Abstract: A method and apparatus is disclosed for providing highly linear resistance with high sheet values, and for implementing resistors in a conventional CMOS process when either drain or source must operate near the rail of a circuit. Accordingly, a five terminal distributed MOS resistor device includes a drain terminal, a source terminal, and a channel region disposed between the drain terminal and the source terminal. A bulk terminal is adjacent the channel region. A first gate terminal is adjacent the source terminal and a second gate terminal is adjacent the drain terminal. Lastly, a gate region of resistive material is disposed between the first gate terminal and the second gate terminal, wherein upon application of a voltage to the first gate terminal and the second gate terminal, a voltage drop across the gate region is equally distributed along a length of an electrical channel in the channel region.

Abstract: A method and apparatus is disclosed for providing highly linear resistance with high sheet values, and for implementing resistors in a conventional CMOS process when either drain or source must operate near the rail of a circuit. Accordingly, a five terminal distributed MOS resistor device includes a drain terminal, a source terminal, and a channel region disposed between the drain terminal and the source terminal. A bulk terminal is adjacent the channel region. A first gate terminal is adjacent the source terminal and a second gate terminal is adjacent the drain terminal. Lastly, a gate region of resistive material is disposed between the first gate terminal and the second gate terminal, wherein upon application of a voltage to the first gate terminal and the second gate terminal, a voltage drop across the gate region is equally distributed along a length of an electrical channel in the channel region.