Patents by Inventor Casey O. Holder

Casey O. Holder has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for the reuse of gallium nitride epitaxial substrates
    Patent number: 9773704
    Abstract: A method for the reuse of gallium nitride (GaN) epitaxial substrates uses band-gap-selective photoelectrochemical (PEC) etching to remove one or more epitaxial layers from bulk or free-standing GaN substrates without damaging the substrate, allowing the substrate to be reused for further growth of additional epitaxial layers. The method facilitates a significant cost reduction in device production by permitting the reuse of expensive bulk or free-standing GaN substrates.
    Type: Grant
    Filed: June 22, 2016
    Date of Patent: September 26, 2017
    Assignee: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Casey O. Holder, Daniel F. Feezell, Steven P. DenBaars, Shuji Nakamura
  • Structure and method for the fabrication of a gallium nitride vertical cavity surface emitting laser
    Patent number: 9640947
    Abstract: A III-Nitride based Vertical Cavity Surface Emitting Laser (VCSEL), wherein a cavity length of the VCSEL is controlled by etching.
    Type: Grant
    Filed: August 6, 2015
    Date of Patent: May 2, 2017
    Assignee: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Casey O. Holder, Daniel F. Feezell, Steven P. DenBaars, James S. Speck, Shuji Nakamura
  • METHOD FOR THE REUSE OF GALLIUM NITRIDE EPITAXIAL SUBSTRATES
    Publication number: 20160307801
    Abstract: A method for the reuse of gallium nitride (GaN) epitaxial substrates uses band-gap-selective photoelectrochemical (PEC) etching to remove one or more epitaxial layers from bulk or free-standing GaN substrates without damaging the substrate, allowing the substrate to be reused for further growth of additional epitaxial layers. The method facilitates a significant cost reduction in device production by permitting the reuse of expensive bulk or free-standing GaN substrates.
    Type: Application
    Filed: June 22, 2016
    Publication date: October 20, 2016
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Casey O. Holder, Daniel F. Feezell, Steven P. DenBaars, Shuji Nakamura
  • Method for the reuse of gallium nitride epitaxial substrates
    Patent number: 9396943
    Abstract: A method for the reuse of gallium nitride (GaN) epitaxial substrates uses band-gap-selective photoelectrochemical (PEC) etching to remove one or more epitaxial layers from bulk or free-standing GaN substrates without damaging the substrate, allowing the substrate to be reused for further growth of additional epitaxial layers. The method facilitates a significant cost reduction in device production by permitting the reuse of expensive bulk or free-standing GaN substrates.
    Type: Grant
    Filed: August 28, 2015
    Date of Patent: July 19, 2016
    Assignee: The Regents of the University of California
    Inventors: Casey O. Holder, Daniel F. Feezell, Steven P. DenBaars, Shuji Nakamura
  • STRUCTURE AND METHOD FOR THE FABRICATION OF A GALLIUM NITRIDE VERTICAL CAVITY SURFACE EMITTING LASER
    Publication number: 20160156155
    Abstract: A III-Nitride based Vertical Cavity Surface Emitting Laser (VCSEL), wherein a cavity length of the VCSEL is controlled by etching.
    Type: Application
    Filed: August 6, 2015
    Publication date: June 2, 2016
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Casey O. Holder, Daniel F. Feezell, Steven P. DenBaars, James S. Speck, Shuji Nakamura
  • METHOD FOR THE REUSE OF GALLIUM NITRIDE EPITAXIAL SUBSTRATES
    Publication number: 20150371849
    Abstract: A method for the reuse of gallium nitride (GaN) epitaxial substrates uses band-gap-selective photoelectrochemical (PEC) etching to remove one or more epitaxial layers from bulk or free-standing GaN substrates without damaging the substrate, allowing the substrate to be reused for further growth of additional epitaxial layers. The method facilitates a significant cost reduction in device production by permitting the reuse of expensive bulk or free-standing GaN substrates.
    Type: Application
    Filed: August 28, 2015
    Publication date: December 24, 2015
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Casey O. Holder, Daniel F. Feezell, Steven P. DenBaars, Shuji Nakamura
  • Method for the reuse of gallium nitride epitaxial substrates
    Patent number: 9147733
    Abstract: A method for the reuse of gallium nitride (GaN) epitaxial substrates uses band-gap-selective photoelectrochemical (PEC) etching to remove one or more epitaxial layers from bulk or free-standing GaN substrates without damaging the substrate, allowing the substrate to be reused for further growth of additional epitaxial layers. The method facilitates a significant cost reduction in device production by permitting the reuse of expensive bulk or free-standing GaN substrates.
    Type: Grant
    Filed: September 22, 2014
    Date of Patent: September 29, 2015
    Assignee: The Regents of the University of California
    Inventors: Casey O. Holder, Daniel F. Feezell, Steven P. DenBaars, Shuji Nakamura
  • Structure and method for the fabrication of a gallium nitride vertical cavity surface emitting laser
    Patent number: 9136673
    Abstract: A III-Nitride based Vertical Cavity Surface Emitting Laser (VCSEL), wherein a cavity length of the VCSEL is controlled by etching.
    Type: Grant
    Filed: July 22, 2013
    Date of Patent: September 15, 2015
    Assignee: The Regents of the University of California
    Inventors: Casey O. Holder, Daniel F. Feezell, Steven P. DenBaars, James S. Speck, Shuji Nakamura
  • METHOD FOR THE REUSE OF GALLIUM NITRIDE EPITAXIAL SUBSTRATES
    Publication number: 20150048381
    Abstract: A method for the reuse of gallium nitride (GaN) epitaxial substrates uses band-gap-selective photoelectrochemical (PEC) etching to remove one or more epitaxial layers from bulk or free-standing GaN substrates without damaging the substrate, allowing the substrate to be reused for further growth of additional epitaxial layers. The method facilitates a significant cost reduction in device production by permitting the reuse of expensive bulk or free-standing GaN substrates.
    Type: Application
    Filed: September 22, 2014
    Publication date: February 19, 2015
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Casey O. Holder, Daniel F. Feezell, Steven P. DenBaars, Shuji Nakamura
  • Method for the reuse of gallium nitride epitaxial substrates
    Patent number: 8866149
    Abstract: A method for the reuse of gallium nitride (GaN) epitaxial substrates uses band-gap-selective photoelectrochemical (PEC) etching to remove one or more epitaxial layers from bulk or free-standing GaN substrates without damaging the substrate, allowing the substrate to be reused for further growth of additional epitaxial layers. The method facilitates a significant cost reduction in device production by permitting the reuse of expensive bulk or free-standing GaN substrates.
    Type: Grant
    Filed: February 14, 2013
    Date of Patent: October 21, 2014
    Assignee: The Regents of the University of California
    Inventors: Casey O. Holder, Daniel F. Feezell, Steven P. DenBaars, Shuji Nakamura
  • STRUCTURE AND METHOD FOR THE FABRICATION OF A GALLIUM NITRIDE VERTICAL CAVITY SURFACE EMITTING LASER
    Publication number: 20140023102
    Abstract: A III-Nitride based Vertical Cavity Surface Emitting Laser (VCSEL), wherein a cavity length of the VCSEL is controlled by etching.
    Type: Application
    Filed: July 22, 2013
    Publication date: January 23, 2014
    Inventors: Casey O. Holder, Daniel F. Feezell, Steven P. DenBaars, James S. Speck, Shuji Nakamura