preceded by a step of depositing, on the front face of the wafer, at least one layer of polymer material forming an optical filter. Application is particularly to the manufacturing of imagers.

Abstract: A method for treating a surface is disclosed. According to some aspects, the method includes ejecting matter from the surface by projecting an ejection agent on the surface. The ejection agent is selected from gases, fluids in supercritical state, solid materials in divided form,. solid materials in a as vector and electromagnetic radiation. The method includes trapping the ejected matter in one or several pieces of an aerogel situated on trajector of the ejected matter. A device for car in out this method as well as the use of an aerogel to trap the matter ejected from a surface during a treatment of that surface are also disclosed. The method may be applied in fields including cleaning, satinizing, polishing, deburring, etching, marking, pre-adhesion surface preparation metallization enameling, painting or varnishing operations are done, in particular electronics, microelectronics, optics, optoelectronics, bijouterie, jewelry, and the restoration of art and antiques.

Abstract: A method manufactures a digital image sensor including at least one optical lens using a hardenable liquid or gelatinous material. The method includes depositing a calibrated volume of the material on a lens formation base using a tubular needle of a small diameter, so that the volume of material deposited has at least one convex part under the effect of interface energies, and hardening all or part of the volume of deposited material.

Abstract: A method manufactures semiconductor chips each comprising a component implanted in the semiconductor. The method includes collectively implanting components onto a front face of a semiconductor wafer and fixing a plate of a transparent material onto the front face of the wafer. Fixing the plate of transparent material is preceded by a step of depositing, on the front face of the wafer, at least one layer of polymer material forming an optical filter. Application is particularly to the manufacturing of imagers.

Abstract: A method manufactures semiconductor chips each comprising a component implanted in the semiconductor. The method includes collectively implanting components onto a front face of a semiconductor wafer and fixing the a plate of a transparent material onto the front face of the wafer. Fixing the plate of transparent material is preceded by a step of depositing, on the front face of the wafer, at least one layer of polymer material forming an optical filter. Application is particularly to the manufacturing of imagers.

Abstract: A method manufactures semiconductor chips each comprising a component implanted in the semiconductor. The method includes collectively implanting components onto a front face of a semiconductor wafer and fixing a plate of a transparent material onto the front face of the wafer. Fixing the plate of transparent material is preceded by a step of depositing, on the front face of the wafer, at least one layer of polymer material forming an optical filter. Application is particularly to the manufacturing of imagers.

Abstract: A method for processing a scratched surface of a material that is transparent to electromagnetic radiation includes a step of depositing onto the scratched surface at least one layer of a polymer material having substantially the same optical index as the material having the scratched surface, so as to fill in the scratches, and a step of polymerizing the polymer material. The method may be applied to the manufacture of semiconductor wafers including imagers.

Abstract: A method manufactures a digital image sensor including at least one optical lens using a hardenable liquid or gelatinous material. The method includes depositing a calibrated volume of the material on a lens formation base using a tubular needle of a small diameter, so that the volume of material deposited has at least one convex part under the effect of interface energies, and hardening all or part of the volume of deposited material.

Abstract: A method for processing a first semiconductor wafer having a first surface and a second surface, by placing, on the second surface of the first wafer, a second wafer with an interposed resist layer, and thinning down the first surface of the first semiconductor wafer.

Abstract: A method for forming on a Ge or Si monocrystalline substrate successive Si/Ge, Si/SiGe, or Si/SiGe/Ge layers for a Ge substrate and inversely for a Si substrate is described. Electrochemical treatment of the stack of layers to make the layers porous and form therein residual crystallites is also described. The invention may be used to provide devices having layers of planes of quantum drops.

Abstract: Method for preparing a silicon substrate to form a thin electric insulating layer (24), characterized in that it comprises: a deoxidation step of at least one part of the silicon substrate (10), then a heat treatment step of the substrate at a temperature of 750° C. or less, the heat treatment being conducted in a NO-containing atmosphere at a pressure of 5.103 Pa (50 mBr) or less, in order to form a layer of silicon oxynitride (22) on the substrate. Use for the production of EPROM and DRAM memories.

Abstract: The invention concerns a method which consists in: (a) stabilization of the monocrystalline silicon substrate temperature at a first predetermined temperature T1 of 400 to 500° C.; (b) chemical vapour deposition (CVD) of germanium at said first predetermined temperature T1 until a base germanium layer is formed on the substrate, with a predetermined thickness less than the desired final thickness; (c) increasing the CVD temperature from said first predetermined temperature T1 up to a second predetermined temperature T2 of 750 to 850° C.; and (d) carrying on with CVD of germanium at said second predetermined temperature T2 until the desired final thickness for the monocrystalline germanium final layer is obtained. The invention is useful for making semiconductor devices.

Abstract: A MOSFET transistor comprising a gate made of silicon-germanium alloy, formed on a single crystal silicon substrate by means of a thin insulating layer, and drain and source regions implanted in the substrate on each side of the gate, characterized in that the gate comprises side regions presenting an increasing germanium percentage towards the sides of the gate facing the drain and source regions. Advantage: compensation of the short channel effect by locally decreasing the work function of the gate material near the drain and source regions.

Abstract: The process consists in depositing, by chemical vapour deposition using a mixture of silicon and germanium precursor gases, a single-crystal layer of silicon or germanium on a germanium or silicon substrate by decreasing or increasing the temperature in the range 800-450° C. and at the same time by increasing the Si/Ge or Ge/Si weight ratio from 0 to 100% in the precursor gas mixture, respectively.

Abstract: The process comprises: etching, in a semiconductor substrate (2), at least one trench (3) with predetermined width and depth; depositing, on the substrate and in the trench, a stack of successive and alternate layers of Si1−xGex (0<x≦1) and Si (5-8), the number and the thickness of which depend on the final use intended for the heterostructure; and chemical-mechanical polishing in order to obtain a final heterostructure having a plane upper main surface, level with which the stack layers deposited in the trench are flush.

Abstract: A method of nitriding the gate oxide layer of a semiconductor device includes the chemical growth on a silicon substrate of a native silicon oxide layer ≦1 nm thick; treating said substrate coated with the native silicon oxide layer with gas NO at a temperature ≦700° C. and a pressure level ≦104 Pa to obtain a nitrided native silicon oxide layer; and the growth of the gate oxide layer. The method is applicable to PMOS devices. Further modifications and alternative embodiments of various aspects of the invention will be apparent to those skilled in the art in view of this description. Accordingly, this description is to be construed as illustrative only and is for the purpose of teaching those skilled in the art the general manner of carrying out the invention. It is to be understood that the forms of the invention shown and described herein are to be taken as the presently preferred embodiments.

Abstract: A method which includes, prior to depositing the encapsulating silicon layer: A) depositing on the Si1−xGex layer a thin film of amorphous or polycrystalline silicon, then in treating said silicon film with gas nitric oxide at a temperature between 450 to 600° C. and at a pressure level of 104 to 105 Pa to obtain a thin nitrided silicon film; or B) depositing on the Si1−xGex layer a thin film of amorphous or polycrystalline silicon and oxidizing the silicon film to form a surface film of silicon oxide less than 1 nm thick and optionally treating the oxidized amorphous or polycrystalline silicon film with nitric oxide as in A). The invention is applicable to CMOS semiconductors.

Abstract: The process consists in depositing, by chemical vapor deposition using a mixture of silicon and germanium precursor gases, a single-crystal layer of silicon or germanium on a germanium or silicon substrate by decreasing or increasing the temperature in the range 800-450.degree. C. and at the same time by increasing the Si/Ge or Ge/Si weight ratio from 0 to 100% in the precursor gas mixture, respectively.