Patents by Inventor Cedric Bucher

Cedric Bucher has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20090127673
    Abstract: A semi-conducting device has at least one layer doped with a doping agent and a layer of another type deposited on the doped layer in a single reaction chamber. An operation for avoiding the contamination of the other layer by the doping agent separates the steps of depositing each of the layers.
    Type: Application
    Filed: January 28, 2009
    Publication date: May 21, 2009
    Applicant: OERLIKON TRADING AG, TRUEBBACH
    Inventors: Ulrich Kroll, Cedric Bucher, Jacques Schmitt, Markus Poppeller, Christoph Hollenstein, Juliette Ballutaud, Alan Howling
  • Patent number: 7504279
    Abstract: A semi-conducting device has at least one layer doped with a doping agent and a layer of another type deposited on the doped layer in a single reaction chamber. An operation for avoiding the contamination of the other layer by the doping agent separates the steps of depositing each of the layers.
    Type: Grant
    Filed: November 29, 2007
    Date of Patent: March 17, 2009
    Assignee: Oerlikon Trading AG, Trubbach
    Inventors: Ulrich Kroll, Cedric Bucher, Jacques Schmitt, Markus Poppeller, Christoph Hollenstein, Juliette Ballutaud, Alan Howling
  • Publication number: 20080076237
    Abstract: A semi-conducting device has at least one layer doped with a doping agent and a layer of another type deposited on the doped layer in a single reaction chamber. An operation for avoiding the contamination of the other layer by the doping agent separates the steps of depositing each of the layers.
    Type: Application
    Filed: November 29, 2007
    Publication date: March 27, 2008
    Applicant: OC Oerlikon Balzers AG
    Inventors: Ulrich Kroll, Cedric Bucher, Jacques Schmitt, Markus Poppeller, Christoph Hollenstein, Juliette Ballutaud, Alan Howling
  • Patent number: 7344909
    Abstract: A semi-conducting device has at least one layer doped with a doping agent and a layer of another type deposited on the doped layer in a single reaction chamber. An operation for avoiding the contamination of the other layer by the doping agent separates the steps of depositing each of the layers.
    Type: Grant
    Filed: October 22, 2003
    Date of Patent: March 18, 2008
    Assignee: OC Oerlikon Balzers AG
    Inventors: Ulrich Kroll, Cédric Bucher, Jacques Schmitt, Markus Poppeller, Christoph Hollenstein, Juliette Ballutaud, Alan Howling
  • Publication number: 20040135221
    Abstract: A semi-conducting device has at least one layer doped with a doping agent and a layer of another type deposited on the doped layer in a single reaction chamber. An operation for avoiding the contamination of the other layer by the doping agent separates the steps of depositing each of the layers.
    Type: Application
    Filed: October 22, 2003
    Publication date: July 15, 2004
    Inventors: Ulrich Kroll, Cedric Bucher, Jacques Schmitt, Markus Poppeller, Christoph Hollenstein, Juliette Ballutaud, Alan Howling