Abstract: A semiconductor device includes a first semiconductor die having a top planar surface and a second semiconductor die having a bottom planar surface and a top planar surface. A protective layer including a bottom planar surface and a top planar surface is positioned between the first semiconductor die and the second semiconductor die. An adhesive layer having a top planar surface and a bottom planar surface is between the protective layer and the second semiconductor die. A periphery of the top planar surface of the first semiconductor die is covered by a periphery of the bottom planar surface of the protective layer after cutting a portion of the protective layer that extended past the periphery of the surface of the first semiconductor die. The protective layer reduces the occurrence of peeling of the second semiconductor die and first semiconductor die coupled to the protective layer.

Abstract: The present technology relates to a semiconductor package. The semiconductor package comprises: a first component comprising a plurality of first dies stacked on top of each other, each of first dies comprising at least one side surface and an electrical contact exposed on the side surface, and the plurality of first dies aligned so that the corresponding side surfaces of all first dies substantially coplanar with respect to each other to form a common sidewall; a first conductive pattern formed over the sidewall and at least partially spaced away from the sidewall, the first conductive pattern electrically interconnecting the electrical contacts of the plurality of first dies; at least one second component; and a second conductive pattern formed on a surface of the second component, the second conductive pattern affixed and electrically connected to the first conductive pattern formed over the sidewall of the first component.

Abstract: The present technology relates to a semiconductor device. The semiconductor device comprises: a plurality of dies stacked on top of each other, each of the dies comprising a first major surface, an IO conductive pattern on the first major surface and extended to a minor surface substantially perpendicular to the major surfaces to form at least one IO electrical contact on the minor surface, and the plurality of dies aligned so that the corresponding minor surfaces of all dies substantially coplanar with respect to each other to form a common flat sidewall, and a plurality of IO routing traces formed over the sidewall and at least partially spaced away from the sidewall. The plurality of IO routing traces are spaced apart from each other in a first direction on the sidewall, and each of IO routing traces is electrically connected to a respective IO electrical contact and extended across the sidewall in a second direction substantially perpendicular to the first direction on the sidewall.