Abstract: A holding apparatus, which is adapted for electrostatically holding a component, in particular a wafer, comprises an electrically insulating base body, which comprises a first pair of base body plates, which are connected to one another in a planar manner via a joint connection, and an electrode device with at least one electrode layer, which is arranged to generate an electrostatic holding force and extends parallel to the extension of the base body plates along the joining connection, wherein the joining connection comprises a diffusion bond connection, wherein the at least one electrode layer is connected in a planar manner to the respectively adjacent base body plate, and the at least one electrode layer has a contact section, which is arranged for electrically contacting the at least one electrode layer. Methods for manufacturing the holding apparatus are also described.

Abstract: A holding apparatus, which is adapted for electrostatically holding a component, in particular a wafer, comprises an electrically insulating base body, which comprises a first pair of base body plates, which are connected to one another in a planar manner via a joint connection, and an electrode device with at least one electrode layer, which is arranged to generate an electrostatic holding force and extends parallel to the extension of the base body plates along the joining connection, wherein the joining connection comprises a diffusion bond connection, wherein the at least one electrode layer is connected in a planar manner to the respectively adjacent base body plate, and the at least one electrode layer has a contact section, which is arranged for electrically contacting the at least one electrode layer. Methods for manufacturing the holding apparatus are also described.

Abstract: In a method for solid body joining of a carrier body (10) and a cover layer (20), in particular by anodic bonding, the cover layer (20) is pressed with a pressing force against a curved carrier body surface (11), wherein the pressing force during the solid body joining is distributed by way of a pressure intermediary device (30) areally and simultaneously over the whole cover layer (20) and is directed perpendicularly to the curvature of the carrier body surface (11). A composite component comprising a carrier body (10) and a cover layer (20) is also disclosed, wherein a curved areal joining region (13) is formed between a cover layer surface (21) and a carrier body surface (11).

Abstract: In a method for solid body joining of a carrier body (10) and a cover layer (20), in particular by anodic bonding, the cover layer (20) is pressed with a pressing force against a curved carrier body surface (11), wherein the pressing force during the solid body joining is distributed by way of a pressure intermediary device (30) areally and simultaneously over the whole cover layer (20) and is directed perpendicularly to the curvature of the carrier body surface (11). A composite component comprising a carrier body (10) and a cover layer (20) is also disclosed, wherein a curved areal joining region (13) is formed between a cover layer surface (21) and a carrier body surface (11).

Abstract: A method for operating a magnetic logic device (10) is described wherein at least one output variable O=F (IA, IB) is formed from input variables (IA, IB) by at least one logic operation with an operator function F of the magnetic logic device (10), whereby the logic device (10) is set at a starting state for executing the operator function F with a certain operator control signal (SET) before the operation, whereby the operator control signal is selected from a group of control signals with which various non-volatile starting states can be set in a controlled manner, each state being characteristic of a different logic function. Furthermore, a magnetic logic device (10) equipped for implementation of this method is also described.

Abstract: A method for operating a magnetic logic device (10) is described wherein at least one output variable O=F (IA, IB) is formed from input variables (IA, IB) by at least one logic operation with an operator function F of the magnetic logic device (10), whereby the logic device (10) is set at a starting state for executing the operator function F with a certain operator control signal (SET) before the operation, whereby the operator control signal is selected from a group of control signals with which various non-volatile starting states can be set in a controlled manner, each state being characteristic of a different logic function. Furthermore, a magnetic logic device (10) equipped for implementation of this method is also described.