Abstract: A method for forming a stair-step structure in a stack on a substrate is provided. The method comprises at least one stair step cycle. Each stair step cycle comprises trimming the mask and etching the stack. Etching the stack is provided in a plurality of cycles wherein each cycle comprises etching a SiO2 layer and etching a SiN layer. Etching a SiO2 layer comprises flowing a SiO2 etching gas into the plasma processing chamber, wherein the SiO2 etching gas comprises a hydrofluorocarbon, an inert bombardment gas, and at least one of SF6 and NF3, generating a plasma from the SiO2 etching gas, providing a bias, and stopping the SiO2 layer etch. The etching a SiN layer comprises flowing a SiN etching gas into the plasma processing chamber, comprising a hydrofluorocarbon and oxygen, generating a plasma from the SiN etching gas, providing a bias, and stopping the SiN layer etch.

Abstract: Provided herein are methods and related apparatus for mask reconstruction in an etch process. The methods involve depositing a sacrificial layer on the mask layer. The sacrificial layer may be used to protect position on the mask layer. Following mask reshaping, the sacrificial layer may be removed using the same etch process that is used to etch the target material.

Abstract: A method for forming a stair-step structure in a stack on a substrate is provided. The method comprises at least one stair step cycle. Each stair step cycle comprises trimming the mask and etching the stack. Etching the stack is provided in a plurality of cycles wherein each cycle comprises etching a SiO2 layer and etching a SiN layer. Etching a SiO2 layer comprises flowing a SiO2 etching gas into the plasma processing chamber, wherein the SiO2 etching gas comprises a hydrofluorocarbon, an inert bombardment gas, and at least one of SF6 and NF3, generating a plasma from the SiO2 etching gas, providing a bias, and stopping the SiO2 layer etch. The etching a SiN layer comprises flowing a SiN etching gas into the plasma processing chamber, comprising a hydrofluorocarbon and oxygen, generating a plasma from the SiN etching gas, providing a bias, and stopping the SiN layer etch.

Abstract: A method for opening an amorphous carbon layer mask below a hardmask is provided. The opening an amorphous carbon layer mask comprises performing one or more cycles, where each cycle comprises an amorphous carbon layer mask opening phase and a cleaning phase. The amorphous carbon layer mask opening phase comprises flowing an opening gas into a plasma processing chamber, wherein the opening gas comprises an oxygen containing component, creating a plasma from the opening gas, which etches features in the amorphous carbon layer mask, and stopping the flow of the opening gas. The cleaning phase comprises flowing a cleaning gas into the plasma processing chamber, wherein the cleaning gas comprises a hydrogen containing component, a carbon containing component, and a halogen containing component, creating a plasma from the cleaning gas; and stopping the flow of the cleaning gas into the plasma processing chamber.

Abstract: A method for opening an amorphous carbon layer mask below a hardmask is provided. The opening an amorphous carbon layer mask comprises performing one or more cycles, where each cycle comprises an amorphous carbon layer mask opening phase and a cleaning phase. The amorphous carbon layer mask opening phase comprises flowing an opening gas into a plasma processing chamber, wherein the opening gas comprises an oxygen containing component, creating a plasma from the opening gas, which etches features in the amorphous carbon layer mask, and stopping the flow of the opening gas. The cleaning phase comprises flowing a cleaning gas into the plasma processing chamber, wherein the cleaning gas comprises a hydrogen containing component, a carbon containing component, and a halogen containing component, creating a plasma from the cleaning gas; and stopping the flow of the cleaning gas into the plasma processing chamber.

Abstract: A method for forming a stair-step structure in a substrate is provided, wherein the substrate has an organic mask, comprising at least one cycle, wherein each cycle comprises a) depositing a hardmask over the organic mask, b) trimming the organic mask, c) etching the substrate, d) trimming the organic mask, wherein there is no depositing a hardmask between etching the substrate and trimming the organic mask, e) etching the substrate, and f) repeating steps a-e a plurality of times forming the stair-step structure.

Abstract: A method for forming a stair-step structure in a substrate is provided, wherein the substrate has an organic mask, comprising at least one cycle, wherein each cycle comprises a) depositing a hardmask over the organic mask, b) trimming the organic mask, c) etching the substrate, d) trimming the organic mask, wherein there is no depositing a hardmask between etching the substrate and trimming the organic mask, e) etching the substrate, and f) repeating steps a-e a plurality of times forming the stair-step structure.

Abstract: A method for forming a stair-step structure in a substrate is provided. An organic mask is formed over the substrate. A hardmask with a top layer and sidewall layer is formed over the organic mask. The sidewall layer of the hard mask is removed while leaving the top layer of the hardmask. The organic mask is trimmed. The hardmask is removed. The substrate is etched. The forming the hardmask, removing the sidewall layer, trimming the organic mask, and etching the substrate are repeated a plurality of times.

Abstract: A method for forming a stair-step structure in a substrate is provided. An organic mask is formed over the substrate. A hardmask with a top layer and sidewall layer is formed over the organic mask. The sidewall layer of the hard mask is removed while leaving the top layer of the hardmask. The organic mask is trimmed. The hardmask is removed. The substrate is etched. The forming the hardmask, removing the sidewall layer, trimming the organic mask, and etching the substrate are repeated a plurality of times.

Abstract: A multi-workpiece chamber includes at least two processing stations, for exposing workpieces to a treatment process. A partition cooperates with the chamber such that the partition is disengagably removable from the chamber and re-engagable with the chamber for selectively dividing the processing stations. The partition is configured to provide for non-line-of-sight travel of certain ones of the process related products between the processing stations. An exhaust arrangement divides exhaust flow into at least two approximately equal exhaust flow portions that leave the multi-workpiece chamber in a way which enhances uniformity of the treatment process for the stations. A partition configuration is described including a partition portion between the stations and a baffle portion extending into an exhaust arrangement. A modified partition arrangement is provided for use in establishing a modified exchange characteristic of the process related products.

Abstract: A multi-station workpiece processing system provides a targeted equal share of a regulated input process gas flow to each active processing station of a plurality of active processing stations using a single gas flow regulator for each gas and irrespective of the number of inactive processing stations.

Abstract: A dry etching method and apparatus are described. A workpiece supports silicon nitride and silicon dioxide. The workpiece is exposed to a plasma containing at least one of sulfur hexafluoride and nitrogen trifluoride and ammonia to selectively remove the silicon nitride in relation to the silicon dioxide. In one feature, the plasma contains sulfur hexafluoride and ammonia. In another feature, the plasma contains nitrogen trifluoride and ammonia.

Abstract: A multi-workpiece chamber includes at least two processing stations, for exposing workpieces to a treatment process. A partition cooperates with the chamber such that the partition is disengagably removable from the chamber and re-engagable with the chamber for selectively dividing the processing stations. The partition is configured to provide for non-line-of-sight travel of certain ones of the process related products between the processing stations. An exhaust arrangement divides exhaust flow into at least two approximately equal exhaust flow portions that leave the multi-workpiece chamber in a way which enhances uniformity of the treatment process for the stations. A partition configuration is described including a partition portion between the stations and a baffle portion extending into an exhaust arrangement. A modified partition arrangement is provided for use in establishing a modified exchange characteristic of the process related products.

Abstract: A multi-workpiece chamber includes at least two processing stations, for exposing workpieces to a treatment process. A partition cooperates with the chamber such that the partition is disengagably removable from the chamber and re-engagable with the chamber for selectively dividing the processing stations. The partition is configured to provide for non-line-of-sight travel of certain ones of the process related products between the processing stations . An exhaust arrangement divides exhaust flow into at least two approximately equal exhaust flow portions that leave the multi-workpiece chamber in a way which enhances uniformity of the treatment process for the stations. A partition configuration is described including a partition portion between the stations and a baffle portion extending into an exhaust arrangement. A modified partition arrangement is provided for use in establishing a modified exchange characteristic of the process related products.

Abstract: A method for forming a stair-step structure in a substrate is provided. An organic mask is formed over the substrate. A hardmask with a top layer and sidewall layer is formed over the organic mask. The sidewall layer of the hard mask is removed while leaving the top layer of the hardmask. The organic mask is trimmed. The hardmask is removed. The substrate is etched. The forming the hardmask, removing the sidewall layer, trimming the organic mask, and etching the substrate are repeated a plurality of times.