Abstract: Systems for switching a displayed signal for a display between a plurality of signals are disclosed. In one embodiment, the system includes a microcontroller; a chooser for choosing a primary signal from a plurality of program-variable signals at the microcontroller; a monitor tuner coupled to the microcontroller for tuning the primary signal during switching of the displayed signal from the primary signal to a secondary signal; a detector coupled to the monitor tuner and the microcontroller for detecting a predetermined condition in the primary signal; and a selector coupled to the microcontroller for switching the displayed signal from the secondary signal to the primary signal upon occurrence of the predetermined condition. A user can switch between signals such as television channels or other dedicated functions without the risk of missing a portion of the program material.

Abstract: A semiconductor wafer structure. The structure comprises a plurality of semiconductor wafers. The plurality of semiconductor wafers comprises a first semiconductor wafer and a second semiconductor wafer. The first semiconductor wafer is located adjacent to the second semiconductor wafer such that no additional wafers of the plurality of semiconductor wafers is located between a topside of the first semiconductor wafer and a backside of the of the second semiconductor wafer. A relationship is provided between a plurality of values for an electrical characteristic and a plurality of materials. A substructure is formed comprising a material from the plurality of materials existing in the relationship sandwiched between a topside of the first semiconductor wafer and a backside of the of the second semiconductor wafer. The first semiconductor wafer comprises a discrete value from the plurality of values for the electrical characteristic that correlates with the material in said relationship.

Abstract: A method and structure for fabricating semiconductor wafers. The method comprises providing a plurality of semiconductor wafers. The plurality of semiconductor wafers comprises a first semiconductor wafer and a second semiconductor wafer. The first semiconductor wafer is located adjacent to the second semiconductor wafer. A relationship is provided between a plurality of values for an electrical characteristic and a plurality of materials. A material is chosen from the plurality of materials existing in the relationship. A substructure is formed comprising the material sandwiched between a topside of the first semiconductor wafer and a backside of a portion of the of the second semiconductor wafer. The plurality of semiconductor wafers are placed into a furnace comprising an elevated temperature for processing resulting in a value for the first semiconductor wafer of the electrical characteristic that corresponds to said material in said relationship.