Abstract: The invention concerns a material evaporation chamber including a vacuum chamber (10), a first pumping unit (13) to pump said chamber and sources of material. According to the invention, a wall (23) liable to provide total or partial vacuum tightness, delineates within this chamber a first volume (25) and a second volume (22). Certain sources of material (17) having a main axis (18) are placed in the second volume (22). This second volume (22) is pumped by a second pumping unit (24). The wall (23) includes recesses (26) which are each centered on the main axis (18) of one of the sources of material (17). The evaporation chamber also comprises means (27) for plugging or clearing each of said recesses (26), said means (27) being controlled individually to protect the sources of material (17) having a main axis (18) unused.

Abstract: Disclosed is an apparatus for depositing a thin film of material on a substrate and a regeneration process. The apparatus includes a chamber, a cryogenic panel disposed inside the chamber, a sample holder able to support a substrate, a gas injector able to inject a gaseous precursor into the chamber, a first trap connected to the vacuum chamber and able to trap a part of the gaseous precursor released by the cryogenic panel, the first trap having a fixed pumping capacity S1. The apparatus for depositing a thin film of material on a substrate includes a second trap having a variable pumping capacity S2 able to be regulated in function of the gaseous precursor partial pressure, the first and second trap providing a total pumping capacity S=S1+S2 sufficient to maintain the gaseous precursor partial pressure in the vacuum chamber under a determined pressure PL.

Abstract: Disclosed is an apparatus for depositing a thin film of material on a substrate and a regeneration process. The apparatus includes a chamber, a cryogenic panel disposed inside the chamber, a sample holder able to support a substrate, a gas injector able to inject a gaseous precursor into the chamber, a first trap connected to the vacuum chamber and able to trap a part of the gaseous precursor released by the cryogenic panel, the first trap having a fixed pumping capacity S1. The apparatus for depositing a thin film of material on a substrate includes a second trap having a variable pumping capacity S2 able to be regulated in function of the gaseous precursor partial pressure, the first and second trap providing a total pumping capacity S=S1+S2 sufficient to maintain the gaseous precursor partial pressure in the vacuum chamber under a determined pressure PL.

Abstract: A molecular beam epitaxy apparatus for producing wafers of semiconductor material includes a growth chamber surrounding a process area, a main cryogenic panel having a lateral part covering the inner surface of the lateral wall of the growth chamber, a sample holder, at least one effusion cell able to evaporate a material, a gas injector to inject a gaseous precursor into the growth chamber, a pumping element connected to the growth chamber to provide high vacuum capability. The apparatus includes an insulation enclosure covering at least the inner surfaces of the growth chamber walls, the insulation enclosure including cold parts having a temperature Tmin?melting point of the gaseous precursor, and hot parts having a temperature Tmin?a temperature wherein the desorption rate of the gaseous precursor on the hot parts is at least 1000 times greater than the adsorption rate of the gaseous precursor.

Abstract: The invention concerns a material evaporation chamber including a vacuum chamber (10), a first pumping unit (13) to pump said chamber and sources of material. According to the invention, a wall (23) liable to provide total or partial vacuum tightness, delineates within this chamber a first volume (25) and a second volume (22). Certain sources of material (17) having a main axis (18) are placed in the second volume (22). This second volume (22) is pumped by a second pumping unit (24). The wall (23) includes recesses (26) which are each centred on the main axis (18) of one of the sources of material (17). The evaporation chamber also comprises means (27) for plugging or clearing each of said recesses (26), said means (27) being controlled individually to protect the sources of material (17) having a main axis (18) unused.