Patents by Inventor Cary Regulski

Cary Regulski has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Polishing slurries for copper and associated materials
    Patent number: 7427567
    Abstract: A chemical mechanical polishing slurry and method for using the slurry for polishing copper, barrier material and dielectric material that includes a first and second slurry. The first slurry has a high removal rate on copper and a low removal rate on barrier material. The second slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first and second slurries can include silica particles, an oxidizing agent, a corrosion inhibitor, and a cleaning agent.
    Type: Grant
    Filed: June 6, 2005
    Date of Patent: September 23, 2008
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Willaim A. Wojtczak, Thomas H. Baum, Long Nguyen, Cary Regulski
  • Chemical mechanical polishing compositions for metal and associated materials and method of using same
    Publication number: 20060160475
    Abstract: A chemical mechanical polishing slurry composition and method for using the slurry composition for polishing copper, barrier material and dielectric material that comprises first and second-step slurries. The first-step slurry has a high removal rate on copper and a low removal rate on barrier material. The second-step slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first slurry comprises at least an organic polymeric abrasive.
    Type: Application
    Filed: March 22, 2006
    Publication date: July 20, 2006
    Inventors: Ying Ma, William Wojtczak, Cary Regulski, Thomas Baum, David Bernhard, Deepak Verma
  • Polishing slurries for copper and associated materials
    Publication number: 20060084272
    Abstract: A chemical mechanical polishing slurry and method for using the slurry for polishing copper, barrier material and dielectric material that includes a first and second slurry. The first slurry has a high removal rate on copper and a low removal rate on barrier material. The second slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first and second slurries can include silica particles, an oxidizing agent, a corrosion inhibitor, and a cleaning agent.
    Type: Application
    Filed: June 6, 2005
    Publication date: April 20, 2006
    Inventors: William Wojtczak, Thomas Baum, Long Nguyen, Cary Regulski
  • Chemical mechanical polishing compositions for metal and associated materials and method of using same
    Patent number: 7029373
    Abstract: A chemical mechanical polishing slurry composition and method for using the slurry composition for polishing copper, barrier material and dielectric material that comprises first and second-step slurries. The first-step slurry has a high removal rate on copper and a low removal rate on barrier material. The second-step slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first slurry comprises at least an organic polymeric abrasive.
    Type: Grant
    Filed: August 14, 2001
    Date of Patent: April 18, 2006
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Ying Ma, William Wojtczak, Cary Regulski, Thomas H. Baum, David D. Bernhard, Deepak Verma
  • Polishing slurries for copper and associated materials
    Patent number: 6936542
    Abstract: A chemical mechanical polishing slurry and method for using the slurry for polishing copper, barrier material and dielectric material that comprises a first and second slurry. The first slurry has a high removal rate on copper and a low removal rate on barrier material. The second slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first and second slurries at least comprise silica particles, an oxidizing agent, a corrosion inhibitor, and a cleaning agent.
    Type: Grant
    Filed: December 18, 2001
    Date of Patent: August 30, 2005
    Assignee: Advanced Technology Materials, Inc.
    Inventors: William A. Wojtczak, Thomas H. Baum, Long Nguyen, Cary Regulski
  • Chemical mechanical polishing compositions for metal and associated materials and method of using same
    Patent number: 6692546
    Abstract: A chemical mechanical polishing slurry composition and method for using the slurry composition for polishing copper, barrier material and dielectric material that comprises first and second-step slurries. The first-step slurry has a high removal rate on copper and a low removal rate on barrier material. The second-step slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first slurry comprises at least an organic polymeric abrasive.
    Type: Grant
    Filed: August 17, 2001
    Date of Patent: February 17, 2004
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Ying Ma, William Wojtczak, Cary Regulski, Thomas H. Baum, David D. Bernhard, Deepak Verma
  • Chemical mechanical polishing compositions for metal and associated materials and method of using same
    Publication number: 20030079416
    Abstract: A chemical mechanical polishing slurry composition and method for using the slurry composition for polishing copper, barrier material and dielectric material that comprises first and second-step slurries. The first-step slurry has a high removal rate on copper and a low removal rate on barrier material. The second-step slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first slurry comprises at least an organic polymeric abrasive.
    Type: Application
    Filed: August 17, 2001
    Publication date: May 1, 2003
    Inventors: Ying Ma, William Wojtczak, Cary Regulski, Thomas H. Baum, David D. Bernhard, Deepak Verma
  • Chemical mechanical polishing compositions for metal and associated materials and method of using same
    Publication number: 20030073386
    Abstract: A chemical mechanical polishing slurry composition and method for using the slurry composition for polishing copper, barrier material and dielectric material that comprises first and second-step slurries. The first-step slurry has a high removal rate on copper and a low removal rate on barrier material. The second-step slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first slurry comprises at least an organic polymeric abrasive.
    Type: Application
    Filed: August 14, 2001
    Publication date: April 17, 2003
    Inventors: Ying Ma, William Wojtczak, Cary Regulski, Thomas H. Baum, David D. Bernhard, Deepak Verma
  • Polishing slurries for copper and associated materials
    Patent number: 6527819
    Abstract: A chemical mechanical polishing slurry and method for using the slurry for polishing copper, barrier material and dielectric material that comprises a first and second slurry. The first slurry has a high removal rate on copper and a low removal rate on barrier material. The second slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first and second slurries at least comprise silica particles, an oxidizing agent, a corrosion inhibitor, and a cleaning agent.
    Type: Grant
    Filed: December 18, 2001
    Date of Patent: March 4, 2003
    Assignee: Advanced Technology Materials, Inc.
    Inventors: William A. Wojtczak, Thomas H. Baum, Long Nguyen, Cary Regulski
  • Polishing slurries for copper and associated materials
    Publication number: 20020124474
    Abstract: A chemical mechanical polishing slurry and method for using the slurry for polishing copper, barrier material and dielectric material that comprises a first and second slurry. The first slurry has a high removal rate on copper and a low removal rate on barrier material. The second slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first and second slurries at least comprise silica particles, an oxidizing agent, a corrosion inhibitor, and a cleaning agent.
    Type: Application
    Filed: December 18, 2001
    Publication date: September 12, 2002
    Inventors: William A. Wojtczak, Thomas H. Baum, Long Nguyen, Cary Regulski
  • Polishing slurries for copper and associated materials
    Publication number: 20020081865
    Abstract: A chemical mechanical polishing slurry and method for using the slurry for polishing copper, barrier material and dielectric material that comprises a first and second slurry. The first slurry has a high removal rate on copper and a low removal rate on barrier material. The second slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first and second slurries at least comprise silica particles, an oxidizing agent, a corrosion inhibitor, and a cleaning agent.
    Type: Application
    Filed: December 18, 2001
    Publication date: June 27, 2002
    Inventors: William A. Wojtczak, Thomas H. Baum, Long Nguyen, Cary Regulski
  • Polishing slurries for copper and associated materials
    Patent number: 6409781
    Abstract: A chemical mechanical polishing slurry and method for using the slurry for polishing copper, barrier material and dielectric material that comprises a first and second slurry. The first slurry has a high removal rate on copper and a low removal rate on barrier material. The second slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first and second slurries at least comprise silica particles, an oxidizing agent, a corrosion inhibitor, and a cleaning agent.
    Type: Grant
    Filed: May 1, 2000
    Date of Patent: June 25, 2002
    Assignee: Advanced Technology Materials, Inc.
    Inventors: William A. Wojtczak, Thomas H. Baum, Long Nguyen, Cary Regulski