Abstract: A method of fabricating an indium phosphide-based vertical cavity surface emitting laser (VCSEL) having a high reflectivity distributed Bragg reflector (DBR) that is particularly adapted for emitting a light having a center wavelength of around 1.30 micrometers. The method includes the steps of selecting a specific operating wavelength, determining the photon energy corresponding to the selected operating wavelength, selecting a maximum operating temperature in degrees Centigrade, and fabricating at least half of the high index layers of the distributed Bragg reflector (DBR) of the VCSEL from AlGaInAs or other material that can be epitaxially grown on the InP substrate to have a band gap equal to or greater than the sum of the photon energy (in milli-electron volts) plus the sum of the maximum operating temperature plus 110 divided by 1.96.

Abstract: A semiconductor device (100) includes a misoriented substrate (240) having a surface area inclined in a range of about 8 to 40 degrees from the {100} plane. At least one highly doped P-type semiconductor layer (106) of a first semiconductor material doped with Carbon (C) is grown over the surface area. At least one highly doped N-type semiconductor layer (104) of a second semiconductor material is grown over the surface area and near the at least one highly doped P-type semiconductor layer (106). A moderately doped P-type layer (60) is grown over the surface area, wherein the moderately doped P-type layer 60 has a third semiconductor material doped with a dopant selected as a member from the group consisting of Zn, Be, Cd and Mg. The devices 100 include VCSELs having tunnel junctions (110) and semiconductor DBRs (230) composed of AlGaInAs/InP or GaInAs/InP layers (2308/2302) on misoriented substrates 240.

Abstract: A waveguide having alternating regions of different crystallographic orientations, thereby providing quasi-phase-matching for a non-linear frequency conversion, in which two wafers with or without epitaxial layers thereon are bonded together having different, preferably opposed, crystallographic orientations. One wafer is etched away, and a grating is etched such that one part of the grating has the orientation of one wafer and the other part has the orientation of the other wafer. Thereafter, a waveguide structure is epitaxially deposited upon the differentially oriented template so that the waveguide is differentially oriented in its axial direction. Thereby, quasi-phase-matching non-linear effects can be achieved. Several important devices can thereby be achieved, including a coherent optical source using frequency doubling and a frequency converter useful in wavelength division multiplexed communication, as well as others.