Abstract: The present invention concerns a device and process for capturing CO2 from air. The device comprises (a) a membrane at least partly permeable for air comprising a solid state CO2 sorbent; (b) at least one sorption chamber; (c) at least one regeneration chamber; (d) means for transporting the membrane from the sorption chamber to the regeneration chamber and back; (e) an inlet for receiving air located on one end of the membrane and an outlet for discharging air depleted in CO2 located on the other end of the membrane in the sorption chamber, wherein the device is configured to allow air to flow from the inlet to the outlet through the membrane; (f) means for flowing stripping gas through the membrane into the regeneration chamber; (g) at least one outlet for discharging CO2, located in the regeneration chamber; and (h) heating means for heating the regeneration chamber. The device according to the invention provides an efficient and low-cost solution for capturing CO2 directly from air.

Abstract: A silicon nitride thin film formation apparatus is provided for stationary and moving substrates and a process for forming such films. The process provides high uniformity of film thickness and film properties as well as a high deposition rate. The film properties are adequate for application as an antireflection layer or passivation layer in solar cell devices or as dielectric layer in thin film transistors. The apparatus includes a number of metal filaments. In the space within the formation apparatus opposite to the substrate with respect to the filaments, a gas dosage system is arranged at a predetermined distance of the filaments. The film formation apparatus for stationary substrates also contains a shutter to control the starting and ending conditions for film formation and to control the film thickness.

Abstract: A silicon nitride thin film formation apparatus is provided for stationary and moving substrates and a process for forming such films. The process provides high uniformity of film thickness and film properties as well as a high deposition rate. The film properties are adequate for application as an antireflection layer or passivation layer in solar cell devices or as dielectric layer in thin film transistors. The apparatus includes a number of metal filaments. In the space within the formation apparatus opposite to the substrate with respect to the filaments, a gas dosage system is arranged at a predetermined distance of the filaments. The film formation apparatus for stationary substrates also contains a shutter to control the starting and ending conditions for film formation and to control the film thickness.