Abstract: The present invention provides compounds of Formula I, pharmaceutically acceptable salts thereof, and pharmaceutical compositions thereof. Compounds of the present invention are useful for inhibiting fungal or parasitic growth. The compounds are useful as inhibitors of glycosylphosphatidylinositol (GPI)-anchor biosynthesis, in particular, as inhibitors of fungal Gwt1 activity. The present invention further provides methods of using the compounds described herein for treating fungal or parasitic infections. The compounds can also be used as biological probes to study the effects of inhibiting Gwt1 activity.

Abstract: The present invention provides compounds of Formula I, pharmaceutically acceptable salts thereof, and pharmaceutical compositions thereof. Compounds of the present invention are useful for inhibiting fungal or parasitic growth. The compounds are useful as inhibitors of glycosylphosphatidylinositol (GPI)-anchor biosynthesis, in particular, as inhibitors of fungal Gwt1 activity. The present invention further provides methods of using the compounds described herein for treating fungal or parasitic infections. The compounds can also be used as biological probes to study the effects of inhibiting Gwt1 activity.

Abstract: Embodiment of the present invention provides a method of forming a semiconductor device in a sidewall image transfer process with multiple critical dimensions. The method includes forming a multi-level dielectric layer over a plurality of mandrels, the multi-level dielectric layer having a plurality of regions covering the plurality of mandrels, the plurality of regions of the multi-level dielectric layer having different thicknesses; etching the plurality of regions of the multi-level dielectric layer into spacers by applying a directional etching process, the spacers being formed next to sidewalls of the plurality of mandrels and having different widths corresponding to the different thicknesses of the plurality of regions of the multi-level dielectric layer; removing the plurality of mandrels in-between the spacers; and transferring bottom images of the spacers into one or more layers underneath the spacers.

Abstract: Embodiment of the present invention provides a method of forming a semiconductor device in a sidewall image transfer process with multiple critical dimensions. The method includes forming a multi-level dielectric layer over a plurality of mandrels, the multi-level dielectric layer having a plurality of regions covering the plurality of mandrels, the plurality of regions of the multi-level dielectric layer having different thicknesses; etching the plurality of regions of the multi-level dielectric layer into spacers by applying a directional etching process, the spacers being formed next to sidewalls of the plurality of mandrels and having different widths corresponding to the different thicknesses of the plurality of regions of the multi-level dielectric layer; removing the plurality of mandrels in-between the spacers; and transferring bottom images of the spacers into one or more layers underneath the spacers.