Abstract: The molecular etcher carbonyl fluoride (COF2) or any of its variants, are provided for, according to the present invention, to increase the efficiency of etching and/or cleaning and/or removal of materials such as the unwanted film and/or deposits on the chamber walls and other components in a process chamber or substrate (collectively referred to herein as “materials”). The methods of the present invention involve igniting and sustaining a plasma, whether it is a remote or in-situ plasma, by stepwise addition of additives, such as but not limited to, a saturated, unsaturated or partially unsaturated perfluorocarbon compound (PFC) having the general formula (CyFz) and/or an oxide of carbon (COx) to a nitrogen trifluoride (NF3) plasma into a chemical deposition chamber (CVD) chamber, thereby generating COF2. The NF3 may be excited in a plasma inside the CVD chamber or in a remote plasma region upstream from the CVD chamber.

Abstract: The molecular etcher carbonyl fluoride (COF2) or any of its variants, are provided for, according to the present invention, to increase the efficiency of etching and/or cleaning and/or removal of materials such as the unwanted film and/or deposits on the chamber walls and other components in a process chamber or substrate (collectively referred to herein as “materials”). The methods of the present invention involve igniting and sustaining a plasma, whether it is a remote or in-situ plasma, by stepwise addition of additives, such as but not limited to, a saturated, unsaturated or partially unsaturated perfluorocarbon compound (PFC) having the general formula (CyFz) and/or an oxide of carbon (COx) to a nitrogen trifluoride (NF3) plasma into a chemical deposition chamber (CVD) chamber, thereby generating COF2. The NF3 may be excited in a plasma inside the CVD chamber or in a remote plasma region upstream from the CVD chamber.

Abstract: Methods of forming a conductive fluorine-doped metal oxide layer on a substrate by chemical vapor deposition are described. The methods may include heating the substrate in a processing chamber, and introducing a metal-containing precursor and a fluorine-containing precursor to the processing chamber. The methods may also include adding an oxygen-containing precursor to the processing chamber. The precursors are reacted to deposit the fluorine-doped metal oxide layer on the substrate. Methods may also include forming the conductive fluorine-doped metal oxide layer by plasma-assisted chemical vapor deposition. These methods may include providing the substrate in a processing chamber, and introducing a metal-containing precursor, and a fluorine-containing precursor to the processing chamber. A plasma may be formed that includes species from the metal-containing precursor and the fluorine-containing precursor. The species may react to deposit the fluorine-doped metal oxide layer on the substrate.

Abstract: A method of producing thin-film transparent conducting oxide (TCO) materials and devices that incorporate the transparent conducting oxide materials are disclosed. The method described is for coating glass, polymers, foils, or electronic devices with a TCO having improved characteristics.

Abstract: A method of reducing moisture in a fluorine-containing gas is described. The method may include the steps of providing a purifier material that includes elemental carbon, and flowing the unpurified fluorine-containing gas having an unpurified moisture concentration over or through the carbon-based purifier material. At least a portion of the moisture is captured in the purifier material so that a purified fluorine-containing gas that emerges downstream of the purifier material has a reduced moisture concentration that is about 50% or less of the unpurified moisture concentration.

Abstract: A method of storing and dispensing a fluid includes providing a vessel configured for selective dispensing of the fluid therefrom. The vessel contains an ionic liquid therein. The fluid is contacted with the ionic liquid for take-up of the fluid by the ionic liquid. There is substantially no chemical change in the ionic liquid and the fluid. The fluid is released from the ionic liquid and dispensed from the vessel.

Abstract: A method of storing and dispensing a fluid includes providing a vessel configured for selective dispensing of the fluid therefrom. A polymerized polymeric material is provided within the vessel. The fluid is contacted with the polymerized polymeric material for take-up of the fluid by the polymerized polymeric material. The fluid is released from the polymerized polymeric material and dispensed from the vessel.

Abstract: A method of storing and dispensing a fluid includes providing a vessel configured for selective dispensing of the fluid therefrom. The vessel contains an ionic liquid therein. The fluid is contacted with the ionic liquid for take-up of the fluid by the ionic liquid. There is substantially no chemical change in the ionic liquid and the fluid. The fluid is released from the ionic liquid and dispensed from the vessel.

Abstract: Methods of cleaning a process chamber used to fabricate electronics components are described. The methods may include the step of providing a cleaning gas mixture to the process chamber, where the cleaning gas mixture may include a fluorine-containing precursor, and where the cleaning gas mixture removes contaminants from interior surfaces of the processing chamber that are exposed to the cleaning gas mixture. The methods may also include the steps of removing the reaction products of the cleaning gas mixture from the process chamber, and providing a substrate to the process chamber following the evacuation of the reaction products from the process chamber. The cleaning gas mixture may include one or more hydrofluoronated ethers, and the contaminants may include one or more tin-containing contaminants.

Abstract: Methods of forming a conductive fluorine-doped metal oxide layer on a substrate by chemical vapor deposition are described. The methods may include heating the substrate in a processing chamber, and introducing a metal-containing precursor and a fluorine-containing precursor to the processing chamber. The methods may also include adding an oxygen-containing precursor to the processing chamber. The precursors are reacted to deposit the fluorine-doped metal oxide layer on the substrate. Methods may also include forming the conductive fluorine-doped metal oxide layer by plasma-assisted chemical vapor deposition. These methods may include providing the substrate in a processing chamber, and introducing a metal-containing precursor, and a fluorine-containing precursor to the processing chamber. A plasma may be formed that includes species from the metal-containing precursor and the fluorine-containing precursor. The species may react to deposit the fluorine-doped metal oxide layer on the substrate.

Abstract: A method of storing and dispensing a fluid includes providing a vessel configured for selective dispensing of the fluid therefrom. A solvent mixture comprising an ionic liquid and a cosolvent is provided within the vessel. The fluid is contacted with the solvent mixture for take-up of the fluid by the solvent mixture. The fluid is released from the ionic liquid and dispensed from the vessel.

Abstract: A method of storing and dispensing a fluid includes providing a vessel configured for selective dispensing of the fluid therefrom. The vessel contains an ionic liquid therein. The fluid is contacted with the ionic liquid for take-up of the fluid by the ionic liquid. There is substantially no chemical change in the ionic liquid and the fluid. The fluid is released from the ionic liquid and dispensed from the vessel.

Abstract: A method of storing and dispensing a fluid includes providing a vessel configured for selective dispensing of the fluid therefrom. A polymerized polymeric material is provided within the vessel. The fluid is contacted with the polymerized polymeric material for take-up of the fluid by the polymerized polymeric material. The fluid is released from the polymerized polymeric material and dispensed from the vessel.

Abstract: A method of storing and dispensing a fluid includes providing a vessel configured for selective dispensing of the fluid therefrom. The vessel contains an ionic liquid therein. The fluid is contacted with the ionic liquid for take-up of the fluid by the ionic liquid. There is substantially no chemical change in the ionic liquid and the fluid. The fluid is released from the ionic liquid and dispensed from the vessel.

Abstract: A method of storing and dispensing a fluid includes providing a vessel configured for selective dispensing of the fluid therefrom. The vessel contains an ionic liquid therein. The fluid is contacted with the ionic liquid for take-up of the fluid by the ionic liquid. There is substantially no chemical change in the ionic liquid and the fluid. The fluid is released from the ionic liquid and dispensed from the vessel.

Abstract: A method of storing and dispensing a fluid includes providing a vessel configured for selective dispensing of the fluid therefrom. A solvent mixture comprising an ionic liquid and a cosolvent is provided within the vessel. The fluid is contacted with the solvent mixture for take-up of the fluid by the solvent mixture. The fluid is released from the ionic liquid and dispensed from the vessel.

Abstract: A method of reducing moisture in a fluorine-containing gas is described. The method may include the steps of providing a purifier material that includes elemental carbon, and flowing the unpurified fluorine-containing gas having an unpurified moisture concentration over or through the carbon-based purifier material. At least a portion of the moisture is captured in the purifier material so that a purified fluorine-containing gas that emerges downstream of the purifier material has a reduced moisture concentration that is about 50% or less of the unpurified moisture concentration.

Abstract: A method of storing and dispensing a fluid includes providing a vessel configured for selective dispensing of the fluid therefrom. A solvent mixture comprising an ionic liquid and a cosolvent is provided within the vessel. The fluid is contacted with the solvent mixture for take-up of the fluid by the solvent mixture. The fluid is released from the ionic liquid and dispensed from the vessel.

Abstract: A method and device for storing and dispensing a fluid includes providing a vessel configured for selective dispensing of the fluid therefrom. Provided within a vessel is a nancomposite material comprising an imidazolium surfactant and an integral solvent that is essential to the formation of the nancomposite material. The fluid is contacted with the nanocomposite material for take-up of the fluid by the polymerized nanocomposite material. The fluid is released from the nanocomposite material and dispensed from the vessel.

Abstract: A method of storing and dispensing a fluid includes providing a vessel configured for selective dispensing of the fluid therefrom. The vessel contains an ionic liquid therein. The fluid is contacted with the ionic liquid for take-up of the fluid by the ionic liquid. There is substantially no chemical change in the ionic liquid and the fluid. The fluid is released from the ionic liquid and dispensed from the vessel.