Abstract: A method of producing a patterned inorganic thin film element includes providing a substrate having a patterned thin layer of polymeric inhibitor on the surface. The substrate and the patterned thin layer of polymeric inhibitor are exposed to a highly reactive oxygen process. An inorganic thin film layer is deposited on the substrate in areas without inhibitor using an atomic layer deposition process.

Abstract: A liquid dispenser array structure includes a liquid dispensing channel. A first liquid supply provides a carrier liquid that flows continuously through an outlet of the liquid dispensing channel during a drop dispensing operation. A plurality of liquid dispensers, located on a common substrate, includes a liquid supply channel and a second liquid supply that provides a functional liquid, immiscible in the carrier liquid, to the liquid dispensing channel through the liquid supply channel. A drop formation device, associated with an interface of the liquid supply channel and the liquid dispensing channel, is selectively actuated to form a discrete drop of the functional liquid in the carrier liquid flowing through the liquid dispensing channel.

Abstract: A liquid dispensing system includes a liquid dispenser array structure. A first liquid supply provides a carrier liquid that flows continuously through an outlet of a liquid dispensing channel during a drop dispensing operation. A plurality of liquid dispensers, located on a common substrate, includes a second liquid supply that provides a functional liquid, immiscible in the carrier liquid, to the liquid dispensing channel through a liquid supply channel. A drop formation device, associated with an interface of the liquid supply channel and the liquid dispensing channel, is selectively actuated to form discrete drops of the functional liquid in the carrier liquid flowing through the liquid dispensing channel. A receiver conveyance mechanism and the liquid dispenser array structure are positioned relative to each other such that the discrete drops of the functional liquid are applied to a receiver.

Abstract: A method of producing a patterned inorganic thin film dielectric stack includes providing a substrate. A first patterned deposition inhibiting material layer is provided on the substrate. A first inorganic thin film dielectric material layer is selectively deposited on a region of the substrate where the first deposition inhibiting material layer is not present using an atomic layer deposition process. The first deposition inhibiting and first inorganic thin film dielectric material layers are simultaneously treated after deposition of the first inorganic thin film dielectric material layer. A second patterned deposition inhibiting material layer is provided on the substrate. A second inorganic thin film dielectric material layer is selectively deposited on a region of the substrate where the second deposition inhibiting material layer is not present using an atomic layer deposition process.

Abstract: A method of producing a patterned inorganic thin film element includes providing a substrate. A thin layer of polymeric inhibitor is uniformly depositing on the substrate. A patterned mask having open areas is provided on the thin layer of polymeric inhibitor. The thin layer of polymeric inhibitor is patterned by removing inhibitor from areas exposed by the open areas of the patterned mask using a highly reactive oxygen process. An inorganic thin film layer is deposited on the substrate in the areas exposed by the removal of the thin layer of polymeric inhibitor using an atomic layer deposition process.

Abstract: A method of producing a patterned inorganic thin film element includes providing a substrate. A thin layer of polymeric inhibitor is uniformly depositing on the substrate. A patterned mask having open areas is provided on the thin layer of polymeric inhibitor. The thin layer of polymeric inhibitor is patterned by removing inhibitor from areas exposed by the open areas of the patterned mask using a highly reactive oxygen process. An inorganic thin film layer is deposited on the substrate in the areas exposed by the removal of the thin layer of polymeric inhibitor using an atomic layer deposition process.

Abstract: A method of producing a patterned inorganic thin film element includes providing a substrate having a patterned thin layer of polymeric inhibitor on the surface. The substrate and the patterned thin layer of polymeric inhibitor are exposed to a highly reactive oxygen process. An inorganic thin film layer is deposited on the substrate in areas without inhibitor using an atomic layer deposition process.

Abstract: The invention relates to a process for forming a stacked transparent structure comprising providing a support, coating one side of said support with a multicolored mask, coating the other side of the support with a layer curable by visible light, and exposing the light-curable layer through the mask with visible light to cure the layer curable by light in exposed portions to form a cured pattern.

Abstract: A method of etching a silicon substrate includes providing a silicon substrate including a first surface and a second surface. A plurality of grooves spaced apart from each other are etched from the first surface of the silicon substrate. A dielectric material is deposited on the first surface of the silicon substrate and into the plurality of grooves. A hole through the silicon substrate is etched from the second surface of the substrate to the dielectric material. A portion of the hole is located between the plurality of grooves.

Abstract: A MEMS device includes a silicon substrate. The silicon substrate includes a plurality of dielectric material grooves spaced apart from each other. The silicon substrate also includes a through hole with a portion of the through hole being located between the plurality of dielectric material grooves when viewed from a direction perpendicular to a surface of the silicon substrate.

Abstract: A method of etching a silicon substrate includes providing a silicon substrate including a first surface and a second surface. A plurality of grooves spaced apart from each other are etched from the first surface of the silicon substrate. A dielectric material is deposited on the first surface of the silicon substrate and into the plurality of grooves. A hole through the silicon substrate is etched from the second surface of the substrate to the dielectric material. A portion of the hole is located between the plurality of grooves.

Abstract: A continuous ink jet printing system capable of printing at multiple predetermined print resolutions. The system comprises a drop generator having an array of nozzles for emitting a plurality of continuous streams of liquid for applying ink to media driven in a media advance direction having a source for pressurized liquid for supplying pressurized liquid to the plurality of nozzles. The plurality of nozzles have effective nozzle diameters D0 and a stimulation device associated with each nozzle of the plurality of nozzles for forming ink drops having predetermined drop volumes from the continuous streams of liquid. The predetermined drop volumes include non-print drops of a unit volume V0, and print drops having volumes that are integer multiples of the unit volume, mV0, wherein m is an integer greater than 1. A catcher collects the non-print drops and a selector selects a predetermined print resolution. Each predetermined print resolution has a corresponding print drop volume mV0.

Abstract: A method of producing an inorganic multi-layered thin film structure includes providing a substrate. A patterned deposition inhibiting material layer is provided on the substrate. A first inorganic thin film material layer is selectively deposited on a region of the substrate where the deposition inhibiting material layer is not present using an atomic layer deposition process. A second inorganic thin film material layer is selectively deposited on the region of the substrate where the thin film deposition inhibiting material layer is not present using an atomic layer deposition process.

Abstract: A method of producing an inorganic thin film dielectric material layer includes providing a substrate. A first inorganic thin film dielectric material layer is deposited on the substrate using an atomic layer deposition process. The first inorganic thin film dielectric material layer is treated after its deposition. A patterned deposition inhibiting material layer is provided on the substrate. A second inorganic thin film dielectric material layer is selectively deposited on a region of the substrate where the deposition inhibiting material layer is not present using an atomic layer deposition process.

Abstract: A method of dispensing liquid includes providing a carrier liquid under pressure using a first liquid supply that flows from the first liquid supply through a first liquid supply channel through a liquid dispensing channel through a liquid return channel and back to the first liquid supply continuously during a drop dispensing operation. A functional liquid is provided to the liquid dispensing channel through a second liquid supply channel using a second liquid supply. A drop formation device is selectively actuated to form a discrete drop of the functional liquid in the carrier liquid flowing through the liquid dispensing channel. The functional liquid is immiscible in the carrier liquid. The drop ejection device is selectively actuated to divert the discrete drop of the functional liquid and a portion of the carrier liquid flowing through the liquid dispensing channel toward an outlet opening of the liquid dispensing channel.

Abstract: A liquid dispenser includes a first liquid supply that provides a carrier liquid under pressure that flows from the first liquid supply through a first liquid supply channel through a liquid dispensing channel through a liquid return channel and back to the first liquid supply continuously during a drop dispensing operation. A second liquid supply provides a functional liquid to the liquid dispensing channel through a second liquid supply channel. A drop formation device, associated with an interface of the second liquid supply channel and the liquid dispensing channel, is selectively actuated to form a discrete drop of the functional liquid in the carrier liquid flowing through the liquid dispensing channel. The functional liquid is immiscible in the carrier liquid. A drop ejection device is selectively actuated to divert the discrete drop of the functional liquid and a portion of the carrier liquid flowing through the liquid dispensing channel toward the outlet opening of the liquid dispensing channel.

Abstract: The invention relates to a process for forming a structure comprising providing a support, coating one side of said support with a colored mask, coating a layer photopatternable by visible light, and exposing the layer through the colored mask with visible light to photopattern the layer.

Abstract: A transistor includes a substrate; a gate including a first electrically conductive layer stack on the substrate; and a first inorganic thin film dielectric layer on the substrate with the first inorganic thin film dielectric layer having a first pattern. A second inorganic thin film dielectric layer, having a second pattern, is in contact with the first inorganic thin film dielectric layer. The first inorganic thin film dielectric layer and the second thin film dielectric layer have the same material composition. A semiconductor layer has a third pattern. A source/drain includes a second electrically conductive layer stack.

Abstract: A method of producing a patterned inorganic thin film dielectric stack includes providing a substrate. A first patterned deposition inhibiting material layer is provided on the substrate. A first inorganic thin film dielectric material layer is selectively deposited on a region of the substrate where the first deposition inhibiting material layer is not present using an atomic layer deposition process. The first deposition inhibiting and first inorganic thin film dielectric material layers are simultaneously treated after deposition of the first inorganic thin film dielectric material layer. A second patterned deposition inhibiting material layer is provided on the substrate. A second inorganic thin film dielectric material layer is selectively deposited on a region of the substrate where the second deposition inhibiting material layer is not present using an atomic layer deposition process.

Abstract: A method of producing an inorganic thin film dielectric material layer includes providing a substrate. A first inorganic thin film dielectric material layer is deposited on the substrate using an atomic layer deposition process. The first inorganic thin film dielectric material layer is treated after its deposition. A second inorganic thin film dielectric material layer is deposited on the treated surface of the first inorganic thin film dielectric material layer using an atomic layer deposition process.