Abstract: The present invention discloses a furnace tube for plasma enhanced thin film deposition, comprising: a process tube, having a reaction chamber and at least one ionization chamber constructed therein; a gas supply tube, for transporting the process gas to be ionized to the ionization chamber. After the process gas to be ionized is ionized in the ionization chamber, the ionized process gas enters the reaction chamber, so as to deposit a corresponding thin film on the surface of a substrate, or undergo an adsorption reaction to realize layer-by-layer growth of the thin film on the surface of the substrate. A first electrode and a second electrode are located in the process tube and at the middle position of the ionization chamber.

Abstract: A substrate processing apparatus comprises a processing chamber and a gas supply portion configured in an upper portion of the processing chamber, for supplying the processing gas into the processing chamber. A plurality of substrate holding portions are configured in the processing chamber and located below the gas supply portion, for holding substrates. An exhaust portion is configured in a lower portion of the processing chamber, for exhausting gas from the processing chamber. The exhaust portion comprises a plurality of exhaust grooves, a plurality of exhaust flow channels and a shared main exhaust port. Each exhaust groove is configured with a substrate holding portion and two exhaust flow channels, to connect the exhaust groove to the main exhaust port. Wherein, the main exhaust port is located at a geometric center of a plurality of substrate holding portions, and the plurality of exhaust flow channels have the same exhaust volume.

Abstract: A furnace tube for thin film deposition, includes: a process tube; a wafer boat, arranged inside the process tube and provided with multi-layered supporting members along the length direction of the process tube; a gas supply tube, arranged inside the process tube and provided with multi-layered gas supply holes along the length direction of the process tube. Multi-layered exhaust holes are arranged on the sidewall of the process tube along the length direction, wherein the distribution area of the gas supply holes is gradually reduced from top to bottom along the length direction of the sidewall of the process tube, and the distribution area of the exhaust holes is gradually reduced from top to bottom along the length direction of the sidewall of the process tube.

Abstract: A high-temperature tube furnace comprises: a process tube (1) with a top cover (101) arranged on the top end thereof, the top cover (101) being provided with through holes (1011); a gas supply pipe (2) communicating with the through holes (1011) of the top cover (101) of the process tube (1), process gas being introduced into the process tube (1) through the gas supply pipe (2) and the through holes (1011) of the top cover (101) of the process tube (1); a wafer boat (3) arranged in the process tube (1), and comprising a supporting frame (301) and supporting plates (302), the supporting plates (302) being distributed in multiple layers along the length direction of the supporting frame (301) and used for supporting multiple substrates (w), each substrate (w) being placed on one supporting plate and each supporting plate supporting the entire bottom of the substrate (w).