Abstract: The described embodiments relate to features in substrates and methods of forming same. One exemplary embodiment can be a microdevice that includes a substrate extending between a first substrate surface and a generally opposing second substrate surface, and at least one feature formed into the first surface along a bore axis that is not transverse to the first surface.

Abstract: Embodiments of methods, apparatuses, devices, and/or systems for forming an interconnect are described.

Abstract: One embodiment of an electronic component packaging system includes a base adapted for supporting an electronic component, a lid sealed to the base, the lid including a fillport, and the fillport hermetically sealed by light irradiation.

Abstract: A method is provided for depositing a patterning material onto an optically transparent substrate by the use of a laser beam. A solid layer of a patterning material is placed adjacent to a receiving surface of the substrate. A laser beam is directed at an incident angle between 0 and 90° relative to the receiving surface. The laser beam is transmitted through the substrate and onto the solid layer to cause patterning material from the solid layer to deposit onto the receiving surface of the substrate.

Abstract: A wetting zone is defined within a substrate. A conductive material is applied to the wetting zone. A conductive trace is at least partially formed within the wetting zone from the conductive material flowing throughout the wetting zone by wicking action.

Abstract: Embodiments of methods, apparatuses, devices, and/or systems for forming an interconnect are described.

Abstract: Methods to treat an area on a surface to increase affinity for a fluid having a solution of particles including a conductive material.

Abstract: One exemplary embodiment of the present disclosure includes a solution-processed thin film transistor having a number of a number of conductive solution-processed thin film contacts, semiconductor solution-processed thin film active regions, and dielectric solution-processed thin film isolations formed in a sequence and organization to form a solution-processed thin film structure. One or more of the semiconductor solution-processed thin film active regions and the dielectric solution-processed thin film isolations have been selectively ablated.

Abstract: A method for laser patterning of a passive matrix organic light emitting diode device having a multilayered structure comprising a substrate and at least one light emitting organic layer disposed between two electrode layers, the method comprising the step of: irradiating areas of the multilayered structure with a laser beam in a predetermined pattern thereby causing ablation of the multilayered structure in the irradiated areas; wherein, the electrode layers and the light emitting organic layer or layers are patterned substantially simultaneously during the same irradiation operation. Also described are a passive matrix organic light emitting diode device patterned by the method of the present invention and a display comprising the same.

Abstract: A method for marking a polymeric surface includes directing a first laser beam on the surface to form a lightened area on the surface and directing a second laser beam upon the lightened area to form a mark darker than the lightened area.

Abstract: A method for marking a polymeric surface includes directing a first laser beam on the surface to form a lightened area on the surface and directing a second laser beam upon the lightened area to form a mark darker than the lightened area.

Abstract: The described embodiments relate to features in substrates and methods of forming same. One exemplary embodiment can be a microdevice that includes a substrate extending between a first substrate surface and a generally opposing second substrate surface, and at least one feature formed into the first surface along a bore axis that is not transverse to the first surface.

Abstract: An exemplary solution-processed thin film transistor formation method of the invention forms conductive solution-processed thin film material contacts, semiconductor solution-processed thin film material active regions, and dielectric solution-processed thin film material isolations in a sequence and organization to form a solution-processed thin film structure capable of transistor operation. During or after the formation of the transistor structure, laser ablation is applied to one or more of the conductive solution-processed thin film material contacts, the semiconductor solution-processed thin film material active regions and the dielectric solution-processed thin film material isolations to pattern or complete patterning of a material being selectively ablated.