Patents by Inventor Carsten Rohr

Carsten Rohr has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11959180
    Abstract: An anticorrosion coating and an article coated with an anticorrosion coating, especially for use in an aircraft, and a method of producing a coated article and a vehicle, especially an aircraft, including an anticorrosion coating or at least one such coated article. An anticorrosion coating includes an aluminum alloy having 0.03-0.5% by weight of tin. A coated article produced at least partly from a material and having at least partly been coated with the anticorrosion coating including an aluminum alloy having 0.03-0.5% by weight of tin. A method of producing the anticorrosion coating is also disclosed.
    Type: Grant
    Filed: March 16, 2021
    Date of Patent: April 16, 2024
    Assignees: Airbus Operations GmbH, Airbus Defence and Space GmbH
    Inventors: Carsten Blawert, Florian Gehrig, Tillmann Doerr, Bettina Kröger-Kallies, Oliver Rohr, Mikhail Zheludkevich, Maria del Rosario Silva Campos, Michael Störmer
  • Patent number: 7868247
    Abstract: A method of forming a photovoltaic device includes a plurality of quantum wells and a plurality of barriers. The quantum wells and barriers are disposed on an underlying layer. The barriers alternate with the quantum wells. One of the plurality of quantum wells and the plurality of barriers is comprised of tensile strained layers and the other of the plurality of quantum wells and the plurality of barriers is comprised of compressively strained layers. The tensile and compressively strained layers have elastic properties. The method includes selecting compositions and thicknesses of the barriers and quantum wells taking into account the elastic properties such that each period of one tensile strained layer and one compressively strained layer exerts substantially no shear force on a neighboring structure; providing the underlying layer; and forming the quantum sells and barriers on the underlying layer according to the derived compositions and thicknesses.
    Type: Grant
    Filed: March 28, 2008
    Date of Patent: January 11, 2011
    Assignee: Imperial Innovations Ltd.
    Inventors: Carsten Rohr, Keith W. J. Barnham, Nicholas Ekins-Daukes, James P. Connolly, Ian M. Ballard, Massimo Mazzer
  • Publication number: 20080251118
    Abstract: A method of forming a photovoltaic device includes a plurality of quantum wells and a plurality of barriers. The quantum wells and barriers are disposed on an underlying layer. The barriers alternate with the quantum wells. One of the plurality of quantum wells and the plurality of barriers is comprised of tensile strained layers and the other of the plurality of quantum wells and the plurality of barriers is comprised of compressively strained layers. The tensile and compressively strained layers have elastic properties. The method includes selecting compositions and thicknesses of the barriers and quantum wells taking into account the elastic properties such that each period of one tensile strained layer and one compressively strained layer exerts substantially no shear force on a neighboring structure; providing the underlying layer; and forming the quantum sells and barriers on the underlying layer according to the derived compositions and thicknesses.
    Type: Application
    Filed: March 28, 2008
    Publication date: October 16, 2008
    Inventors: Carsten Rohr, Keith W.J. Barnham, Nicholas Ekins-Daukes, James P. Connolly, Iam M. Ballard, Massimo Mazzer
  • Publication number: 20030089392
    Abstract: A photovoltaic cell to convert low energy photons is described, consisting of a p-i-n diode with a strain-balanced multi-quantum-well system incorporated in the intrinsic region. The bandgap of the quantum wells is lower than that of the lattice-matched material, while the barriers have a much higher bandgap. Hence the absorption can be extended to longer wavelengths, while maintaining a low dark current as a result of the higher barriers. This leads to greatly improved conversion efficiencies, particularly for low energy photons from low temperature sources. This can be achieved by strain-balancing the quantum wells and barriers, where each individual layer is below the critical thickness and the strain is compensated by quantum wells and barriers being strained in opposite directions minimizing the stress. The absorption can be further extended to longer wavelengths by introducing a strain-relaxed layer (virtual substrate) between the substrate and the active cell.
    Type: Application
    Filed: September 19, 2001
    Publication date: May 15, 2003
    Inventors: Carsten Rohr, Keith W.J. Barnham, Nicholas Ekins-Daukes, James P. Connolly, Ian M. Ballard, Massimo Mazzer