Abstract: The semiconductor device includes a chip which has a main surface, a first region of a first conductivity type which is formed in a surface layer portion of the main surface, a second region of a second conductivity type which is formed in a surface layer portion of the first region, a trench separation structure which penetrates through the second region, surrounds an interior of the second region, and demarcates an inner region at an inner side of the second region and an outer region at an outer side of the second region in the main surface, a trench gate structure which is formed in the inner region, an inner diode which includes the first region and the second region that are positioned in the inner region, and an outer diode which includes the first region and the second region that are positioned in the outer region.