Patents by Inventor Cecil B. Shepard, Jr.

Cecil B. Shepard, Jr. has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6499426
    Abstract: A system and method for depositing a CVD diamond coating on a non-planar surface of an object is provided. The system includes a deflector having a deflecting surface which resists diamond coating by the diamond forming reagents produced by the system and which is adapted to withstand the relatively high deposition temperatures is provided. The deflector is positioned substantially axially with an axis of the distribution head of the CVD engine. The deflector is preferably generally wedge-shaped or conical and coupled to a motor which is adapted to rotate the deflector at a relatively high speed. A mandrel may be positioned about or to one side of the deflector. The deflector is oriented with respect to the distribution head and the mandrel such that a jet exiting the distribution head is deflected by the deflector onto a surface of an object positioned on the mandrel. The object surface may be non-planar.
    Type: Grant
    Filed: December 10, 1999
    Date of Patent: December 31, 2002
    Assignee: Saint-Gobain Industrial Ceramics, Inc.
    Inventors: Henry Windischmann, Cecil B. Shepard, Jr., Donald O. Patten, Jr.
  • Patent number: 6406760
    Abstract: A method is disclosed for depositing diamond film on a plurality of substrates, which comprises the steps of: providing a plasma beam containing atomic hydrogen and a carbonaceous component; providing a plurality of substrates, each of the substrates having a deposited surface, the substrates being arranged such that the beam impinges successively on a deposition surface of a first substrate and then on a deposition surface of a second substrate, the deposition surfaces of the first and second substrates being oriented with respect to each other at a non-zero angle.
    Type: Grant
    Filed: July 18, 2000
    Date of Patent: June 18, 2002
    Assignee: Celestech, Inc.
    Inventor: Cecil B. Shepard, Jr.
  • Patent number: 6173672
    Abstract: Apparatus is disclosed for depositing diamond film on a plurality of substrates, and includes: a plasma beam containing atomic hydrogen and a carbonaceous component, and a plurality of substrates, each of the substrates having a deposition surface, the substrates being arranged such that the beam impinges successively on a deposition surface of a first of the substrates and then on a deposition surface of a second of the substrates, the deposition surfaces of the first and second substrates being oriented with respect to each other at a non-zero angle.
    Type: Grant
    Filed: June 6, 1997
    Date of Patent: January 16, 2001
    Assignee: Celestech, Inc.
    Inventor: Cecil B. Shepard, Jr.
  • Patent number: 5683759
    Abstract: A method for depositing a substance, such as diamond, by plasma deposition on a substrate mounted over a madrel cooled by a heat exchange, comprising the steps of: determining the heat flux at the deposition surface of the substrate; providing, between said mandrel and said substrate, a spacer having a thermal conductance in its thickness direction that varies in accordance with said determined heat flux; and depositing said substance on said substrate by said plasma deposition.
    Type: Grant
    Filed: July 1, 1996
    Date of Patent: November 4, 1997
    Assignee: Celestech, Inc.
    Inventors: Cecil B. Shepard, Jr., Michael S. Heuser, Daniel V. Raney, William A. Quirk, Gregory Bak-Boychuk
  • Patent number: 5551983
    Abstract: An apparatus for depositing a substance with temperature control includes, in one embodiment: a mandrel rotatable on an axis; a spacer mounted on the mandrel; a substance mounted on the spacer; a plasma, containing constituents of the substance being deposited, directed toward the substrate; the spacer having a thermal conductance in its thickness direction that varies with radial dimension.
    Type: Grant
    Filed: November 1, 1994
    Date of Patent: September 3, 1996
    Assignee: Celestech, Inc.
    Inventors: Cecil B. Shepard, Jr., Michael S. Heuser, Daniel V. Raney, William A. Quirk, Gregory Bak-Boychuk
  • Patent number: 5487787
    Abstract: The substrate in a plasma jet deposition system is provided with structural attributes, such as apertures and/or grooves, that facilitate efficient deposition. Groups of substrates are arranged with respect to the plasma beam in a manner which also facilitates efficient deposition. In addition to increasing the portion of the plasma beam volume which contacts the substrate surface or surfaces, it is advantageous to provide for the efficient evacuation of spent fluids away from the substrate so that fresh plasma containing the operative species can easily and continuously contact the substrate surface.
    Type: Grant
    Filed: January 6, 1995
    Date of Patent: January 30, 1996
    Assignee: Celestech, Inc.
    Inventors: Gordon L. Cann, Cecil B. Shepard, Jr., Frank X. McKevitt
  • Patent number: 5435849
    Abstract: The substrate in a plasma jet deposition system is provided with structural attributes, such as apertures and/or grooves, that facilitate efficient deposition. Groups of substrates are arranged with respect to the plasma beam in a manner which also facilitates efficient deposition. In addition to increasing the portion of the plasma beam volume which contacts the substrate surface or surfaces, it is advantageous to provide for the efficient evacuation of spent fluids away from the substrate so that fresh plasma containing the operative species can easily and continuously contact the substrate surface.
    Type: Grant
    Filed: January 13, 1993
    Date of Patent: July 25, 1995
    Assignee: Celestech, Inc.
    Inventors: Gordon L. Cann, Cecil B. Shepard, Jr., Frank X. McKevitt
  • Patent number: 5342660
    Abstract: The disclosure is directed to a method for depositing a substance, such as synthetic diamond. A plasma beam is produced, and contains the constituents of the substance to be deposited. A substrate is provided, and has a surface in the path of the beam, the area of said surface being substantially larger than the cross-sectional area of the beam impinging on the surface. Repetitive motion is introduced between the substrate and the beam as the substance is deposited on the surface. The substrate, the beam, or both can be moved. Spinning of the substrate, with the beam non-concentric thereon, is one of the disclosed techniques.
    Type: Grant
    Filed: May 10, 1991
    Date of Patent: August 30, 1994
    Assignee: Celestech, Inc.
    Inventors: Gordon L. Cann, Cecil B. Shepard, Jr.