Patents by Inventor Catherine Chaton

Catherine Chaton has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device comprising at least one MOS transistor having an etch stop layer, and corresponding fabrication process
    Patent number: 7528030
    Abstract: A semiconductor device includes at least one MOS transistor, each transistor being provided with a source region and a drain region formed in a semiconductor substrate, along with a gate region and spacers. The transistor is covered with a unitary etch stop layer that includes at least a first zone having a first residual stress level (in tension) covering at least one part of the transistor and at least a second zone having a second residual stress level (in compression) covering at least another part of the device. With this configuration, the first residual stress level is higher than the second residual stress level.
    Type: Grant
    Filed: September 8, 2006
    Date of Patent: May 5, 2009
    Assignees: STMicroelectronics (Crolles 2) SAS, Commissariat a l'Energie Atomique
    Inventors: Pierre Morin, Catherine Chaton
  • Semiconductor device comprising at least one MOS transistor having an etch stop layer, and corresponding fabrication process
    Publication number: 20070069256
    Abstract: A semiconductor device includes at least one MOS transistor, each transistor being provided with a source region and a drain region formed in a semiconductor substrate, along with a gate region and spacers. The transistor is covered with a unitary etch stop layer that includes at least a first zone having a first residual stress level (in tension) covering at least one part of the transistor and at least a second zone having a second residual stress level (in compression) covering at least another part of the device. With this configuration, the first residual stress level is higher than the second residual stress level.
    Type: Application
    Filed: September 8, 2006
    Publication date: March 29, 2007
    Applicants: STMicroelectronics (Crolles 2) SAS, Commissariat a L'Energie Atomique
    Inventors: Pierre Morin, Catherine Chaton