Abstract: Methods and apparatuses suitable for encapsulation layers for memory devices at temperatures less than about 300° C. are provided herein. Methods involve introducing a reactive species by pulsing plasma while exposing a substrate to deposition reactants, and post-treating deposited encapsulation films to densify and reduce hydrogen content. Post-treatment methods include periodic exposure to inert plasma without reactants and exposure to ultraviolet radiation at a substrate temperature less than about 300° C.

Abstract: Methods and apparatuses suitable for depositing low hydrogen content, hermetic, thin encapsulation layers at temperatures less than about 300° C. are provided herein. Methods involve pulsing plasma while exposing a substrate to deposition reactants, and post-treating deposited encapsulation films to densify and reduce hydrogen content. Post-treatment methods include periodic exposure to inert plasma without reactants and exposure to ultraviolet radiation at a substrate temperature less than about 300° C.

Abstract: Methods and apparatuses suitable for depositing low hydrogen content, hermetic, thin encapsulation layers at temperatures less than about 300° C. are provided herein. Methods involve pulsing plasma while exposing a substrate to deposition reactants, and post-treating deposited encapsulation films to densify and reduce hydrogen content. Post-treatment methods include periodic exposure to inert plasma without reactants and exposure to ultraviolet radiation at a substrate temperature less than about 300° C.

Abstract: Methods and apparatuses suitable for depositing low hydrogen content, hermetic, thin encapsulation layers at temperatures less than about 300° C. are provided herein. Methods involve pulsing plasma while exposing a substrate to deposition reactants, and post-treating deposited encapsulation films to densify and reduce hydrogen content. Post-treatment methods include periodic exposure to inert plasma without reactants and exposure to ultraviolet radiation at a substrate temperature less than about 300° C.

Abstract: Apparatuses and methods for cleaning a semiconductor processing chamber is provided. The semiconductor processing chamber may include a UV radiation source, a substrate holder, and a UV transmissive window. The UV transmissive window may include one or multiple panes. One or more panes of the UV transmissive window may be non-reactive with fluorine containing chemistries. In multi-pane windows a purge gas flow path may be formed in the gap between windows. A purge gas may be flowed through the purge gas flow path to prevent process gases used in the chamber interior from reaching one or more panes of the UV transmissive window.

Abstract: Methods and apparatuses suitable for depositing low hydrogen content, hermetic, thin encapsulation layers at temperatures less than about 300° C. are provided herein. Methods involve pulsing plasma while exposing a substrate to deposition reactants, and post-treating deposited encapsulation films to densify and reduce hydrogen content. Post-treatment methods include periodic exposure to inert plasma without reactants and exposure to ultraviolet radiation at a substrate temperature less than about 300° C.

Abstract: An injection-molded plastic bucket with a base, a substantially circumferential wall expanding conically upward to an upper edge, and a pouring handle, where a lower edge of the wall is provided with a recess for the pouring handle, and a process for manufacturing an injection-molded plastic bucket. The bucket design is such the mold costs and curing time can be reduced and of which the universal utility of the molds can be improved, this task being solved in that the plastic bucket is molded in one piece, where the pouring handle is of substantially the same thickness as the bucket wall, and is integrally formed with the bucket body.

Abstract: Methods and apparatuses suitable for depositing low hydrogen content, hermetic, thin encapsulation layers at temperatures less than about 300° C. are provided herein. Methods involve pulsing plasma while exposing a substrate to deposition reactants, and post-treating deposited encapsulation films to densify and reduce hydrogen content. Post-treatment methods include periodic exposure to inert plasma without reactants and exposure to ultraviolet radiation at a substrate temperature less than about 300° C.

Abstract: Apparatuses and methods for cleaning a semiconductor processing chamber is provided. The semiconductor processing chamber may include a UV radiation source, a substrate holder, and a UV transmissive window. The UV transmissive window may include one or multiple panes. One or more panes of the UV transmissive window may be non-reactive with fluorine containing chemistries. In multi-pane windows a purge gas flow path may be formed in the gap between windows. A purge gas may be flowed through the purge gas flow path to prevent process gases used in the chamber interior from reaching one or more panes of the UV transmissive window.

Abstract: Various embodiments herein relate to methods and apparatus for preparing a low-k dielectric material on a semiconductor substrate. The dielectric material may include porogens distributed throughout a structural matrix. A reactive ultraviolet thermal processing operation is performed to promote removal of the porogens from the dielectric material. By flowing a weak oxidizer such as carbon dioxide into the reaction chamber during UV exposure, the rate at which the porogens are removed can be enhanced in a controllable manner.

Abstract: A recessed fixture cover device comprising a plurality of components that may be economically and efficiently packed in an unassembled state for transport and/or shipping and then easily assembled to provide a thermal barrier, a fire barrier, an air barrier, a moisture barrier, and/or an insect intrusion barrier between the recessed fixture and the space immediately above and external to the installed cover device. An embodiment of a cover device may comprise two components that may be assembled to form a right-angled parallelepiped shape that lacks a bottom wall thereby allowing the cover device to be lowered onto and enclose a recessed fixture. One or more complimentary connections between abutting edges of the two components allow the two components to be either quickly assembled for use or disassembled for transport or storage thereby providing a benefit to both construction professionals and do-it-yourself property owners.

Abstract: An injection-molded plastic bucket with a base, a substantially circumferential wall expanding conically upward to an upper edge, and a pouring handle, where a lower edge of the wall is provided with a recess for the pouring handle, and a process for manufacturing an injection-molded plastic bucket. The bucket design is such the mold costs and curing time can be reduced and of which the universal utility of the molds can be improved, this task being solved in that the plastic bucket is molded in one piece, where the pouring handle is of substantially the same thickness as the bucket wall, and is integrally formed with the bucket body.

Abstract: A recessed fixture cover device comprising a plurality of components that may be economically and efficiently packed in an unassembled state for transport and/or shipping and then easily assembled to provide a thermal barrier, a fire barrier, an air barrier, a moisture barrier, and/or an insect intrusion barrier between the recessed fixture and the space immediately above and external to the installed cover device. An embodiment of a cover device may comprise two components that may be assembled to form a right-angled parallelepiped shape that lacks a bottom wall thereby allowing the cover device to be lowered onto and enclose a recessed fixture. One or more complimentary connections between abutting edges of the two components allow the two components to be either quickly assembled for use or disassembled for transport or storage thereby providing a benefit to both construction professionals and do-it-yourself property owners.