Abstract: In an embodiment, a semiconductor package includes a support and a stack of two or more semiconductor dies, the stack including an upper die and further including a lower die attached to the support by adhesive on a backside of the lower die, wherein the adhesive covers only part of the backside of the lower die, and wherein the adhesive has a plurality of non-contiguous regions on the backside of the lower die.

Abstract: A die attachment to a support is disclosed. In an embodiment, a semiconductor package includes a support and a die attached to the support by an adhesive on a backside of the die, wherein the die includes a capacitive pressure sensor integrated on a CMOS read-out circuit, and wherein the adhesive covers only a part of the backside of the die.

Abstract: A sensor arrangement and a method of operating a sensor arrangement are disclosed. In an embodiment, a sensor arrangement includes a pressure sensor realized as a capacitive pressure sensor, a capacitance-to-digital converter, a test circuit and a switching circuit coupling the capacitance-to-digital converter and the test circuit to the pressure sensor.

Abstract: In an embodiment a system includes a sensor including a base having a base electrode and a first membrane suspended above the base, wherein the first membrane has a first membrane electrode, wherein the first membrane is configured to deflect with respect to the base electrode in response to an environmental condition, and wherein the sensor is configured to measure a capacitance between the base electrode and the first membrane electrode. The system further includes a first device of the system configured to generate electrical interference signals, a first electrically conductive shield layer positioned between the sensor and the first device of the system, wherein the first electrically conductive shield layer defines a plurality of first apertures extending through the first electrically conductive shield layer and a dielectric material disposed in the plurality of first apertures.

Abstract: In an embodiment a sensor arrangement includes a sensor die having a contact area, a suspended area and a sensitive element located in the suspended area, an interposer including at least two vias connecting a first side of the interposer to a second side of the interposer and a support mechanically and electrically connecting the contact area of the sensor die to the first side of the interposer, the support including at least two contact joints.

Abstract: In an embodiment, a semiconductor device includes a substrate body, an environmental sensor, a cap body and a volume of gas, wherein the environmental sensor and the volume of gas are arranged between the substrate body and the cap body in a vertical direction which is perpendicular to a main plane of extension of the substrate body, wherein at least one channel between the substrate body and the cap body connects the volume of gas with an environment of the semiconductor device such that the channel is permeable for gases, and wherein a thickness of the substrate body amounts to at least 80% of a thickness of the cap body and at most 120% of the thickness of the cap body.

Abstract: Capacitive pressure sensors and other devices are disclosed. In an embodiment a semiconductor device includes a first electrode, a cavity over the first electrode and a second electrode including a suspended membrane over the cavity and electrically conductive anchor trenches laterally surrounding the cavity, wherein the anchor trenches include an inner anchor trench and an outer anchor trench, the outer anchor trench having rounded corners.

Abstract: An integrated temperature sensor comprises a chip package enclosing an integrated circuit and an ultrasonic transceiver which is integrated on top of the integrated circuit. The ultrasonic transceiver comprises a transmitting element which is arranged for emitting ultrasound waves, and a receiving element which is arranged for receiving ultrasound waves. The chip package comprises at least one barrier arranged at a defined position in the chip package. The barrier is designed to at least partly reflect ultrasound waves emitted by the transmitting element towards the receiving element. The integrated circuit comprises an actuator element to actuate the transmitting element to emit ultrasound waves according to a first signal s(t), and a converter element to convert an ultrasound wave, received by the receiving element, into a second signal y(t).

Abstract: A sensor package and a method for producing a sensor package are disclosed. In an embodiment a method for producing a sensor package includes providing a carrier including electric conductors, fastening a dummy die or interposer to the carrier, providing an ASIC device including an integrated sensor element and fastening the ASIC device to the dummy die or interposer.

Abstract: A sensor arrangement and a method of operating a sensor arrangement are disclosed. In an embodiment, a sensor arrangement includes a pressure sensor realized as a capacitive pressure sensor, a capacitance-to-digital converter, a test circuit and a switching circuit coupling the capacitance-to-digital converter and the test circuit to the pressure sensor.

Abstract: In an embodiment a system includes a sensor including a base having a base electrode and a first membrane suspended above the base, wherein the first membrane has a first membrane electrode, wherein the first membrane is configured to deflect with respect to the base electrode in response to an environmental condition, and wherein the sensor is configured to measure a capacitance between the base electrode and the first membrane electrode. The system further includes a first device of the system configured to generate electrical interference signals, a first electrically conductive shield layer positioned between the sensor and the first device of the system, wherein the first electrically conductive shield layer defines a plurality of first apertures extending through the first electrically conductive shield layer and a dielectric material disposed in the plurality of first apertures.

Abstract: The sensor package comprises a carrier (1) including electric conductors (13), an ASIC device (6) and a sensor element (7), which is integrated in the ASIC device (6). A dummy die or interposer (4) is arranged between the carrier (1) and the ASIC device (6). The dummy die or interposer (4) is fastened to the carrier (1), and the ASIC device (6) is fastened to the dummy die or interposer (4).

Abstract: A die attachment to a support is disclosed. In an embodiment, a semiconductor package includes a support and a die attached to the support by an adhesive on a backside of the die, wherein the die includes a capacitive pressure sensor integrated on a CMOS read-out circuit, and wherein the adhesive covers only a part of the backside of the die.

Abstract: Capacitive pressure sensors and other devices are disclosed. In an embodiment a semiconductor device includes a first electrode, a cavity over the first electrode and a second electrode including a suspended membrane over the cavity and electrically conductive anchor trenches laterally surrounding the cavity, wherein the anchor trenches include an inner anchor trench and an outer anchor trench, the outer anchor trench having rounded corners.

Abstract: The sensor package comprises a carrier (1) including electric conductors (13), an ASIC device (6) and a sensor element (7), which is integrated in the ASIC device (6). A dummy die or interposer (4) is arranged between the carrier (1) and the ASIC device (6). The dummy die or interposer (4) is fastened to the carrier (1), and the ASIC device (6) is fastened to the dummy die or interposer (4).

Abstract: In an embodiment, a method for calibrating a pressure sensor device is disclosed. The method involves determining the resonant frequency of a membrane of the pressure sensor device after the pressure sensor device has been attached to a circuit board, calculating a change in the resonant frequency from a resonant frequency stored in memory, calculating strain of the membrane of the pressure sensor device from the change in resonant frequency, and calibrating the pressure sensor device based on a capacitance-to-pressure curve calculated using the strain of the membrane of the pressure sensor device.

Abstract: A semiconductor device comprises a substrate body, an environmental sensor, a cap body and a volume of gas. The environmental sensor and the volume of gas are arranged between the substrate body and the cap body in a vertical direction which is perpendicular to the main plane of extension of the substrate body, and at least one channel between the substrate body and the cap body connects the volume of gas with the environment of the semiconductor device such that the channel is permeable for gases.

Abstract: An integrated temperature sensor comprises a chip package enclosing an integrated circuit and an ultrasonic transceiver which is integrated on top of the integrated circuit. The ultrasonic transceiver comprises a transmitting element which is arranged for emitting ultrasound waves, and a receiving element which is arranged for receiving ultrasound waves. The chip package comprises at least one barrier arranged at a defined position in the chip package. The barrier is designed to at least partly reflect ultrasound waves emitted by the transmitting element towards the receiving element. The integrated circuit comprises an actuator element to actuate the transmitting element to emit ultrasound waves according to a first signal s(t), and a converter element to convert an ultrasound wave, received by the receiving element, into a second signal y(t).

Abstract: Consistent with an example embodiment, a user (touch screen) interface has haptic feedback. The user interface comprises, a substrate, a transparent bottom electrode on top of the substrate, a transparent wrinkling layer on top of the transparent bottom electrode, a transparent top electrode on top of the transparent wrinkling layer; and a transparent protective surface on top of the transparent top electrode. The transparent wrinkling layer changes from a smooth surface to a roughened surface upon application of a voltage between the top electrode and the bottom electrode; the voltage generates an electrostatic force mutually attracting the top and bottom electrodes to exert a compressive force upon the transparent wrinkling layer sufficient to generate a degree of surface wrinkling that is perceptible to the touch.

Abstract: A bulk-acoustic-mode MEMS resonator has a first portion with a first physical layout, and a layout modification feature. The resonant frequency is a function of the physical layout, which is designed such that the frequency variation is less than 150 ppm for a variation in edge position of the resonator shape edges of 50 nm. This design combines at least two different layout features in such a way that small edge position variations (resulting from uncontrollable process variation) have negligible effect on the resonant frequency.