Patents by Inventor Catherine Anne Dubourdieu

Catherine Anne Dubourdieu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • ENGINEERING MULTIPLE THRESHOLD VOLTAGES IN AN INTEGRATED CIRCUIT
    Publication number: 20150214323
    Abstract: An integrated circuit and method for forming an integrated circuit. There are at least three field-effect transistors with at least two of the field-effect transistors having the same electrically insulating material which is ferroelectric when unstrained or is capable of being ferroelectric when strain is induced. It is optional for the third field-effect transistor to have an electrically insulating material which is ferroelectric when unstrained or is capable of being ferroelectric when strain is induced. The at least three field-effect transistors are strained to varying amounts so that each of the three field-effect transistors has a threshold voltage, Vt, which is different from the Vt of the two other field-effect transistors.
    Type: Application
    Filed: April 8, 2015
    Publication date: July 30, 2015
    Inventors: Catherine Anne Dubourdieu, Martin Michael Frank, Vijay Narayanan
  • Engineering multiple threshold voltages in an integrated circuit
    Patent number: 9041082
    Abstract: An integrated circuit and method for forming an integrated circuit. There are at least three field-effect transistors with at least two of the field-effect transistors having the same electrically insulating material which is ferroelectric when unstrained or is capable of being ferroelectric when strain is induced. It is optional for the third field-effect transistor to have an electrically insulating material which is ferroelectric when unstrained or is capable of being ferroelectric when strain is induced. The at least three field-effect transistors are strained to varying amounts so that each of the three field-effect transistors has a threshold voltage, Vt, which is different from the Vt of the two other field-effect transistors.
    Type: Grant
    Filed: October 7, 2010
    Date of Patent: May 26, 2015
    Assignees: International Business Machines Corporation, Centre National de la Recherche Scientifique
    Inventors: Catherine Anne Dubourdieu, Martin Michael Frank, Vijay Narayanan
  • ENGINEERING MULTIPLE THRESHOLD VOLTAGES IN AN INTEGRATED CIRCUIT
    Publication number: 20120086059
    Abstract: An integrated circuit and method for forming an integrated circuit. There are at least three field-effect transistors with at least two of the field-effect transistors having the same electrically insulating material which is ferroelectric when unstrained or is capable of being ferroelectric when strain is induced. It is optional for the third field-effect transistor to have an electrically insulating material which is ferroelectric when unstrained or is capable of being ferroelectric when strain is induced. The at least three field-effect transistors are strained to varying amounts so that each of the three field-effect transistors has a threshold voltage, Vt, which is different from the Vt of the two other field-effect transistors.
    Type: Application
    Filed: October 7, 2010
    Publication date: April 12, 2012
    Applicants: Centre National de la Recherche Scientifique, International Business Machines Corporation
    Inventors: Catherine Anne Dubourdieu, Martin Michael Frank, Vijay Narayanan