Abstract: Apparatus and methods are provided for concurrently selecting multiple arrays of memory cells when accessing a memory element. A memory element includes a first array of one or more memory cells coupled to a first bit line node, a second array of one or more memory cells coupled to a second bit line node, access circuitry for accessing a first memory cell in the first array, a first transistor coupled between the first bit line node and the access circuitry, and a second transistor coupled between the second bit line node and the access circuitry. A controller is coupled to the first transistor and the second transistor, and the controller is configured to concurrently activate the first transistor and the second transistor to access the first memory cell in the first array.

Abstract: Apparatus for memory elements and related methods for performing an allocate operation are provided. An exemplary memory element includes a plurality of way memory elements and a replacement module coupled to the plurality of way memory elements. Each way memory element is configured to selectively output data bits maintained at an input address. The replacement module is configured to enable output of the data bits maintained at the input address of a way memory element of the plurality of way memory elements for replacement in response to an allocate instruction including the input address.

Abstract: Apparatus are provided for memory elements and related computing modules. An exemplary memory element includes a first array of one or more memory cells, a second array of one or more memory cells, write selection circuitry associated with the first array, and read selection circuitry associated with the second array. The write selection circuitry and the read selection circuitry are configured to be activated concurrently.

Abstract: Apparatus for memory elements and related methods for performing an allocate operation are provided. An exemplary memory element includes a plurality of way memory elements and a replacement module coupled to the plurality of way memory elements. Each way memory element is configured to selectively output data bits maintained at an input address. The replacement module is configured to enable output of the data bits maintained at the input address of a way memory element of the plurality of way memory elements for replacement in response to an allocate instruction including the input address.

Abstract: Apparatus and methods are provided for concurrently selecting multiple arrays of memory cells when accessing a memory element. A memory element includes a first array of one or more memory cells coupled to a first bit line node, a second array of one or more memory cells coupled to a second bit line node, access circuitry for accessing a first memory cell in the first array, a first transistor coupled between the first bit line node and the access circuitry, and a second transistor coupled between the second bit line node and the access circuitry. A controller is coupled to the first transistor and the second transistor, and the controller is configured to concurrently activate the first transistor and the second transistor to access the first memory cell in the first array.

Abstract: Apparatus are provided for memory elements and related computing modules. An exemplary memory element includes a first array of one or more memory cells, a second array of one or more memory cells, write selection circuitry associated with the first array, and read selection circuitry associated with the second array. The write selection circuitry and the read selection circuitry are configured to be activated concurrently.

Abstract: In one embodiment, a method for reducing synchronizer shadow involves: 1) receiving and deserializing a serialized data flit of known length, under control of a first clock domain; 2) before receiving all of the serialized data flit, beginning to resolve a valid signal for the deserialized data flit in a second clock domain; 3) upon receiving and deserializing all of the serialized data flit, latching the deserialized data flit under control of the first clock domain; and 4) after latching the deserialized data flit, and a predetermined number of clock edges of the second clock domain after beginning to resolve the valid signal, i) resolving the valid signal; and ii) transferring the latched data flit into the second clock domain in response to the valid signal.

Abstract: A method of serializing a data stream includes passing a series of data words from a source in a first clock domain to a serializer in a second clock domain and passing valid signals from the source to the serializer indicating when each of the data words is available from the source. The serializer divides each of the data words into a plurality of portions for serial transmission. The method also includes synchronizing the serializer and the source based on the first of the valid signals.

Abstract: An integrated circuit is disclosed herein. One embodiment of the integrated circuit comprises a power supply conductor, a circuit, at least one bypass capacitor, and an electrostatic protection circuit. The circuit may be located on a first piece of silicon, which may be located on a first insulator. The bypass capacitor may be located on a second piece of silicon, which may be located on second insulator. The electrostatic protection circuit may be located on a third piece of silicon, which may be located on a third insulator. The electrostatic protection circuit is connected to the power supply conductor by way of a first line. The bypass capacitor and the circuit are connected to the power supply conductor by way of a second line. The resistance of the second line is greater than the resistance of the first line.