Patents by Inventor Catherine Caneau

Catherine Caneau has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20060056475
    Abstract: A method of fabricating an indium phosphide-based vertical cavity surface emitting laser (VCSEL) having a high reflectivity distributed Bragg reflector (DBR) that is particularly adapted for emitting a light having a center wavelength of around 1.30 micrometers. The method includes the steps of selecting a specific operating wavelength, determining the photon energy corresponding to the selected operating wavelength, selecting a maximum operating temperature in degrees Centigrade, and fabricating at least half of the high index layers of the distributed Bragg reflector (DBR) of the VCSEL from AlGaInAs or other material that can be epitaxially grown on the InP substrate to have a band gap equal to or greater than the sum of the photon energy (in milli-electron volts) plus the sum of the maximum operating temperature plus 110 divided by 1.96.
    Type: Application
    Filed: September 16, 2004
    Publication date: March 16, 2006
    Inventors: Catherine Caneau, Benjamin Hall, Nobuhiko Nishiyama, Chung-En Zah
  • Publication number: 20050253222
    Abstract: A semiconductor device (100) includes a misoriented substrate (240) having a surface area inclined in a range of about 8 to 40 degrees from the {100} plane. At least one highly doped P-type semiconductor layer (106) of a first semiconductor material doped with Carbon (C) is grown over the surface area. At least one highly doped N-type semiconductor layer (104) of a second semiconductor material is grown over the surface area and near the at least one highly doped P-type semiconductor layer (106). A moderately doped P-type layer (60) is grown over the surface area, wherein the moderately doped P-type layer 60 has a third semiconductor material doped with a dopant selected as a member from the group consisting of Zn, Be, Cd and Mg. The devices 100 include VCSELs having tunnel junctions (110) and semiconductor DBRs (230) composed of AlGaInAs/InP or GaInAs/InP layers (2308/2302) on misoriented substrates 240.
    Type: Application
    Filed: November 24, 2004
    Publication date: November 17, 2005
    Inventors: Catherine Caneau, Georgiy Guryanov, Nobuhiko Nishiyama
  • Patent number: 5796902
    Abstract: A waveguide having alternating regions of different crystallographic orientations, thereby providing quasi-phase-matching for a non-linear frequency conversion, in which two wafers with or without epitaxial layers thereon are bonded together having different, preferably opposed, crystallographic orientations. One wafer is etched away, and a grating is etched such that one part of the grating has the orientation of one wafer and the other part has the orientation of the other wafer. Thereafter, a waveguide structure is epitaxially deposited upon the differentially oriented template so that the waveguide is differentially oriented in its axial direction. Thereby, quasi-phase-matching non-linear effects can be achieved. Several important devices can thereby be achieved, including a coherent optical source using frequency doubling and a frequency converter useful in wavelength division multiplexed communication, as well as others.
    Type: Grant
    Filed: July 5, 1996
    Date of Patent: August 18, 1998
    Assignee: Bell Communications Research, Inc.
    Inventors: Rajaram Bhat, Catherine Caneau, Mark A. Koza, Sung Joo Yoo