Patents by Inventor Cattien Nguyen

Cattien Nguyen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10734166
    Abstract: A composite structure for an electric energy storage device is envisioned. The structure is made of a metal substrate and a metal oxide layer disposed over a majority of the metal substrate with the metal oxide layer being comprised of a first and second metals. Carbon nanotubes are disposed on the metal oxide layer. In an embodiment the first metal and the second metal are each selected from a group consisting of: iron, nickel, aluminum, cobalt, copper, chromium, and gold.
    Type: Grant
    Filed: March 13, 2014
    Date of Patent: August 4, 2020
    Assignee: ZapGo Ltd
    Inventors: Cattien Nguyen, You Li, Hoang Nguyen Ly, Darrell Niemann, Bevan Vo, Phillip Kraus
  • Publication number: 20190304710
    Abstract: A composite structure for an electric energy storage device is envisioned. The structure is made of a metal substrate and a metal oxide layer disposed over a majority of the metal substrate with the metal oxide layer being comprised of a first and second metals. Carbon nanotubes are disposed on the metal oxide layer. In an embodiment the first metal and the second metal are each selected from a group consisting of: iron, nickel, aluminum, cobalt, copper, chromium, and gold.
    Type: Application
    Filed: March 13, 2014
    Publication date: October 3, 2019
    Inventors: Cattien Nguyen, You Li, Hoang Nguyen Ly, Darrell Niemann, Bevan Vo, Phillip Kraus
  • Publication number: 20180218847
    Abstract: A composite structure for an electric energy storage device is envisioned. The structure is made of a metal substrate and a metal oxide layer disposed over a majority of the metal substrate with the metal oxide layer being comprised of a first and second metals. Carbon nanotubes are disposed on the metal oxide layer. In an embodiment the first metal and the second metal are each selected from a group consisting of: iron, nickel, aluminum, cobalt, copper, chromium, and gold.
    Type: Application
    Filed: March 13, 2014
    Publication date: August 2, 2018
    Inventors: Cattien Nguyen, You Li, Hoang Nguyen Ly, Darrell Niemann, Bevan Vo, Phillip Kraus
  • Patent number: 8505110
    Abstract: An apparatus and method for the controlled fabrication of nanostructures using catalyst retaining structures is disclosed. The apparatus includes one or more modified force microscopes having a nanotube attached to the tip portion of the microscopes. An electric current is passed from the nanotube to a catalyst layer of a substrate, thereby causing a localized chemical reaction to occur in a resist layer adjacent the catalyst layer. The region of the resist layer where the chemical reaction occurred is etched, thereby exposing a catalyst particle or particles in the catalyst layer surrounded by a wall of unetched resist material. Subsequent chemical vapor deposition causes growth of a nanostructure to occur upward through the wall of unetched resist material having controlled characteristics of height and diameter and, for parallel systems, number density.
    Type: Grant
    Filed: October 9, 2008
    Date of Patent: August 6, 2013
    Assignee: Eloret Corporation
    Inventor: Cattien Nguyen
  • Publication number: 20100032313
    Abstract: An apparatus and method for the controlled fabrication of nanostructures using catalyst retaining structures is disclosed. The apparatus includes one or more modified force microscopes having a nanotube attached to the tip portion of the microscopes. An electric current is passed from the nanotube to a catalyst layer of a substrate, thereby causing a localized chemical reaction to occur in a resist layer adjacent the catalyst layer. The region of the resist layer where the chemical reaction occurred is etched, thereby exposing a catalyst particle or particles in the catalyst layer surrounded by a wall of unetched resist material. Subsequent chemical vapor deposition causes growth of a nanostructure to occur upward through the wall of unetched resist material having controlled characteristics of height and diameter and, for parallel systems, number density.
    Type: Application
    Filed: October 9, 2008
    Publication date: February 11, 2010
    Inventor: Cattien Nguyen