Abstract: Gluing process for micro-structured substrates. The invention is applicable particularly to the fabrication of micro-fluidic components. In order to glue a micro-structured substrate (2) having upper coplanar plane areas (6) and recesses between them, a grid (10) is placed above the substrate, the grid is coated with a glue (12), using a tool (16) that presses on the grid and locally brings it into contact with the areas, so as to deposit a film (20) of glue droplets on them, and the grid is removed. Furthermore, the upper coplanar plane areas (6) are treated before the film of glue droplets is deposited, this treatment being designed to adapt wettability of these areas to the glue.

Abstract: A process and a device for the passive alignment of supports, particularly plates which carry optical components. According to the invention, in order to align supports (2, 8), holes (6, 7, 11, 12) are formed in these supports, in correspondence with each other, balls (14, 16) are placed on the holes of one of the supports and these are assembled by placing the holes of the other support onto the balls. The sizes of the holes or of the balls are chosen so as to obtain a pre-set non-zero angle (?) between the assembled supports.

Abstract: A process and a device for the passive alignment of supports, particularly plates which carry optical components.

Abstract: The invention relates to a process for producing an electric contact on a HgCdTe substrate having a P conductivity and application to the production of an N/P diode. For producing an N/P diode, an insulating layer deposited on the HgCdTe substrate is etched by ion bombardment through a first mask, so as to produce a first opening in said insulating layer. The mask is removed and the substrate covered by the insulating layer undergoes a heat treatment, so as to at least mitigate the P conductivity drop induced by the ion bombardment in a first portion of the substrate facing the first opening. This is followed by ion implantation in a second portion of the substrate through a second mask in order to produce an N conductivity portion. This second mask is removed and the insulating layer is etched through a third mask by ion bombardment in order to produce a second opening facing the second portion. After removing the third mask, conductive pads are produced in the first and second openings.