Abstract: The present disclosure pertains to a system configured to prepare and use prediction models for socioeconomic data and missing value prediction. Some embodiments may: extract, from received population segment data, a training set of socioeconomic parameter values for each population segment; provide, to a prediction model as input, first parameter values of the respective training set for the prediction of additional parameter values of the training set such that the prediction of the additional parameter values is performed without reliance on the additional parameter values; provide, for each of the training sets, the additional parameter values to the prediction model as reference feedback for the prediction model's prediction of the additional parameter values to train the prediction model; and predict, based on a working set of parameter values for a population segment, additional values for the working set using the prediction model subsequent to its training.

Abstract: Methods and systems for generating a model to be used for evaluating credit and loan applications are provided. The method includes: training a first model by using all features included in a universe of candidate features; measuring a first metric that relates to an accuracy of the first model and a second metric that relates to a disparity of the first model; constructing a graph based on pairwise correlations of the features; clustering the features into feature sets; estimating a respective disparity contribution associated with each feature set; selecting feature sets to be included in a second model; training, the second model; measuring the first metric and the second metric with respect to the second model; and determining whether the second model satisfies a predetermined accuracy level and a predetermined disparity reduction with respect to the first model.

Abstract: The disclosure provides, e.g., compositions, systems, and methods for targeting, editing, modifying, or manipulating a host cell's genome at one or more locations in a DNA sequence in a cell, tissue, or subject. Gene modifying systems for treating cystic fibrosis, e.g., in subjects having a mutation resulting in F508del, are described.

Abstract: The disclosure provides, e.g., compositions, systems, and methods for targeting, editing, modifying, or manipulating a host cell's genome at one or more locations in a DNA sequence in a cell, tissue, or subject. Gene modifying systems for treating alpha-1 antitrypsin deficiency (AATD) are described.

Abstract: The disclosure provides, e.g., compositions, systems, and methods for targeting, editing, modifying, or manipulating a host cell's genome at one or more locations in a DNA sequence in a cell, tissue, or subject. Gene modifying systems for treating phenylketonuria (PKU) are described.

Abstract: The technologies described herein are generally directed to configuring carrier aggregation zones based on transmission information in a fifth generation (5G) network or other next generation networks. For example, a method described herein can include identifying, by carrier aggregation equipment including a processor, carrier transmission information corresponding to a first carrier signal and a second carrier signal. The method can further include analyzing, by the carrier aggregation equipment, the carrier transmission information to determine first overlap zone information representative of a first carrier overlap zone for the first carrier signal and the second carrier signal. Further, based on the first overlap zone information, the method includes facilitating configuring transmission parameter information representative of a transmission parameter applicable to transmission of the first carrier signal, to enable carrier aggregation by network equipment within the first carrier overlap zone.

Abstract: The present invention provides a high-temperature ionic state fluidized bed compound crystallization technology and an internal reactor structure thereof. The principle of the present invention is that reaction gas is effected by a group of high-frequency external magnetic fields and forms the high-temperature gaseous ion in the first quartz vacuum tube, then forms ion deposition diffusion in the second quartz vacuum tube preheated at constant temperature. As a result, other high-temperature gaseous ions except the silicon hydride are decomposed, rapidly deposited and crystallized in the ion diffusion chamber. And the un-decomposed silicon hydride gas is directly poured into the surface of the silicon heating body of the compound fluidized bed by the static negative high-voltage quartz spray hole to decompose and crystallize, or crystallize by a way of fluid state in the arched heating quartz tube communicating with the top of two quartz reaction furnaces.

Abstract: The present invention provides a high-temperature ionic state fluidized bed compound crystallization technology and an internal reactor structure thereof. The principle of the present invention is that reaction gas is effected by a group of high-frequency external magnetic fields and forms the high-temperature gaseous ion in the first quartz vacuum tube, then forms ion deposition diffusion in the second quartz vacuum tube preheated at constant temperature. As a result, other high-temperature gaseous ions except the silicon hydride are decomposed, rapidly deposited and crystallized in the ion diffusion chamber. And the un-decomposed silicon hydride gas is directly poured into the surface of the silicon heating body of the compound fluidized bed by the static negative high-voltage quartz spray hole to decompose and crystallize, or crystallize by a way of fluid state in the arched heating quartz tube communicating with the top of two quartz reaction furnaces.

Abstract: A method of preparing a diaphragm of high purity polysilicon continuously, includes: impacting high purity silane gas molecules with a high temperature Argon ion beam source in a microwave resonator, so as to make an energy of the high purity silane gas molecules close to a particle binding energy of formation and form grains on a surface of the substrate when the high purity silane gas molecules reach a substrate of the microwave resonator, wherein the particle binding energy is more than 50 kev, the grains have diameters of about 50 nm.