Abstract: A method for tuning a target apparatus of a patterning process. The method includes obtaining a reference performance, and measurement data of a substrate subjected to the patterning process at the target apparatus, the measurement data indicative of a performance of the target apparatus; determining a cause of a performance mismatch based on a difference between the reference performance and the performance of the target apparatus, wherein the cause includes an optical characteristic; and responsive to the cause, adjusting an optical parameter associated with an adjustable optical characteristic to reduce the performance mismatch in the optical characteristic.

Abstract: A method for tuning a target apparatus of a patterning process. The method includes obtaining a reference performance, and measurement data of a substrate subjected to the patterning process at the target apparatus, the measurement data indicative of a performance of the target apparatus; determining a cause of a performance mismatch based on a difference between the reference performance and the performance of the target apparatus, wherein the cause includes an optical characteristic; and responsive to the cause, adjusting an optical parameter associated with an adjustable optical characteristic to reduce the performance mismatch in the optical characteristic.

Abstract: A method of projecting a pattern from a patterning device onto a substrate using a projection system, the method including using an optical phase adjustment apparatus in the projection system to apply a phase modification to radiation which has been diffracted from an assist feature of the pattern, the phase modification acting to reduce the size of an assist feature image exposed in resist on the substrate or prevent printing of the assist feature image in the resist on the substrate, while maintaining a contribution of the assist feature image to an image enhancement of a functional feature of the pattern.

Abstract: Embodiments of the invention related to lithographic apparatus and methods. A lithographic method comprises calculating a laser metric based on a spectrum of laser radiation emitted from a laser to a lithographic apparatus together with a representation of an aerial image of a pattern to be projected onto the substrate by the lithographic apparatus, and using the laser metric to modify operation of the laser or adjust the lithographic apparatus, and projecting the pattern onto the substrate.

Abstract: A method of projecting a pattern from a patterning device onto a substrate using a projection system, the method including using an optical phase adjustment apparatus in the projection system to apply a phase modification to radiation which has been diffracted from an assist feature of the pattern, the phase modification acting to reduce the size of an assist feature image exposed in resist on the substrate or prevent printing of the assist feature image in the resist on the substrate, while maintaining a contribution of the assist feature image to an image enhancement of a functional feature of the pattern.

Abstract: Embodiments of the invention related to lithographic apparatus and methods. A lithographic method comprises calculating a laser metric based on a spectrum of laser radiation emitted from a laser to a lithographic apparatus together with a representation of an aerial image of a pattern to be projected onto the substrate by the lithographic apparatus, and using the laser metric to modify operation of the laser or adjust the lithographic apparatus, and projecting the pattern onto the substrate.

Abstract: A lithographic double exposure processing method for providing to a device layer a pattern comprises the steps of expanding each feature of a first mask pattern and second mask pattern with a preselected dilatation distance before the first and second exposure steps, resist-processing the exposed radiation sensitive layer of a substrate to provide resist-processed features corresponding to said pattern whereby each resist-processed feature is expanded with respect to its nominal size, and shrinking said resist-processed features over a preselected shrinking distance by applying supplementary resist-processing to said resist-processed features.

Abstract: To compensate for birefringence of a mask in a lithographic projection apparatus, the birefringence of a mask is measured and stored as birefringence data in a data storage device. A birefringent compensation element is disposed in the optical path of the lithographic projection apparatus. Appropriate adjustments of the compensation element are determined as those optimally reducing impact of the mask birefringence on the state of polarization at substrate level.

Abstract: To compensate for birefringence of a mask in a lithographic projection apparatus, the birefringence of a mask is measured and stored as birefringence data in a data storage device. A birefringent compensation element is disposed in the optical path of the lithographic projection apparatus. Appropriate adjustments of the compensation element are determined as those optimally reducing impact of the mask birefringence on the state of polarization at substrate level.

Abstract: A lithographic double exposure processing method for providing to a device layer a pattern comprises the steps of expanding each feature of a first mask pattern and second mask pattern with a preselected dilatation distance before the first and second exposure steps, resist-processing the exposed radiation sensitive layer of a substrate to provide resist-processed features corresponding to said pattern whereby each resist-processed feature is expanded with respect to its nominal size, and shrinking said resist-processed features over a preselected shrinking distance by applying supplementary resist-processing to said resist-processed features.