Abstract: A switch based on a phase change material including: a region in said phase change material that couples the first and second conductive electrodes of the switch; and a waveguide including a first end in line with a face of the region in said phase change material and a second end, opposed to the first end, designed to be illuminated by a laser source.

Abstract: An optoelectronic device, including: a laser source, including a semiconductor membrane, which rests on a first dielectric layer, and which is formed from a lateral segment doped n-type, a lateral segment doped p-type, and an optically active central segment located between and in contact with the doped lateral segments to form a lateral p-i-n junction lying parallel to the main plane. The semiconductor membrane is produced based on crystalline GaAs, the central segment includes GaAs-based quantum dots, and the doped lateral segments are produced based on AlxGa1-xAs with a proportion of aluminium x comprised between 0.05 and 0.30.

Abstract: A method for making an imager device including the implementation of the steps of: making, through a layer of electric insulating material within which are made one or more pixels each including an antenna able to pick up an electromagnetic wave received at said pixel, of an aperture forming an access to a layer of sacrificial material provided between the layer of electric insulating material and a reflective layer able to reflect said electromagnetic wave; removing part of the layer of sacrificial material through the aperture, forming between the reflective layer and the layer of electric insulating material at least one optical cavity.

Abstract: A method for making an imager device including the implementation of the steps of: making, through a layer of electric insulating material within which are made one or more pixels each including an antenna able to pick up an electromagnetic wave received at said pixel, of an aperture forming an access to a layer of sacrificial material provided between the layer of electric insulating material and a reflective layer able to reflect said electromagnetic wave; removing part of the layer of sacrificial material through the aperture, forming between the reflective layer and the layer of electric insulating material at least one optical cavity.

Abstract: A semiconductor structure includes a support and at least one block provided on the support. The block includes a stack including alternating layers based on a first semiconductor material and layers based on a second semiconductor material different from the first material, the layers presenting greater dimensions than layers such that the stack has a lateral tooth profile and a plurality of spacers filling the spaces formed by the tooth profile, the spacers being made of a third material different from the first material such that each of the lateral faces of the block presents alternating lateral bands based on the first material and alternating lateral bands based on the third material. At least one of the lateral faces of the block is partially coated with a material promoting the growth of nanotubes or nanowires, the catalyst material exclusively coating the lateral bands based on the first material or exclusively coating the lateral bands based on the third material.

Abstract: Double gate transistor microelectronic device comprising: a support, a structure suited to forming at least one multi-branch channel and comprising a plurality of separate parallel semi-conductor rods and situated in a plane orthogonal to the principal plane of the support, the rods linking a first block suited to forming a source region of the transistor and a second block provided, suited to forming a drain region of the transistor, a first gate electrode situated on one side of said structure against the sides of said semi-conductor rods, a second gate electrode, separate from the first gate and situated on another side of the structure against the opposite sides of the rods, the semi-conductor rods and one or several insulating rods situated between the semi-conductor rods, separating the first gate electrode and the second gate electrode.

Abstract: A method for making a microelectronic device comprising at least one electromechanical component provided with a mobile structure, the method comprising the steps of: forming in at least one fine semiconducting thin layer lying on a supporting layer, at least one bar bound to a block, said bar being intended to form a mobile structure of an electromechanical component, withdrawing a portion of the supporting layer under said bar, forming at least one passivation layer based on dielectric material around said bar, forming an encapsulation layer around the bar and covering said passivation layer, the method further comprising steps of: making metal contact and/or interconnection areas, and then suppressing the encapsulation layer around said bar.

Abstract: A method for making a microelectronic device comprising at least one electromechanical component provided with a mobile structure, the method comprising the steps of: forming in at least one fine semiconducting thin layer lying on a supporting layer, at least one bar bound to a block, said bar being intended to form a mobile structure of an electromechanical component, withdrawing a portion of the supporting layer under said bar, forming at least one passivation layer based on dielectric material around said bar, forming an encapsulation layer around the bar and covering said passivation layer, the method further comprising steps of: making metal contact and/or interconnection areas, and then suppressing the encapsulation layer around said bar.

Abstract: A semiconductor structure includes a support and at least one block provided on the support. The block includes a stack including alternating layers based on a first semiconductor material and layers based on a second semiconductor material different from the first material, the layers presenting greater dimensions than layers such that the stack has a lateral tooth profile and a plurality of spacers filling the spaces formed by the tooth profile, the spacers being made of a third material different from the first material such that each of the lateral faces of the block presents alternating lateral bands based on the first material and alternating lateral bands based on the third material. At least one of the lateral faces of the block is partially coated with a material promoting the growth of nanotubes or nanowires, the catalyst material exclusively coating the lateral bands based on the first material or exclusively coating the lateral bands based on the third material.

Abstract: Double gate transistor microelectronic device comprising: a support, a structure suited to forming at least one multi-branch channel and comprising a plurality of separate parallel semi-conductor rods and situated in a plane orthogonal to the principal plane of the support, the rods linking a first block suited to forming a source region of the transistor and a second block provided, suited to forming a drain region of the transistor, a first gate electrode situated on one side of said structure against the sides of said semi-conductor rods, a second gate electrode, separate from the first gate and situated on another side of the structure against the opposite sides of the rods, the semi-conductor rods and one or several insulating rods situated between the semi-conductor rods, separating the first gate electrode and the second gate electrode.