Patents by Inventor Carsten Fülber

Carsten Fülber has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Photolithographic patterning process using a carbon hard mask layer of diamond-like hardness produced by a plasma-enhanced deposition process
    Patent number: 7368390
    Abstract: A carbon hard mask layer is applied to a substrate to be patterned by means of a plasma-enhanced deposition process in such a manner that it has a hardness comparable to that of diamond in at least one layer thickness section. During the production of this diamond-like layer thickness section, the parameters used in the deposition are set in such a manner that growth regions which are produced in a form other than diamond-like are removed again in situ by means of subsequent etching processes and that diamond-like regions which are formed are retained.
    Type: Grant
    Filed: October 29, 2002
    Date of Patent: May 6, 2008
    Assignee: Infineon Technologies AG
    Inventors: Guenther Czech, Carsten Fuelber, Markus Kirchhoff, Maik Stegemann, Mirko Vogt, Stephan Wege
  • Photolithographic patterning process using a carbon hard mask layer of diamond-like hardness produced by a plasma-enhanced deposition process
    Publication number: 20050112506
    Abstract: A carbon hard mask layer is applied to a substrate to be patterned by means of a plasma-enhanced deposition process in such a manner that it has a hardness comparable to that of diamond in at least one layer thickness section. During the production of this diamond-like layer thickness section, the parameters used in the deposition are set in such a manner that growth regions which are produced in a form other than diamond-like are removed again in situ by means of subsequent etching processes and that diamond-like regions which are formed are retained.
    Type: Application
    Filed: October 29, 2002
    Publication date: May 26, 2005
    Inventors: Gunter Czech, Carsten Fuelber, Marcus Kirchhoff, Maik Stegemann, Mirko Vogt, Stephan Wege
  • Lithography method and lithography mask
    Patent number: 6686098
    Abstract: Layers are patterned with a lithography method during the fabrication of integrated circuits. A mask, which may be reflective or transmissive, for carrying out the method. The photosensitive layers are exposed to radiation that is emitted by a radiation source. The radiation lies in the extreme ultraviolet region and is guided via the mask onto the photosensitive layers.
    Type: Grant
    Filed: December 4, 2000
    Date of Patent: February 3, 2004
    Assignee: Infineon Technologies AG
    Inventors: Günther Czech, Christoph Friedrich, Carsten Fülber, Rainer Käsmaier, Dietrich Widmann
  • Photomask, method of lithographically structuring a photoresist layer with the photomask, and method of producing magnetic memory elements
    Patent number: 6620559
    Abstract: The photomask and the associated method of lithography and mask technique enable production of a regular configuration of resist dots or holes. At least one photomask is a phase mask. The method is useful for the production of magnetic memory components, in particular MRAM memories, having elliptically shaped magnetic memory elements of high density.
    Type: Grant
    Filed: September 28, 2001
    Date of Patent: September 16, 2003
    Assignee: Infineon Technologies AG
    Inventors: Günther Czech, Wolfgang Henke, Carsten Fülber