Patents by Inventor CC Lin

CC Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7105393
    Abstract: A strained silicon layer fabrication employs a substrate having successively formed thereover: (1) a first silicon-germanium alloy material layer; (2) a first silicon layer; (3) a second silicon-germanium alloy material layer; and (4) a second silicon layer. Within the fabrication each of the first silicon-germanium alloy layer and the second silicon-germanium alloy layer is formed of a thickness less than a threshold thickness for dislocation defect formation, such as to provide attenuated dislocation defect formation within the strained silicon layer fabrication.
    Type: Grant
    Filed: January 30, 2004
    Date of Patent: September 12, 2006
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Liang-Gi Yao, Tien-Chih Chang, CC Lin, Shin-Chang Chen, Mong-Song Liang
  • Publication number: 20050170577
    Abstract: A strained silicon layer fabrication employs a substrate having successively formed thereover: (1) a first silicon-germanium alloy material layer; (2) a first silicon layer; (3) a second silicon-germanium alloy material layer; and (4) a second silicon layer. Within the fabrication each of the first silicon-germanium alloy layer and the second silicon-germanium alloy layer is formed of a thickness less than a threshold thickness for dislocation defect formation, such as to provide attenuated dislocation defect formation within the strained silicon layer fabrication.
    Type: Application
    Filed: January 30, 2004
    Publication date: August 4, 2005
    Inventors: Liang-Gi Yao, Tien-Chih Chang, CC Lin, Shin-Chang Chen, Mong-Song Liang