Patents by Inventor Carsten Schaffer
Carsten Schaffer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Semiconductor device having a corrosion-resistant metallization and method for manufacturing thereof
Patent number: 9355958Abstract: A semiconductor device includes a semiconductor substrate having a first side, a second side opposite the first side, an active area, an outer rim, and an edge termination area arranged between the outer rim and the active area. A metallization structure is arranged on the first side of the semiconductor substrate and comprising at least a first metal layer comprised of a first metallic material and a second metal layer comprised of a second metallic material, wherein the first metallic material is electrochemically more stable than the second metallic material. The first metal layer extends laterally further towards the outer rim than the second metal layer.Type: GrantFiled: October 31, 2013Date of Patent: May 31, 2016Assignee: Infineon Technologies AGInventors: Carsten Schäffer, Oliver Humbel, Mathias Plappert, Angelika Koprowski -
Semiconductor Device Having a Corrosion-Resistant Metallization and Method for Manufacturing Thereof
Publication number: 20150115449Abstract: A semiconductor device includes a semiconductor substrate having a first side, a second side opposite the first side, an active area, an outer rim, and an edge termination area arranged between the outer rim and the active area. A metallization structure is arranged on the first side of the semiconductor substrate and comprising at least a first metal layer comprised of a first metallic material and a second metal layer comprised of a second metallic material, wherein the first metallic material is electrochemically more stable than the second metallic material. The first metal layer extends laterally further towards the outer rim than the second metal layer.Type: ApplicationFiled: October 31, 2013Publication date: April 30, 2015Inventors: Carsten Schäffer, Oliver Humbel, Mathias Plappert, Angelika Koprowski -
Patent number: 8431988Abstract: A lateral trench transistor has a semiconductor body having a source region, a source contact, a body region, a drain region, and a gate trench, in which a gate electrode which is isolated from the semiconductor body is embedded. A heavily doped semiconductor region is provided within the body region or adjacent to it, and is electrically connected to the source contact, and whose dopant type corresponds to that of the body region.Type: GrantFiled: October 28, 2005Date of Patent: April 30, 2013Assignee: Infineon Technologies AGInventors: Franz Hirler, Uwe Wahl, Thorsten Meyer, Michael Rüb, Armin Willmeroth, Markus Schmitt, Carolin Tolksdorf, Carsten Schäffer
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Patent number: 8367532Abstract: A semiconductor device in one embodiment has a first connection region, a second connection region and a semiconductor volume arranged between the first and second connection regions. Provision is made, within the semiconductor volume, in the vicinity of the second connection region, of a field stop zone for spatially delimiting a space charge zone that can be formed in the semiconductor volume, and of an anode region adjoining the first connection region. The dopant concentration profile within the semiconductor volume is configured such that the integral of the ionized dopant charge over the semiconductor volume, proceeding from an interface of the anode region which faces the second connection region, in the direction of the second connection region, reaches a quantity of charge corresponding to the breakdown charge of the semiconductor device only near the interface of the field stop zone which faces the second connection region.Type: GrantFiled: July 26, 2012Date of Patent: February 5, 2013Assignee: Infineon Technologies AGInventors: Anton Mauder, Hans-Joachim Schulze, Frank Hille, Holger Schulze, Manfred Pfaffenlehner, Carsten Schäffer, Franz-Josef Niedernostheide
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Publication number: 20120315747Abstract: A semiconductor device in one embodiment has a first connection region, a second connection region and a semiconductor volume arranged between the first and second connection regions. Provision is made, within the semiconductor volume, in the vicinity of the second connection region, of a field stop zone for spatially delimiting a space charge zone that can be formed in the semiconductor volume, and of an anode region adjoining the first connection region. The dopant concentration profile within the semiconductor volume is configured such that the integral of the ionized dopant charge over the semiconductor volume, proceeding from an interface of the anode region which faces the second connection region, in the direction of the second connection region, reaches a quantity of charge corresponding to the breakdown charge of the semiconductor device only near the interface of the field stop zone which faces the second connection region.Type: ApplicationFiled: July 26, 2012Publication date: December 13, 2012Inventors: Anton MAUDER, Hans-Joachim SCHULZE, Frank HILLE, Holger SCHULZE, Manfred PFAFFENLEHNER, Carsten SCHÄFFER, Franz-Josef NIEDERNOSTHEIDE
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Publication number: 20110275202Abstract: A semiconductor device in one embodiment has a first connection region, a second connection region and a semiconductor volume arranged between the first and second connection regions. Provision is made, within the semiconductor volume, in the vicinity of the second connection region, of a field stop zone for spatially delimiting a space charge zone that can be formed in the semiconductor volume, and of an anode region adjoining the first connection region. The dopant concentration profile within the semiconductor volume is configured such that the integral of the ionized dopant charge over the semiconductor volume, proceeding from an interface of the anode region which faces the second connection region, in the direction of the second connection region, reaches a quantity of charge corresponding to the breakdown charge of the semiconductor device only near the interface of the field stop zone which faces the second connection region.Type: ApplicationFiled: July 20, 2011Publication date: November 10, 2011Inventors: Anton MAUDER, Hans-Joachim Schulze, Frank Hille, Holger Schulze, Manfred Pfaffenlehner, Carsten Schäffer, Franz-Josef Niedernostheide
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Publication number: 20090186462Abstract: A semiconductor device in one embodiment has a first connection region, a second connection region and a semiconductor volume arranged between the first and second connection regions. Provision is made, within the semiconductor volume, in the vicinity of the second connection region, of a field stop zone for spatially delimiting a space charge zone that can be formed in the semiconductor volume, and of an anode region adjoining the first connection region. The dopant concentration profile within the semiconductor volume is configured such that the integral of the ionized dopant charge over the semiconductor volume, proceeding from an interface of the anode region which faces the second connection region, in the direction of the second connection region, reaches a quantity of charge corresponding to the breakdown charge of the semiconductor device only near the interface of the field stop zone which faces the second connection region.Type: ApplicationFiled: April 2, 2009Publication date: July 23, 2009Inventors: Anton Mauder, Hans-Joachim Schulze, Frank Hille, Holger Schulze, Manfred Pfaffenlehner, Carsten Schaffer, Franz-Josef Niedernostheide
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Patent number: 7514750Abstract: A semiconductor device according to the invention has a first connection region, a second connection region and a semiconductor volume arranged between the first and second connection regions. Provision is made, within the semiconductor volume, in the vicinity of the second connection region, of a field stop zone for spatially delimiting a space charge zone that can be formed in the semiconductor volume, and of an anode region adjoining the first connection region. The dopant concentration profile within the semiconductor volume is configured such that the integral of the ionized dopant charge over the semiconductor volume, proceeding from an interface of the anode region which faces the second connection region, in the direction of the second connection region, reaches a quantity of charge corresponding to the breakdown charge of the semiconductor device only near the interface of the field stop zone which faces the second connection region.Type: GrantFiled: September 30, 2005Date of Patent: April 7, 2009Assignee: Infineon Technologies AGInventors: Anton Mauder, Hans-Joachim Schulze, Frank Hille, Holger Schulze, Manfred Pfaffenlehner, Carsten Schäffer, Franz-Josef Niedernostheide
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Patent number: 7253475Abstract: Transistor cells (2) of a power transistor component are in each case provided with a gate conductor structure that forms a gate electrode (52) in sections and is connected via a gate cell terminal (43) to a gate wiring line (81) led to a gate terminal (44) of the power transistor component (1). The gate conductor structure (5) has a desired fusible section (51) with an increased resistance, which is arranged within a cavity. The resistance of the desired fusible section (51) can be set in such a way that, in the event of a current loading of the magnitude of a value that is typical of a defective gate dielectric (41), the gate conductor section (5) is interrupted in the desired fusible section (51) and the gate electrode (52) is disconnected from the gate wiring line (81). The power transistor component can be produced with high yield and has a smaller number of failures during application operation.Type: GrantFiled: December 10, 2004Date of Patent: August 7, 2007Assignee: Infineon Technologies AGInventor: Carsten Schäffer
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Publication number: 20060205122Abstract: In a method for fabricating a field stop zone in a semiconductor body of a semiconductor component. According to the method, the semiconductor body is irradiated with protons, and the irradiated semiconductor body is subjected to a heat treatment process. Prior to the irradiation process, the semiconductor body is subjected to an RTA process in a nitriding atmosphere.Type: ApplicationFiled: February 17, 2006Publication date: September 14, 2006Applicant: Infineon Technologies Austria AGInventors: Hans-Joachim Schulze, Anton Mauder, Carsten Schaffer
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Publication number: 20060118862Abstract: A lateral trench transistor has a semiconductor body having a source region, a source contact, a body region, a drain region, and a gate trench, in which a gate electrode which is isolated from the semiconductor body is embedded. A heavily doped semiconductor region is provided within the body region or adjacent to it, and is electrically connected to the source contact, and whose dopant type corresponds to that of the body region.Type: ApplicationFiled: October 28, 2005Publication date: June 8, 2006Applicant: Infineon Technologies AGInventors: Franz Hirler, Uwe Wahl, Thorsten Meyer, Michael Rub, Armin Willmeroth, Markus Schmitt, Carolin Tolksdorf, Carsten Schaffer
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Publication number: 20060081923Abstract: A semiconductor device according to the invention has a first connection region, a second connection region and a semiconductor volume arranged between the first and second connection regions. Provision is made, within the semiconductor volume, in the vicinity of the second connection region, of a field stop zone for spatially delimiting a space charge zone that can be formed in the semiconductor volume, and of an anode region adjoining the first connection region. The dopant concentration profile within the semiconductor volume is configured such that the integral of the ionized dopant charge over the semiconductor volume, proceeding from an interface of the anode region which faces the second connection region, in the direction of the second connection region, reaches a quantity of charge corresponding to the breakdown charge of the semiconductor device only near the interface of the field stop zone which faces the second connection region.Type: ApplicationFiled: September 30, 2005Publication date: April 20, 2006Applicant: Infineon Technologies AGInventors: Anton Mauder, Hans-Joachim Schulze, Frank Hille, Holger Schulze, Manfred Pfaffenlehner, Carsten Schaffer, Franz-Josef Niedernostheide
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Publication number: 20050157571Abstract: Transistor cells (2) of a power transistor component are in each case provided with a gate conductor structure that forms a gate electrode (52) in sections and is connected via a gate cell terminal (43) to a gate wiring line (81) led to a gate terminal (44) of the power transistor component (1). The gate conductor structure (5) has a desired fusible section (51) with an increased resistance, which is arranged within a cavity. The resistance of the desired fusible section (51) can be set in such a way that, in the event of a current loading of the magnitude of a value that is typical of a defective gate dielectric (41), the gate conductor section (5) is interrupted in the desired fusible section (51) and the gate electrode (52) is disconnected from the gate wiring line (81). The power transistor component can be produced with high yield and has a smaller number of failures during application operation.Type: ApplicationFiled: December 10, 2004Publication date: July 21, 2005Applicant: Infineon Technologies AGInventor: Carsten Schaffer
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Patent number: 6815769Abstract: A trench power semiconductor component, in particular an IGBT, has an electrode (4) in a trench (3) that is laterally divided into a section (10) that serves as a gate and a section (11) that is connected to the source metallization (6). A method for making the trench power semiconductor component is also included.Type: GrantFiled: January 28, 2003Date of Patent: November 9, 2004Assignee: Infineon Technologies AGInventors: Frank Pfirsch, Carsten Schäffer
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Publication number: 20030160270Abstract: A trench power semiconductor component, in particular an IGBT, has an electrode (4) in a trench (3) that is laterally divided into a section (10) that serves as a gate and a section (11) that is connected to the source metallization (6). A method for making the trench power semiconductor component is also included.Type: ApplicationFiled: January 28, 2003Publication date: August 28, 2003Inventors: Frank Pfirsch, Carsten Schaffer
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Patent number: 6541818Abstract: A field effect transistor configuration with a trench gate electrode and a method for producing the same. An additional highly doped layer is provided in the body region under the source. The layer is used for influencing the conductibility of the source or the threshold voltage in the channel region. Breakdown currents and latch-up effects can thereby be prevented.Type: GrantFiled: June 18, 2001Date of Patent: April 1, 2003Assignee: Infineon Technologies AGInventors: Frank Pfirsch, Carsten Schäffer
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Publication number: 20020006703Abstract: A field effect transistor configuration with a trench gate electrode and a method for producing the same. An additional highly doped layer is provided in the body region under the source. The layer is used for influencing the conductibility of the source or the threshold voltage in the channel region. Breakdown currents and latch-up effects can thereby be prevented.Type: ApplicationFiled: June 18, 2001Publication date: January 17, 2002Inventors: Frank Pfirsch, Carsten Schaffer