Abstract: A rotating cylindrical sputtering target surface as part of a magnetron has cylindrical shields adjacent each end of the target to prevent arcing that undesirably occurs when certain materials are being sputtered, particularly dielectrics. If two or more rotating targets are employed in a single magnetron system, each is similarly shielded. In a preferred form, the target is provided with a single cylindrical shield that is cut away for a significant portion of the distance around the cylinder to provide an opening through which a sputtering region of the target is accessible, while maintaining shielding of the target end regions. This preferred shield is rotatable in order to allow the position of the sputtering activity to be selected.

Abstract: A method of depositing thin films of silicon based compounds, particularly silicon dioxide, by cathode reactive sputtering utilizes a rotating cylindrical magnetron driven by a d.c. potential. The result is a technique of forming a uniform film on large substrates with high deposition rates. Arcing normally associated with sputtering troublesome dielectric coatings such as silicon oxides is substantially eliminated.